• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.13-13
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• 2011

Graphene based nano-electronic and nano-electromechanical devices will be introduced in this presentation. The first part of the presentation will be covered by our recent results on the fabrication and physical properties of artificially twisted bilayer graphene. Thanks to the recently developed contact transfer printing method, a single layer graphene sheet is stacked on various substrates/nano-structures in a controlled manner for fabricating e.g. a suspended graphene device, and single-bilayer hybrid junction. The Raman and electrical transport results of the artificially twisted bilayer indicates the decoupling of the two graphene sheets. The graphene based electromechanical devices will be presented in the second part of the presentation. Carbon nanotube based nanorelay and A new concept of non-volatile memory based on the carbon nanotube field effect transistor together with microelectromechanical switch will be briefly introduced at first. Recent progress on the graphene based nano structures of our group will be presented. The array of graphene resonators was fabricated and their mechanical resonance properties are discussed. A novel device structures using carbon nanotube field effect transistor combined with suspended graphene gate will be introduced in the end of this presentation.

• 공업화학
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• 제31권1호
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• pp.25-29
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• 2020

본 연구에서는 롤 공정으로 제작된 고분자(polydimethylsiloxane, PDMS)/그래핀(graphene) 복합재료를 기판으로 하여 간단한 표면처리 공정을 통해 센서를 구현하였고, 이 센서의 성능과 거동에 대한 고찰을 실시하였다. 고분자와 그래핀 파우더를 혼합한 전구체를 3-롤 공정으로 제조하였고, 이를 2-롤 공정에 도입하여 고분자/그래핀 기판 소재를 제조하였다. 나아가, 간단한 표면처리 공정을 통하여 센서의 요체가 되는 환형 다당류(cyclodextrin, CD)를 도입하였다. 표면처리의 유효성의 적외선 분광기를 통해서 확인하였고, 전기 신호 전달의 가능성을 옴의 법칙을 통하여 분석하였다. 간단한 형태의 센서를 구현하여, 분석 물질(methyl paraben, MePRB)을 도입하였을 때, 아주 낮은 농도 수준(10 nM)까지 감지 신호를 얻을 수 있었다. 특히, 그래핀의 함량이 낮을 경우 센서 측정이 어려움을 확인할 수 있었다. 이는, 높은 그래핀 함량에서 보여주는 그래핀 입자의 배향이 다소 억제되어 발생하였을 것으로 사료된다. 이는 첨가제의 물리적인 배향이 센서의 성능에 영향을 미칠 수 있다는 것을 의미한다. 이 정보는 향후 유사한 시스템의 센서를 구현하는 연구에 도움이 될 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.145.1-145.1
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• 2013

A prerequisite for the development of graphene-based field effect transistors (FETs) is reliable control of the type and concentration of carriers in graphene. These parameters can be manipulated via the deposition of atoms, molecules, and polymers onto graphene as a result of charge transfer that takes place between the graphene and adsorbates. In this work, we demonstrate a unique and facile methodology for the homogenous and stable p-type doping of graphene by hybridization with ZnO thin films fabricated by MeV electron beam irradiation (MEBI) under ambient conditions. The formation of the ZnO/graphene hybrid nanostructure was attributed to MEBI-stimulated dissociation of zinc acetate dihydrate and a subsequent oxidation process. A ZnO thin film with an ultra-flat surface and uniform thickness was formed on graphene. We found that homogeneous and stable p-type doping was achieved by charge transfer from the graphene to the ZnO film.

• 폴리머
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• 제38권2호
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• pp.232-239
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• 2014

용액 삽입(solution intercalation) 방법을 이용하여 다양한 나노 필러들을 포함하는 poly(lactic acid)(PLA) 나노 복합체를 합성하였다. 유기화 반응 처리된 벤토나이트 점토(NSE), 옥타데실아민(ODA)을 산화 그래핀(GO)에 반응한 ODA-GO, 그리고 유기화 처리된 벤토나이트와 ODA-GO의 복합체인 NSE/ODA-GO 등이 PLA 복합체 필름을 얻기 위한 나노 필러로 각각 사용되었다. 3가지 나노 필러들은 0-10 wt%의 함량으로 사용되었고 PLA 복합체 필름들의 열적-기계적 성질, 모폴로지, 산소 투과도 결과들을 서로 비교하였다. 투과전자현미경을 통하여 얻은 결과에서 NSE/ODA-GO 복합체는 약간 뭉쳐있었지만, NSE나 ODA-GO 등의 필러들은 PLA 매트릭스에 분산이 매우 양호하였음을 알 수 있었다. PLA 복합체 합성을 위해 사용된 3가지 필러 중에서, 열적 안정성에서는 NSE/ODA-GO가 가장 효과적이었지만, 기계적 인장 성질이나 산소 차단성에서는 각각 NSE와 ODA-GO가 가장 우수하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• 한국기계가공학회지
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• 제12권6호
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• pp.3-9
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• 2013

Aluminum Oxide($Al_2O_3$) ceramics are excellent candidates for such applications due to their outstanding mechanical, thermal, and tribological properties. However, they are difficult to machine using conventional mechanical methods. Carbon fillers, such as carbon nanotubes(CNT) and graphene nanoplatelets(GNP)can be dispersed in a ceramic matrix to improve the mechanical and electrical properties. In this study, CNT and Graphene reinforced hybrid ceramic composites were fabricated using the spark plasma sintering method at a temperature of $1,500^{\circ}C$, pressure of 40 MPa, and soaking time of 10min. Besides this, the material properties such as microstructure, crystal structure, hardness, and electrical conductivity were analyzed using FE-SEM, XRD, Vickers, and the 4-point probe method. A micro machining test was carried out to compare the effects of the material properties and the machining performance for CNT and Graphene reinforced ceramic composites.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.468-468
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• 2013

Self-assembled silver nanoparticles were synthesized on a graphene film to investigate plasmonic effect. Graphene was synthesized on glass substrate using chemical vapor deposition method and transfer process. Silver nanoparticles were formed using thermal evaporator and post-annealing process. The shape of silver nanoparticles was measured using a scanning electron microscopy. The resonance wavelength of plasmonic effect on graphene-silver nanoparticles was measured using transmittance spectra. The plasmon resonance wavelength was increased from 400 nm to 424 nm according to the lateral dimension of silver nanoparticles. Also we confirmed a strong plasmon effect form Raman spectra, which were measured on graphene-silver nanoparticles. The result shows that plasmon resonance wavelength could be controlled by lateral dimension of silver nanoparticles, and transparent conductive films based on plasmonic graphene could be developed.

• 폴리머
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• 제36권5호
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• pp.656-661
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• 2012

케이지 구조의 POSS-$NH_3{^+}$를 이용하여 팔라듐 입자들의 자기 조직화로 인한 구조가 제어된 Pd-POSS 나노입자를 제조하였다. 또한 흑연을 강산과 산화제를 이용하여 산화된 그래핀 옥사이드(GO)를 합성한 후 얻어진 GO와 NaBH4와의 반응을 통하여 그래핀을 제조하였다. 합성된 그래핀과 acrylic acid와 라디칼 중합 반응을 통하여 그래핀 표면에 poly(acrylic acid)(PAA)가 결합된 PAA-grafted graphene을 얻었다. Pd-POSS와 PAA-grafted graphene을 이용한 나노복합체는 POSS-$NH_3{^+}$로 인하여 양전하를 띠는 Pd-POSS 나노입자와 PAA로 인하여 음전하를 띠는 PAA-grafted graphene와의 정전기적 인력을 이용하여 제조하였다. Pd-POSS 나노입자가 PAA로 치환된 그래핀 표면에 정전기적 인력으로 결합되어 있고, 나노복합체의 열적 안정성은 PAA와 PAA-grafted graphene 보다 우수한 것을 확인할 수 있었다. 제조된 Pd-POSS/PAA-grafted graphene 나노복합체의 구조 및 형태와 열적 안정성은 FE-SEM, AFM, TEM, EDX, FTIR과 TGA를 통하여 분석하였다.

• Carbon letters
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• 제13권2호
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• pp.130-132
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• 2012

In this study, cobalt oxide ($Co_3O_4$)/graphene composites were synthesized through a simple chemical method at various calcination temperatures. We controlled the crystallinity, particle size and morphology of cobalt oxide on graphene materials by changing the annealing temperatures (200, 300, $400^{\circ}C$). The nanostructured $Co_3O_4$/graphene hybrid materials were studied to measure the electrochemical performance through cyclic voltammetry. The $Co_3O_4$/graphene sample obtained at $200^{\circ}C$ showed the highest capacitance of 396 $Fg^{-1}$ at 5 $mVs^{-1}$. The morphological structures of composites were also examined by scanning electron microscopy and transmission electron microscopy (TEM). Annealing $Co_3O_4$/graphene samples in air at different temperatures significantly changed the morphology of the composites. The flower-like cobalt oxides with higher crystallinity and larger particle size were generated on graphene according to the increase of calcination temperature. A TEM analysis of the composites at $200^{\circ}C$ revealed that nanoscale $Co_3O_4$ (~7 nm) particles were deposited on the surface of the graphene. The improved electrochemical performance was attributed to a combination effect of graphene and pseudocapacitive effect of $Co_3O_4$.

• 정보저장시스템학회논문집
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• 제9권1호
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• pp.22-27
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• 2013

In this paper we are presenting a architecture of Co ion decorated graphene oxide as an electrode for supercapacitor application. Graphene oxide, which is exfoliated by oxidant from graphite, is the material for solving the problem of mass production and coating on the surface of working electrode. The $Co^{2+}$ ions are coated by using layer by layer(LBL) method on graphene oxide foam. The metal ion decorated graphene oxide shows enhanced capacitance performance when tested as supercapacitor electrode, showing the specific capacitance of $827Fg^{-1}$.