• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.384.2-384.2
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• 2014

We investigated the electrical and structural properties of chemical vapor deposition (CVD)-grown graphene and post treated by O2 plasma. For the patterning of graphene, the plasma technology is generally used and essential for etching of graphene. But, the cautious O2 plasma treatments are required to avoid the damage in graphene edge which can be the harmful effects on the device performance. To analyze the effects of plasma treatment on structural properties of graphene, the change of surface morphology of graphene are measured by scanning electron microscope and atomic force microscope before and after plasma treatment. In addition, the binding energy of carbon and oxygen are measured through to X-ray photoelectron spectroscopy. After plasma treatment, the severe changes of surface morphology and binding energy of carbon and oxygen were observed which effects on the change of sheet resistance. Finally, to analyze of graphene characteristics, we measured the Raman spectroscopy. The measured results showed that the plasma treatment makes the upward of D-peak and downward of G'-peak by elevated power of plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• Carbon letters
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• v.24
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• pp.1-9
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• 2017

We studied the basic properties and fabrication of reduced graphene oxide (rGO) prepared using eco-friendly reduction agents in the graphene solution process. Hydrazine is generally used to reduce graphene oxide (GO), which results in polluting emissions as well as fixed nitrogen functional groups on different defects in the graphene sheets. To replace hydrazine, we developed eco-friendly reduction agents with similar or better reducing properties, and selected of them for further analysis. In this study, GO layers were produced from graphite flakes using a modified Hummer's method, and rGO layers were reduced using hydrazine hydrate, L-ascorbic acid, and gluconic acid. We measured the particle sizes and the dispersion stabilities in the rGO dispersed solvents for the three agents and analyzed the structural, electrical, and optical properties of the rGO films. The results showed that the degree of reduction was in the order L-ascorbic acid ${\geq}$ hydrazine > glucose. GO reduced using L-ascorbic acid had a sheet resistance of $121k{\Omega}/sq$, while that reduced using gluconic acid showed worse electrical properties than the other two reduction agents. Therefore, L-ascorbic acid is the most suitable eco-friendly reduction agent that can be substituted for hydrazine.

• Advances in nano research
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• v.9 no.4
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• pp.221-235
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• 2020

The following composition establishes a nonlocal strain gradient plate model that is essentially related to mass sensors laying on Winkler-Pasternak medium for the vibrational analysis from graphene sheets. To achieve a seemingly accurate study of graphene sheets, the posited theorem actually accommodates two parameters of scale in relation to the gradient of the strain as well as non-local results. Model graphene sheets are known to have double variant shear deformation plate theory without factors from shear correction. By using the principle of Hamilton, to acquire the governing equations of a non-local strain gradient graphene layer on an elastic substrate, Galerkin's method is therefore used to explicate the equations that govern various partition conditions. The influence of diverse factors like the magnetic field as well as the elastic foundation on graphene sheet's vibration characteristics, the number of nanoparticles, nonlocal parameter, nanoparticle mass as well as the length scale parameter had been evaluated.

• Journal of the Korean institute of surface engineering
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• v.53 no.5
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• pp.213-218
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• 2020

Composite material of the graphene ball (GB) inserted graphene oxide (GO) sheet for a supercapacitor electrode was studied. Chemical vapor deposition (CVD) process used to make GBs on the silicon oxide nanoparticles. The GBs mixed into the GO sheets to make GOGB and reduced it to create a reduced GOGB(RGOGB) composite. The RGOGB composite electrode had a large surface area and improved electrochemical properties. Specific capacitance of the RGBGO composite electrode was higher over 20 times than a pure GO and GOGB electrode in cyclic voltammetry(CV) tests, and the Z' and Z" impedance measured by an electrochemical impedance spectrometry(EIS) also low. So, the RGBGO composite electrode would use effectively to expand a performance of supercapacitor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.21-26
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• 2021

Single-layer graphene is grown directly on Ti-buffered SiO2 at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.

• Korean Journal of Materials Research
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• v.30 no.3
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• pp.142-148
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• 2020

Graphene has attracted the interest of many researchers due to various its advantages such as high mobility, high transparency, and strong mechanical strength. However, large-area graphene is grown at high temperatures of about 1,000 ℃ and must be transferred to various substrates for various applications. As a result, transferred graphene shows many defects such as wrinkles/ripples and cracks that happen during the transfer process. In this study, we address transfer-free, large-scale, and high-quality monolayer graphene. Monolayer graphene was grown at low temperatures on Ti (10nm)-buffered Si (001) and PET substrates via plasma-assisted thermal chemical vapor deposition (PATCVD). The graphene area is small at low mTorr range of operating pressure, while 4 × 4 ㎠ scale graphene is grown at high working pressures from 1.5 to 1.8 Torr. Four-inch wafer scale graphene growth is achieved at growth conditions of 1.8 Torr working pressure and 150 ℃ growth temperature. The monolayer graphene that is grown directly on the Ti-buffer layer reveals a transparency of 97.4 % at a wavelength of 550 nm, a carrier mobility of about 7,000 ㎠/V×s, and a sheet resistance of 98 W/□. Transfer-free, large-scale, high-quality monolayer graphene can be applied to flexible and stretchable electronic devices.

• Polymer(Korea)
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• v.38 no.1
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• pp.38-42
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• 2014

The poly[(9,9-bis((6'-(N,N,N-trimethylammonium)hexyl)-2,7-fluorene)-alt-(9,9-bis(2-(2-(2-methoxyethoxy)ethoxy)ethyl)-9-fluorene)) dibromide (WPF-6-oxy-F)] and graphene oxide (GO) was blended and irradiated with gamma ray under ambient condition. This WPF-6-oxy-F-GO composite was investigated as a hole-transporting layer (HTL) in organic solar cells (OSCs). Compared with the pristine GO, the sheet resistance ($R_{sheet}$) of irradiated WPF-6-oxy-F-GO was decreased about 2 orders of magnitude. The reason for the decrease of $R_{sheet}$ is the effect of efficient ${\pi}-{\pi}$ packing resulted from the formation of C-N bond between WPF6-oxy-F and GO. As a result, the efficiency of OSCs was dramatically enhanced ~ 6.10% by introducing irradiated WPF-6-oxy-F-GO as a HTL. WPF-6-oxy-F-GO is a sufficient candidate for HTL to facilitate the low-cost and high efficiency OSCs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.288-293
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• 2017

Transient simulation capability with an implicit time derivation method is a missing feature in deterministic Boltzmann equation solvers. The H-transformation, which is critical for the stable simulation of nanoscale devices, introduces difficulties for the transient simulation. In this work, the transient simulation of graphene sheets is reported. It is shown that simulation of homogeneous systems can be done without abandoning the H-transformation, as much as a specially designed discretization method is employed. The AC mobility and step response of the graphene sheet on the $SiO_2$ substrate are simulated.

• Coupled systems mechanics
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• v.4 no.2
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• pp.137-155
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• 2015

This paper presents a simple procedure to obtain a substitute, homogenized mechanical response of single layer graphene sheet. The procedure is based on the judicious combination of molecular mechanics simulation results and homogenization method. Moreover, a series of virtual experiments are performed on the representative graphene lattice. Following these results, the constitutive model development is based on the well-established continuum mechanics framework, that is, the non-linear membrane theory which includes the hyperelastic model in terms of principal stretches. A proof-of-concept and performance is shown on a simple model problem where the hyperelastic strain energy density function is chosen in polynomial form.