• 제목/요약/키워드: graphene layer

검색결과 348건 처리시간 0.032초

The vacancy diffusion and the formation of dislocation in graphene : Tight-binding molecular dynamics simulation

  • Lee, Gun-Do;Yoon, Eui-Joon;Hwang, Nong-Moon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.54-55
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    • 2010
  • Vacancy defects in graphene can be created by electron or ion irradiation and those induce ripples which can change the electronic properties of graphene. Recently, the formation of defect structures such as vacancy defects and non-hexagonal rings has been reported in the high resolution transmission electron microscope (HR-TEM) of reduced graphene oxide [1]. In those HR-TEM images, it is noticed that the dislocations with pentagon-heptagon (5-7) pairs are formed and diffuses. Interestingly, it is also observed that two 5-7 pairs are separated and diffuse far away from each other. The separation of 5-7 pairs has been known to be due to their self-diffusion. However, from our tight-binding molecular dynamics simulation, it is found that the separation of 5-7 pairs is due to the diffusion of single vacancy defects and coalescence with 5-7 pairs. The diffusion and coalescence of single vacancy defects is too fast to be observed even in HR-TEM. We also implemented Van der Waals interaction in our tight-binding carbon model to describe correctly bi-layer and multi-layer graphene. The compressibility of graphite along c-axis in our tight-binding calculation is found to be in excellent agreement with experiment. We also discuss the difference between single layer and bi-layer graphene about vacancy diffusion and reconstruction.

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Intimate Understanding for Growth Mode of Graphene on Copper

  • 송우석;전철호;김수연;김유석;김성환;이수일;정대성;박종윤
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.181-181
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    • 2012
  • Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the evidences for two different growth modes of graphene on Cu investigated by varying carbon feedstock (C2H2 and CH4) and working pressure. The number of uniform graphene layer grown by C2H2 increased with increasing its injection time. A combined secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) study revealed a carbon-diffused Cu layer created below surface region of Cu substrate with the expansion of Cu lattice. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Based on various previous results and ours, we have successfully found that there are two selective growth modes for graphene on Cu substrate, and a desired mode can be chosen by tuning working pressure corresponding to the kind of carbon feedstock. We believe that this finding will shed light on high quality graphene growth and its multifaceted applications.

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Early Stage of Pentacene Growth on the CYTOP Doped Graphene Surface

  • Yang, Mi-Hyun;Lee, Kyoung-Jae;Kumar, Yogesh;Ihm, Kyuwook;Kang, Tai-Hee;Ahn, Joung-Real
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.142.1-142.1
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    • 2013
  • The patterning and doping technique enables graphene to replace the metal electrode as a charge injection layer in the pentacene based thin film transistor. However, it is known that pentacene molecules form lying-down coordination on the graphene surface. Pentacene thin film showed that the highly occupied molecular orbital is 0.2~0.4 eV lower in the standing up coordination than in the lying down coordination. Here, we report the formation of standing-up coordination and lowered HOMO level of the pentacene layer grown on the graphene layer doped with CYTOP.

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Direct Printing and Patterning of Highly Uniform Graphene Nanosheets for Applications in Flexible Electronics

  • 구자훈;이태윤
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.39.2-39.2
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    • 2011
  • With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

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그래핀 조셉슨 접합에서 초전류의 게이트 전압 의존성 (Gate-tunable Supercurrent in Graphene-based Josephson Junction)

  • 정동찬;이길호;도용주;이후종
    • Progress in Superconductivity
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    • 제13권1호
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    • pp.47-51
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    • 2011
  • Mono-atomic-layer graphene is an interesting system for studying the relativistic carrier transport arising from a linear energy-momentum dispersion relation. An easy control of the carrier density in graphene by applying an external gate field makes the system even more useful. In this study, we measured the Josephson current in a device consisting of mono-layer graphene sheet sandwiched between two closely spaced (~300 nm) aluminum superconducting electrodes. Gate dependence of the supercurrent in graphene Josephson junction follows the gate dependence of the normal-state conductance. The gate-tunable and relatively large supercurrent in a graphene Josephson junction would facilitate our understanding on the weak-link behavior in a superconducting-normal metal-superconducting (SNS) type Josephson junction.

트라이볼로지 관점에서의 그래핀 분자시뮬레이션 연구동향 (Review on Molecular Simulation of Graphene from a Tribological Perspective)

  • 김현준;정구현
    • Tribology and Lubricants
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    • 제36권2호
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    • pp.55-63
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    • 2020
  • Recently, graphene has attracted considerable attention owing to its unique electrical, optical, thermal, and mechanical properties. The broad spectrum of applications from optics, sensors, and electronics to biodevice have been proposed based on these properties. In particular, graphene has been proposed as a protective coating layer and solid lubricant for microdevices and nanodevices because of its high mechanical strength, chemical inertness, and low friction characteristics. During the past decade, extensive efforts have been made to explore the tribological characteristics of graphene under various conditions and to expand its applicability. In addition to the experimental approaches, the molecular simulations performed provide fundamental insights into the friction and wear characteristics of graphene resulting from molecular interactions. This work is a review of the studies conducted over the past decade on the tribological characteristics of graphene using molecular simulation. These studies demonstrate the principal mechanisms of the superlubricity of graphene and help clarify the influences of surface conditions on tribological behavior. In particular, the investigation of the effects of the number of layers, strength of adhesion to the substrate, surface roughness, and commensurability provides deeper insights into the tribological characteristics of graphene. These fundamental understandings can help elucidate the feasibility of graphene as a protective coating layer and solid lubricant for microdevices and nanodevices.

Controlling the Growth of Few-layer Graphene Dependent on Composition Ratio of Cu/Ni Homogeneous Solid Solution

  • Lim, Yeongjin;Choi, Hyonkwang;Gong, Jaeseok;Park, Yunjae;Jeon, Minhyon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.273.1-273.1
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    • 2014
  • Graphene, a two dimensional plane structure of $sp^2$ bonding, has been promised for a new material in many scientific fields such as physics, chemistry, and so on due to the unique properties. Chemical vapor deposition (CVD) method using transitional metals as a catalyst can synthesize large scale graphene with high quality and transfer on other substrates. However, it is difficult to control the number of graphene layers. Therefore, it is important to manipulate the number of graphene layers. In this work, homogeneous solid solution of Cu and Ni was used to control the number of graphene layers. Each films with different thickness ratio of Cu and Ni were deposited on $SiO_2/Si$ substrate. After annealing, it was confirmed that the thickness ratio accords with the composition ratio by X-ray diffraction (XRD). The synthesized graphene from CVD was analyzed via raman spectroscopy, UV-vis spectroscopy, and 4-point probe to evaluate the properties. Therefore, the number of graphene layers at the same growth condition was controlled, and the correlation between mole fraction of Ni and the number of graphene layers was investigated.

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ZnO 나노 분말 코팅 기반 건식전사 그래핀 전극 제작 및 유기태양전지 응용 (Partially Dry-Transferred Graphene Electrode with Zinc Oxide Nanopowder and Its Application on Organic Solar Cells)

  • 조영수;우채영;홍순규;이형우
    • 한국분말재료학회지
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    • 제27권4호
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    • pp.305-310
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    • 2020
  • In this study, partially dry transfer is investigated to solve the problem of fully dry transfer. Partially dry transfer is a method in which multiple layers of graphene are dry-transferred over a wet-transferred graphene layer. At a wavelength of 550 nm, the transmittance of the partially dry-transferred graphene is seen to be about 3% higher for each layer than that of the fully dry-transferred graphene. Furthermore, the sheet resistance of the partially dry-transferred graphene is relatively lower than that of the fully dry-transferred graphene, with the minimum sheet resistance being 179 Ω/sq. In addition, the fully dry-transferred graphene is easily damaged during the solution process, so that the performance of the organic photovoltaics (OPV) does not occur. In contrast, the best efficiency achievable for OPV using the partially dry-transferred graphene is 2.37% for 4 layers.

Electrical transport characteristics of deoxyribonucleic acid conjugated graphene field-effect transistors

  • Hwang, J.S.;Kim, H.T.;Lee, J.H.;Whang, D.;Hwang, S.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.482-483
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    • 2011
  • Graphene is a good candidate for the future nano-electronic materials because it has excellent conductivity, mobility, transparency, flexibility and others. Until now, most graphene researches are focused on the nano electronic device applications, however, biological application of graphene has been relatively less reported. We have fabricated a deoxyribonucleic acid (DNA) conjugated graphene field-effect transistor (FET) and measured the electrical transport characteristics. We have used graphene sheets grown on Ni substrates by chemical vapour deposition. The Raman spectra of graphene sheets indicate high quality and only a few number of layers. The synthesized graphene is transferred on top of the substrate with pre-patterned electrodes by the floating-and-scooping method [1]. Then we applied adhesive tapes on the surface of the graphene to define graphene flakes of a few micron sizes near the electrodes. The current-voltage characteristic of the graphene layer before stripping shows linear zero gate bias conductance and no gate operation. After stripping, the zero gate bias conductance of the device is reduced and clear gate operation is observed. The change of FET characteristics before and after stripping is due to the formation of a micron size graphene flake. After combined with 30 base pairs single-stranded poly(dT) DNA molecules, the conductance and gate operation of the graphene flake FETs become slightly smaller than that of the pristine ones. It is considered that DNA is to be stably binding to the graphene layer due to the ${\pi}-{\pi}$ stacking interaction between nucleic bases and the surface of graphene. And this binding can modulate the electrical transport properties of graphene FETs. We also calculate the field-effect mobility of pristine and DNA conjugated graphene FET devices.

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