• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.5
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• pp.463-469
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• 2015

In this study, we synthesized graphene oxide and developed novel spin-spray coating technology. The graphene oxide thin film was uniformly coated on amine-functionalized glass surfaces using spin-spray coating technology. We also stacked up to four layers of graphene oxide on glass substrates in a uniform manner. From the results, we infer that this spin-spray coating of graphene oxide thin film could be a powerful tool for various electronic display coating applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.72-72
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals have been studied intensely. Especially, graphene which have unprecedented performance fulfillments in versatile research fields leads a parade of 2D atomic crystals. In this talk, I will introduce the electrical characterization and applications of graphene for prominently electrical transistors realization. Even the rising 2D atomic crystals such as hexagonal boron nitride (h-BN), molybdenum disulfide (MoS2) and organic thin film for field effect transistor (FET) toward competent enhancement will be mentioned.

• Korean Chemical Engineering Research
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• v.50 no.4
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• pp.754-757
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• 2012

In this report, we fabricate the porous graphene films through embossing process and vacuum filtration method and demonstrate their superior electrochemical properties as supercapacitor electrode materials. Insertion/removal of polystyrene nanoparticles between the graphene sheets allows to provide pore structures, leading to the effective prevention of restacking in graphene films. As-prepared porous graphene films have a large surface area, a bicontinuous porous structures, high electrical conductivity, and excellent mechanical integrity. The electrochemical properties of the porous graphene films as electrode materials of supercapacitor are investigated by using aqueous $H_2SO_4$ and ionic liquid solution under three-electrode system. The porous graphene films exhibit a high specific capacitance (284.5 F/g), which is two-fold higher than that of packing graphene films (138.9 F/g). In addition, the rate capability (98.7% retention) and long-term cycling stability (97.2%) for the porous graphene films are significantly enhanced, due to the facilitated ion mobility between the graphene layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.329-329
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• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.55-61
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• 2017

Graphene, with a carrier mobility achieving up to $140,000cm^2/Vs$ at room temperature, makes it an ideal material for application in semiconductor devices. However, when the metal comes in contact with the graphene sheet, an energy barrier forms at the metal-graphene interface, resulting in a drastic reduction of the carrier mobility of graphene. In this review, the various methods of forming metal-graphene covalent contacts to lower the contact resistance are discussed. Furthermore, the graphene sheet in the area of metal contact can be cut in certain patterns, also discussed in this review, which provides a more efficient approach to forming covalent contacts, ultimately reducing the contact resistance for the realization of high-performance graphene devices.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.694-699
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• 2014

We report the chemical vapor deposition growth characteristics of graphene on various catalytic metal substrates such as Ni, Fe, Ag, Au, and Pt. 50-nm-thick metal films were deposited on $SiO_2/Si$ substrates using dc magnetron sputtering. Graphene was synthesized on the metal/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90 % Ar (99 SCCM) using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The highest quality of graphene film was achieved on Ni and Fe substrates at $900^{\circ}C$ and 500 W of ICP power. Ni substrate seemed to be the best catalytic material among the tested materials for graphene growth because it required the lowest growth temperature ($600^{\circ}C$) as well as showing a low ICP power of 200W. Graphene films were successfully grown on Ag, Au, and Pt substrates as well. Graphene was formed on Pt substrate within 2 sec, while graphene film was achieved on Ni substrate over a period of 5 min of growth. These results can be understood as showing the direct CVD growth of graphene with a highly efficient catalytic reaction on the Pt surface.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• Carbon letters
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• v.22
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• pp.42-47
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• 2017

In this paper, the in vitro biocompatibility of graphene film (GF) with osteoblasts was evaluated through cell adhesion, viability, alkaline phosphatase activity, F-actin and vinculin expressions, versus graphite paper as a reference material. The results showed that MG-63 cells exhibited stronger cell adhesion, better proliferation and viability on GF, and osteoblasts cultured on GF exhibited vinculin expression throughout the cell body. The rougher and wrinkled surface morphology, higher elastic modulus and easy out-of-plane deformation associated with GF were considered to promote cell adhesion. Also, the biomineralization of GF was assessed by soaking in simulated body fluid, and the GF exhibited enhanced mineralization ability in terms of mineral deposition, which almost pervaded the entire GF surface. Our results suggest that graphene promotes cell adhesion, activity and the formation of bone-like apatite. This research is expected to facilitate a better understanding of graphene-cell interactions and potential applications of graphene as a promising toughening nanofiller in bioceramics used in load-bearing implants.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.147-147
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• 2016

In general, organic electrochromic (EC) materials have been known to be electrochemically unstable during the ionic exchange process. One effective method to realize stable EC materials is incorporating graphene derivatives in the polymer matrix, by using the strong interaction between graphene derivatives and polymer. However, previous studies are limited graphene derivatives. In this study, we developed a polymer-graphene derivative complex with the chemical assistance of a surfactant (octadecylamine, ODA). Surfactant-assisted graphene oxide (GO-ODA) was introduced as a protective layer on the electrochromic poly (3-hexyl thiophene) (P3HT) films by the Langmuir-Schaefer method. The deposition of GO-ODA protective layer with high coverage was confirmed by atomic force microscopy. The strong interactions between GO-ODA and P3HT were examined with UV-Vis spectrophotometry and X-ray photoelectron spectroscopy. Electrochemical and electrochromic investigations revealed that the GO-ODA layer greatly improved the long-term cyclability of the P3HT film. These findings imply that the GO-ODA complex has a significant role in creating stable EC cycling, due to its strong interaction with the P3HT film.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1546-1549
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• 2018

We have investigated core-levels of ZnO thin films at the interface with the graphene on Cu foil using in-situ X-ray Photoelectron Spectroscopy (XPS). Spectral evolution of C 1s, Zn 2p, and O 1s are observed in real time during RF sputtering deposition. We found binding energy (BE) shifts of Zn 2p and 'Zn-O' state of O 1s depending on ZnO film thickness. Core-levels BE shifts of ZnO will be discussed on the basis of electron transfer at the interface and it may have an important role in the electronic transport property of the ZnO/graphene-based electronic device.