• 한국주조공학회지
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• 제23권5호
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• pp.276-285
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• 2003

In the undercooled melt of $Pd_{40}Cu_{30}Ni_{10}P_{20}$ alloy, the solidification behavior including nucleation and growth of crystals at the micrometer level has been observed in-situ by use of a confocal scanning laser microscope combined with an infrared image furnace. The $Pd_{40}Cu_{30}Ni_{10}P_{20}$ alloy specimens were cooled from the liquid state to glass transition temperature. 575 K, at various cooling late under a helium gas flow. According to the cooling rate, the morphologies of the solidification front are changed among various types, irregular jog like front, columnar dendritic front, cellular grain, star like shape jog and fine grain, etc. The velocities of the solid-liquid interface are measured to be $10^{-5}{\sim}10^{-8}$ m/s which are at least two orders higher than the theoretical crystal growth rates. Combining the morphologies observed in terms of cooling rates and their solidification behaviors, we conclude that phase separation takes place in the undercooled molten $Pd_{40}Cu_{30}Ni_{10}P_{20}$ alloy. The continuous cooling transformation (CCT) diagram was constructed from solidification onset time at various linear cooling conditions with different rate. The CCT diagram suggests that the critical cooling rate for glassy solidification is about 1.5 K/s, which is in agreement with the previous calorimetric findings.

• 대한금속재료학회지
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• 제49권8호
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• pp.596-600
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• 2011

Thermal degradation behavior of a $WO_3-TiO_2$ monolithic catalyst was investigated in terms of structural, morphological, and physico-chemical analyses. The catalyst with 4 wt.% $WO_3$ contents were prepared by a wet-impregnation method, and a durability test of the catalysts were performed in a temperature range between $400^{\circ}C$ and $800^{\circ}C$ for 3 h. An increase of thermal stress decreased the specific surface area, which was caused by grain growth and agglomeration of the catalyst particles. The phase transition from anatase to rutile occurred at around $800^{\circ}C$ and a decrease in the Brønsted acid sites was confirmed by structural analysis and physico-chemical analysis. A change in Brønsted acidity can affect to the catalytic efficiency; therefore, the thermal degradation behavior of the $WO_3-TiO_2$ catalyst could be explained by the transition to a stable rutile phase of $TiO_2$ and the decrease of specific surface area in the SCR catalyst.

• 한국분말재료학회지
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• 제7권2호
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• pp.93-101
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• 2000

In order to clarify the enhanced sintering behavior of nanostructured(NS) W-Cu powder prepared by mechaincal alloying, the sintering behavior during heating stage was analysed by a dilatometry with various heating rates. The sintering of NS W-Cu powders was characterized by the densification of two stages, having two peaks in shrinkage rate curves. The temperature at which the first peak appear was much lower than Cu melting point, and dependent on heating rate. On the basis of the shrinkage rate curves and the microstructural observation, the coupling effect of nanocrystalline W-grain growth and the liquid-like behavior of Cu phase was suggested as a possible mechanism for the enhanced sintering of NS W-Cu powder in the state.

• 한국전자통신학회논문지
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• 제8권4호
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• pp.549-554
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• 2013

CVD를 이용하여 Cu 시편에 그래핀의 합성을 보이고, Cu 시편의 grain 크기와 방향성에 따른 그래핀의 성장거동을 보이고자 한다. 동일한 온도 및 압력 하에서도 사용하는 분위기 가스의 종류에 따라서 Cu의 확산에 영향을 주게 되고, 그래핀 합성 시 사용되는 $H_2$와 $CH_4$ 가스 분위기 하에서 Cu grain의 성장에도 영향을 미치는 것을 알 수 있었으며, 결과적으로 Cu grain의 성장이 그래핀의 합성과 성장에 직접적인 관련이 있음을 보이고자 하였다. 부식 저항성은 상온에서 동전위 분극실험를 통하여 분석하였으며, 부식속도 비교에서 그래핀 코팅된 Cu 시편의 경우가 그래핀의 화학적 안정성에 기인하여 순수 Cu 시편의 경우보다 동일한 부식 환경에서 약 10배 정도 안정적인 것으로 관찰이 되었다. 또한, grain boundary를 포함, 결함이 없는 그래핀의 균일한 성장의 가능성을 보이고, 이의 합성을 통한 공학적인 활용이 그 최종적인 목적이 될 것이다.

• Bulletin of the Korean Chemical Society
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• 제32권7호
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• pp.2237-2242
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• 2011

Anomalous scaling behaviors such as significantly large growth exponent (${\beta}$) and small reciprocal of dynamic exponent (1/z) values for many molecular crystalline thin films have been reported. In this study, the variation of scaling exponent values and consequent growth behaviors of molecular thin films were more quantitatively analysed using a (1+1)-dimensional surface lateral diffusion model. From these simulations, influence of step edge barriers and grain boundaries of molecular thin films on the various scaling exponent values were elucidated. The simulation results for the scaling exponents were also well consistent with the experimental data for previously reported molecular thin film systems.

• 한국세라믹학회지
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• 제19권4호
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• pp.267-274
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• 1982

The sintering behavior and B-H loop properties of $Li_{0.5O4}$ with the addition of $Nb_2O_5$ and $V_2O_5$ have been investigated by observation of microstructures and measurement of semi-static hysteresis loops. The sintering temperature was lowered by the additions of $Nb_2O_5$ and $V_2O_5$ and the effect of $V_2O_5$ addition was greater than that of $Nb_2O_5$. The abnormal grain growth was observed at about 100$0^{\circ}C$(d:4.6g/㎤) and 85$0^{\circ}C$(d:4.5g/㎤) in the specimens with the addition of $Nb_2O_5$ and $V_2O_5$ respectively. The addition of $Nb_2O_5$ retulted in a large and uniform grain size, and the addition of $V_2O_5$ resulted in a uniform grain size but the final density was lower than that of the pure specimen. The squareness was increased and the coercive force was decreased by the addition of $Nb_2O_5$, and the squareness was decreased and the coercive force was increased by the addition of $V_2O_5$. These effects could be explained by a large and uniform grain size, and by a lower final density of specimens with the addition of $Nb_2O_5$ and $V_2O_5$ respectively.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1997년도 추계학술대회논문집
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• pp.220-223
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• 1997

This paper presents the prediction of microstructure of Inconel 718 disk forgings. The experiments are carried out to examine the recrystallization ratio and grain growth in the forgings. In the experiments, cylindrical billets are forged by two operations with variations of forging temperature and reduction ratio of deformation. Also the finite element program, developed here for the prediction, is used for the analysis, and the results are compared with the experimental ones. It is noted that the comparison appears in sound agreement.

• 대한금속재료학회지
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• 제47권8호
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• pp.466-473
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• 2009

Our group previously observed the intrinsic stress evolution of Cu thin films during deposition by changing the deposition rate. Intrinsic stress of Cu thin films, which show Volmer-Weber growth, is reported to display three unique stress stages, initial compressive, broad tensile, and incremental compressive stress. The mechanisms of the initial compressive stress and incremental compressive stages remain subjects of debate, despite intensive research inquiries. The tensile stress stage may be related to volume contraction through grain growth and coalescence to reduce over-accumulate Cu adatoms on the film surface. The in-situ intrinsic stresses behavior in Cu thin films was investigated in the present study using a multi-beam curvature measurement system attached to a thermal evaporation device. The effect of substrate surface roughness was monitored by observed the in-situ intrinsic stress behavior in Cu thin films during deposition, using $100{\mu}m$ thick Si(111) wafer substrates with three different levels of surface roughness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.9-9
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• 2009

1 wt % Ga-dope ZnO (ZnO:Ga) thin films with n-type semiconducting behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering at various growth temperatures. The room temperature grown ZnO:Ga film showed the faint preferred orientation behavior along the c-axis with small domain size and high density of stacking faults, despite limited surface diffusion of the deposited atoms. The increase in the growth temperature in the range between $300\sim550^{\circ}C$ led to the granular shape of epitaxial ZnO:Ga films due to not enough thermal energy and large lattice mismatch. The growth temperature above $550^{\circ}C$ induced the quite flat surface and the simultaneous improvement of electrical carrier concentration and carrier mobility, $6.3\;\times\;10^{18}/cm^3$ and $27\;cm^2/Vs$, respectively. In addition, the increase in the grain size and the decrease in the dislocation density were observed in the high temperature grown films. The low-temperature photoluminescence of the ZnO:Ga films grown below $450^{\circ}C$ showed the redshift of deep-level emission, which was due to the transition from $Zn_j$ to $O_i$ level.

• 한국해양공학회지
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• 제2권2호
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• pp.104-111
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• 1988

This paper deals with the micro-surface-cracks behavior on the unnotched smooth specimens of Type 304 stainless steel at $593^{\circ}C$ in air under creep and creep-fatigue conditions that have 10 mim and 1 min load holding times respectively. The behaviors of the micro-surface-cracks have been visualized by means of surface replica method and optical micro-photography. The quantitative characteristics of initiation, growth and coalescence of micro-surface-cracks have been investigated by observing and measuring the crack growth behaviors. some of the important results are as follows: Main crack initiates at grain boundary in the early stage(10 to 20%)of its life time and grows through coalescence and finally leads to fracture. The distribution of micro-surface-crack length, 2a, can be plotted against the composite Weibull distribution. The growth rate of the main crack can be plotted against the stress intensity factor, crack tip opering displacement and J integral.