• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1153-1154
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• 2006

Effects of sintering conditions such as sintering temperature and heating rate on oxygen content, density, microstructure and toughness of sintered Mo were investigated. The oxygen content of the sintered Mo significantly depended on the sintering conditions. The oxygen content of the primary sintered(below 1673 K) Mo influenced the densifications. The number of pores at grain boundaries of the secondary sintered(at 2073 K)Mo depended on the oxygen content of the primary sintered Mo. Grain growth of the secondary sintered Mo was inhibited by the existence of pores at the grain boundaries. The secondary sintered Mo having larger number of pore and smaller grain size demonstrated higher strength.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.75-76
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• 2006

In this paper, the polycrystalline silicon photodiodes utilizing vertically directed current path are investigated. The location of electrodes is considered with the grain direction and the current path. The relationships between grain boundaries and characteristics of photodiode are simulated to apply the vertically grown polycrystalline silicon to photodiodes. From the results, the vertically grown polycrystalline silicon photodiode is a potential candidate for CMOS image sensor. However, the increment of dark current related to grain boundaries should be reduced.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1995년도 춘계학술대회논문집
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• pp.238-251
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• 1995

Creep of metals has been explained conventionally by dislocation climb and grain boundary sliding indiffusion controlled process. The reorienations of the atoms in the grain by three dimensional crystallizing $\pi$-bondings are visualized as grain rotatins during slow deformation, fold formatin at triple point, increased crevice dspace between grains. grain boundary sliding, grain boundary micration and formation of cracks at the grain boundaries . And also the rupture time and average creep strain rate are explained by the three-dimensional crystallizing $\pi$- bondings and they can be determined by uniaxial tensile test.

• 한국결정성장학회지
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• 제10권2호
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• pp.122-127
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• 2000

불규칙 입자형성을 갖는 Ce-TZP와 알루미나가 분산된 Ce-TZP 세라믹스를 세라아 도핑조선과 열처리 조건을 변화시켜 제조한 다음, 미세구조를 관찰하였다. 제조된 시편들은 상대밀도가 99% 이상인 고밀도의 소결체였으며, 정방정 및 입방정상 지르코니아 입자로 구성되었다. 도핑하지 않거나 소결만 시킨 시편의 경우 직선적인 입계와 정상적인 입자형성을 나타낸데 비하여 세리아를 침적법으로 도핑한 후 고온으로 열처리한 시편에서는 확산구동 입계이동이 일어나 입계 및 입자형성이 불규칙하였으며. 이러한 Ce-TZP에서는 입자당 평균 입계같이 정상입자에 비하여 크게 증가하였다. 알루미나를 분산시켜 소결한 {{{{ { Al}_{2 }{ O}_{3 } }}}}/Ce- TZP 시편의 경우, 알루미나 입자에 의해서 입성장이 크게 억제되었고, 세리아를 도핑한 후 소결과 열처리를 행한 {{{{ { Al}_{2 }{ O}_{3 } }}}}/Ce-TZP에서는 불규칙 입자형상이 형성되면서도 입성장이 억제되어 입자크기에 비하여 입계면적이 크게 증가하였다. 분산된 알루미나 입자들은 소결과 열처리 과정 중 입자크기가 증가하였고, 열처리 동안 많은 입자들이 입계에서 입내로 위치가 변화하였다. 정상적인 입자형성을 갖은 시편에서는 균열진전시 입계파괴가 주로 일어났으나 불규칙 입자형성을 갖는 시편에서는 주로 입내파괴가 관찰되었다.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 1999년도 제6회 산화철국제워크샵 DIGESTS OF THE INTERNATIONAL WORKSHOP ON IRON OXIDES
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• pp.1-63
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• 1999

Generation of abnormally large grains in the microstructure of small grains has been investigated on some ferrites. Some fractions of large grains were observed in the microstructure of sintered ZnFe$_2$O$_4$, Mn-ZnFe$_2$O$_4$, Fe$_3$O$_4$(in N$_2$) and MnFe$_2$O$_4$(in air). On the other hand, the large grains were not observed in NiFe$_2$O$_4$ and CoFe$_2$O$_4$, independent of calcining and sintering conditions. The large grains seem to be generated in such ferrites that are easy to vary their compositions or valencies at high temperatures. As the sintering proceeded, the number of large grains was increasing to form a continuous structure consisting of large grains, while the size of large grains did not increase remarkably. In addition, the growth of small grains was also very slow during the generation of the large grains. The large grains appeared to be suddenly generated after some induction periods. Avrami equation could be applied to the relation between net volume of large grains and sintering time. Thus, the grain boundaries may be strongly stabilized when the large grains are generated. The large grain in generated by the local activation of the stabilized grain boundaries, which is caused by the variation of compositions or valencies during sintering. It is concluded that the essence of the abnormal grain growth is not the generation of abnormally large grains, but the abnormal stabilization and the local activation of the grain boundaries.

• Current Photovoltaic Research
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• 제2권1호
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.200-200
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• 2003

Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.

• Journal of Welding and Joining
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• 제21권2호
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• pp.82-88
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• 2003

The bonding phenomenon and mechanism in the transient liquid phase bonding(TLP Bonding) of directionally solidified Ni base superalloy, GTD-111 was investigated. At the bonding temperature of 1403K, liquid insert metal was eliminated by isothermal solidification which was controlled by the diffusion of B and Si into the base metal and solids in the bonded interlayer grew epitaxially from mating base metal inward the insert metal. The number of grain boundaries formed at the bonded interlayer was corresponded with those of base metal. The liquation of grain boundary and dendrite boundary occurred at 1433K. At the bonding temperature of 1453K which is higher than liquation temperature of grain boundary, liquids of the Insert metal were connected with liquated grain boundaries and compositions in each region mixed mutually. In Joints held for various time at 1453t phases formed at liquated grain boundary far from the interface were similar to those of bonded interlayer. With prolonged holding time, liquid phases decreased gradually and liquids of continuous band shape divided many island shape. But liquid phases did not disappeared after holding for 7.2ks at 1453k. Isothermal solidification process at the bonding temperature which is higher than the liquation temperature of the grain boundary was controlled by diffusion of Ti to be result in liquation than B or Si. in insert metal. (Received January 15, 2003)

• Corrosion Science and Technology
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• 제12권6호
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• pp.265-273
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• 2013

Ti-stabilized 11 wt% Cr ferritic stainless steels (FSSs) for automotive exhaust systems have been experienced intergranular corrosion (IC) in some heat-affected zone (HAZ). The effects of sensitizing heat-treatment and silicon on IC were studied. Time-Temperature-Sensitization (TTS) curves showed that sensitization to IC was observed at the steels heat-treated at the temperature lower than $650^{\circ}C$ and that silicon improved IC resistance. The sensitization was explained by chromium depletion theory, where chromium is depleted by precipitation of chromium carbide during sensitizing heat-treatment. It was confirmed with the results from the analysis of precipitates as well as the thermodynamical prediction of stable phases. In addition, the role of silicon on IC was explained with the stabilization of grain boundary. In other words, silicon promoted the formation of the grain boundaries with low energy where precipitation was suppressed and consequently, the formation of Cr-depleted zone was retarded. The effect of silicon on the formation of grain boundaries with low energy was proved by the analysis of coincidence site lattice (CSL) grain boundary, which is a typical grain boundary with low energy.

• 한국결정성장학회지
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• 제6권3호
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• pp.431-438
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• 1996

투과전자현미경을 이용하여 고온가압소결된 $TiB_{2}$의 미세구조를 분석하였다. Ionbeam thinning에 의해서 준비된 박편시편은 육방정계 $TiB_{2}$의 결정학적 이방성에 기인한 특징을 보여주었다. 이들 시편에서 철분 불순물은 결정입 3중점, 결정입계 그리고 결정내에 2차상을 형성하는 것으로 확인되었고, 결정입 3중점이나 결정입계 혹은 matrix에서 유리하게 배향된 결정입에 coherence or semi-coherence한 특징을 나타내었다.