• Journal of Powder Materials
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• v.1 no.2
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• pp.208-216
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• 1994

A radically new approach to the in situ synthesis of the consituent phases of a composite structure has enabled the production of a new WC/Co materials with an ultrafine microstructure. The process for synthesizing nanophase WC/Co powders consists of spray drying from solution to form a homogeneous precursor powder, and thermochemical conversion of the precursor powder to the nanophase WC/Co powder. Near theoretical density of pure nanophase WC-10 wt%Co has been obtained in only 30 sec at 140$0^{\circ}C$. But WC particles were grown up very rapidly with longer sintering time to get full density. To overcome coarsening of WC particle during sintering, VC, TaC and VC/TaC were used as the grain growth inhibitor with different amount respectively. VC/TaC doped WC-10 wt%Co was shown superior hardness and TRS and microstructure was maintained ultrafine scale (average WC size is less than 0.1 ${\mu}{\textrm}{m}$).

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.165-166
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• 2010

• Journal of Powder Materials
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• v.9 no.4
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• pp.273-279
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• 2002

In this study, the WC-10 wt.%Co nanopowders doped by grain growth inhibiter were produced by three different methods based on the spray conversion process. Agglomerated powders with homeogenous distribution of alloying elements and with internal particles of about 100-200 nm in diameter were synthesized. The microstructural changes and sintering behavior of hardmetal compacts were compared with doping method and sintering conditions. The microstructure of hardmetals was very sensitive to doping methods of inhibitor. Nanostructured WC-Co hardmetal powder compacts containing TaC/VC doped by chemical method instead of ball-milling shown superior sintering densification, and the microstructure maintained ultrafine scale with rounded WC particles.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.659-667
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• 1997

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.637.1-637.1
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.533-536
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• 2003

YIG(Yttrium Iron Garnet) is one of the most widely used ferrites for microwave telecommunication. It used as a passive devices such as isolators and circulators. In order to reduce the insertion losses of these passive devices, it is very important to reduce magnetic loss of the ferrites. In general, the magnetic losses of ferrites is closely related to the microstructure of the ceramics. In the sintering of YIG, pores are easily trapped in grains and grain boundaries. These pores cause to increase magnetic losses of the sinterted bodies. In this paper, the effect of the $SiO_2$ addition on the microstructure was discussed. Increasing the $SiO_2$ addition, the grain size was reduced, which means that added acts as a grain-growth inhibitor. During the sintering, $SiO_2$ settled down on the grain boundaries, and drag the grain growth. Therefore, there is enough time for pores to move out. The relative density of YIG sintered at $1350^{\circ}C$ with 1 mol% $SiO_2$ addition was 99.6%. $\Delta$H of these samples was under 50 Oe.

• Journal of Powder Materials
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• v.12 no.1
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• pp.43-50
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• 2005

Mechanical alloying using high-energy ball mill and subsequent spark plasma sintering (SPS) process was applied to Al-Fe-Cr and Al-Fe-Mo powder mixture to investigate effects of Cr and Mo addition on thermal stability of Al-Fe, and thereby to enhance its thermal stability up to $500^{\circC}$. Various analytical techniques including micro-Vickers hardness test, SEM, TEM, X-ray diffractometry and corrosion test were carried out. It was found that addition of Cr and Mo to Al-Fe system played a role of grain growth inhibitor of matrix Al and some precipitates such as $Al_3Fe$ during SPS and subsequent heat treatment. The inhibition of grain growth resulted in increased Vickers hardness and thermal stability up to $500^{\circC}$ comparing to those of Al-Fe alloy system.

• Journal of the Korean Ceramic Society
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• v.28 no.7
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• pp.541-548
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• 1991

Sinterability and stability of TZP ceramics co-stabilized by 12 mol% CeO2 and divalent or trivalent oxides less than 1 mol% were investigated. Divalent and trivalent oxides increased stability of tetragonal ZrO2. 100% tetragonal ZrO2 phase was obtained by doping 12 mol% CeO2 and 0.2 mol% CaO and MgO respectively when sintering was carried out at 1500$^{\circ}C$ for 2 hours. Divalent and trivalent oxides improved sinterability and inhibit grain growth of ZrO2. And it was found that CaO was the most effective sintering aid and grain growth inhibitor for ZrO2 in this study. Incorporation of divalent and trivalent oxides into 12Ce-TZP increased the strength of 12Ce-TZP and particulary 12Ce, 0.4Ca-TZP exhibited a flexural strength of about twofold greater than 12Ce-TZP.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.889-890
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• 2006

In recent years, PCB drills with smaller diameters less than 0.1 mm are used and thus there are growing needs for ultra-fine grained cemented carbides. However, ultra-fine WC powder usually causes extraordinary grain growth during sintering which weakens mechanical strength of ultra-fine grained cemented carbides. So we examined several kinds of WC powders to make new ultra-fine grained cemented carbides having superior performance. We found that direct carburized WC powder is very good as a WC raw material. The PCB drills made of the developed ultra-fine grained cemented carbides have higher hardness, toughness and stiffness than conventional ones.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.7-12
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• 1986

Dielectric properties of $Ba_{0.9}Ca_{0.1}(Ti_{1-x}Sn_x)O_3$ were investigated from x=0 to 0.20, and temperature range -4$0^{\circ}C$~13$0^{\circ}C$ Density and grain size decreased with increasing Sn content due to grain growth inhibitor. Dielectric constant below the Curie temperature increased with increasing Sn content and dissipation factor dec reased. These results are due to grain size effect and internal stress. Curie temperature was shifted to lower temperature with increasing ratio of total polarizability to volume resulting from substitution of $Ba^{2+}$ ion with $Ca^{2+}$ ion $Ti^{4+}$ ion with $Sn^{4+}$ ion.