• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.6
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• pp.459-464
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• 2008

We present a novel microcantilever device with nano-interdigitated electrodes (nano-IDEs) and DNA selective immobilization on the nano-IDEs for biosensing applications. Using the nano-IDEs and cyclic voltammetric methods, we have achieved selective immobilization of DNA with submicrometer spatial resolution on a freestanding microcantilever. $70{\sim}500\;nm$-wide gold (Au) nano-IDEs are fabricated on a low-stress SiNx microcantilever with dimensions of $100{\sim}600\;{\mu}m$ in length, and $15{\sim}60\;{\mu}m$ in width, with a $0.5\;{\mu}m$ thickness using electron beam lithography and bulk micromachining. Streptavidin is selectively deposited on one side of the nano-IDEs using cyclic voltammetry at a scan rate of 0.1 V/s with a range of $-0.2{\sim}0.7\;V$ during $1{\sim}5$ cycles. The selective deposition of dsDNA is confirmed by fluorescence microscopy after labeling with YOYO-1 dye.

• The Plant Pathology Journal
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• v.29 no.1
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• pp.105-109
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• 2013

Raman spectroscopy provides many advantages compared to other common analytical techniques due to its ability of rapid and accurate identification of unknown specimens as well as simple sample preparation. Here, we described potential of Raman spectroscopic technique as an efficient and high throughput method to detect plants infected by economically important viruses. To enhance the detection sensitivity of Raman measurement, surface enhanced Raman scattering (SERS) was employed. Spectra of extracts from healthy and Turnip yellow mosaic virus (TYMV) infected Chinese cabbage leaves were collected by mixing with gold (Au) nanoparticles. Our result showed that TYMV infected plants could be discriminated from non-infected healthy plants, suggesting the current method described here would be an alternative potential tool to screen virus-infection of plants in fields although it needs more studies to generalize the technique.

• Economic and Environmental Geology
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• v.19 no.1
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• pp.19-24
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• 1986

The Samkwang mine is one of gold deposits distributed mainly in the southwestern province (Chungnam) of the Korean peninsula. Golds occur in quartz veins aged of $223{\pm}4MA$ according to K-Ar age dating from muscovite in a pegmatitic quartz vein. Quantz veins intrude Precambrian biotite-granite gneiss and mica schist of unknown age. Fluid inclusions in the quartz show a range of homogenization temperatures from 159 to $274^{\circ}C$. A calculated temperature from the isotopes of the galena-sphalerite pair is $375^{\circ}C$. Two phases-fluid inclusions homogenized either by liquid or vapor phase are frequently observed in specimens over $260^{\circ}C$, which may indicate the boiling of the fluids. Pressure of formation of the quartz veins inferred by the homogenization temperatures of liquid-$CO_2$ bearing fluid is 1kb. Based on these data, it is assumed that the temperature of the formation of the Samkwang mine may lie in between $350^{\circ}-230^{\circ}C$. ${\delta}^{34}S_{{\Sigma}s}$ values of sulphide minerals show narrow range of +2.1 to +4.6, and show a trend of enrichments of $^{34}S$ in the fluid from deep to the surface. ${\delta}^{34}S_{{\Sigma}s}$ in the fluid estimated is less than 3 permil, suggesting sulphur fluid originated from the magma.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.4
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• pp.41-46
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• 2005

In this paper, a new method for suppressing microwelding on the RF MEMS (Radio Frequency Microelectromechanical System) direct contact switches is introduced. Two kinds of refractory metals, tungsten and molybdenum were coated onto the contact point of the switches and the effect of the coating was examined. The changes in insertion loss and isolation at the switch were measured by using network analyzer and power loss was evaluated by power measurement. The results revealed that while tungsten and molybdenum showed higher contact resistance than gold in low input power range, they enhanced the power handling capability and reliability of the switches in high input power region.

• Journal of Applied Reliability
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• v.7 no.1
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• pp.23-29
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• 2007

Probe card is a test component which is to classify the known good die with electrical contact before the packaging in the ATE (automatic testing equipment). Conventional probe tip was mostly needle type, it has been difficult to meet with conventional type, because of decreasing chip size, pad to pad pitch and pads size increasingly. For that reason, probe cards using MEMS (micro electro mechanical system) technology have been developed for various semiconductor chips. In this paper, Area Array type MEMS Probe tip was designed,, fabricated, and characterized its mechanical and electrical properties. The authors found that good electrical characteristics under $1{\Omega}$ were acquired with gold (Au) and aluminium (Al) pad contact test over 0.5gf and 4gf respectively. And, contact resistance variation under $0.1{\Omega}$ were achieved with 100,000 times of repetition test. And, insertion loss (IS) for high frequency operation was ascertained over 300MHz at -3dB loss.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1405-1409
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• 2007

The potential-induced charge transfer of the dye (Bu4N)2[Ru(dcbpyH)2-(NCS)2] (N719) on Au, Ag, and Cu electrode surfaces has been examined by surface-enhanced Raman scattering (SERS) in the applied voltage range between 0.0 and ?0.8 V. N719 is assumed to have a relatively perpendicular geometry with its bipyridine ring on the metal surfaces. A strong appearance of the carboxylate band at ~1370 cm-1 indicates that the carboxyl group will likely be deprotonated on the metal surfaces. As the electric potential is shifted from ?0.8 to 0.0 V, the ν (NCS) band at ~2100 cm-1 on the electrode surfaces appears to undergo a shift in frequency and intensity change. This indicated that the charge transfer between the dye and metal electrode surfaces had occurred. Electric-field-dependent charge transfer differs somewhat depending on the type of metal surfaces as suggested from the dissimilar frequency positions of the ν (NCS) band.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.25-27
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• 2005

Sn-9Zn solder balls were bonded to Cu and ENIG (Electroless Nickel/Immersion Gold) pads, and the effect of aging on their joint reliability was investigated. The interfacial products were different from the general reaction layer formed in a Sn-base solder. The intermetallic compounds formed in the solder/Cu joint were $Cu_{5}Zn_{8}$ and $Cu_{6}Sn_{5}$. After aging treatment, voids formed irregularly at the bottom side of the solder because of Sn diffusion into the $Cu_{5}Zn_{8}$ IMC. In the case of the solder/ENIG joint, $AuZn_{3}$ IMCs were formed at the interface. In the case of the Sn-9Zn/ENIG, the shear strength remained nearly constant in spite of aging for 1000 hours at $150^{\circ}C$. On the other hand, in the case of the Sn-9Zn/Cu, the shear strength significantly decreased after aging at $150^{\circ}C$ for 100hours and then remained constant by further prolonged aging. Therefore, the protective plating layer such as ENIG must be used to ensure the mechanical reliability of the Sn-9Zn/Cu joint.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.115-118
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• 2005

Currently, molecular devices are reported utilizing active self-assembled monolayers (SAMs) containing the nitro group as the active component, which has active redox centers [1]. SAMs are ordered molecular structures formed by the adsorption of an active surfactant on a solid surface. The molecules will be spontaneously oriented toward the substrate surface and form an energetically favorable ordered layer. During this process, the surface-active head group of the molecule chemically reacts with and chemisorbs onto the substrate In this paper, the electrical properties of the 4'4- di(ethynylphenyl)-2'-nitro-1-benzenethiolate was confirmed. This material is well known as a conducting molecule having possible application to molecular level negative differential resistance (NDR) device. To deposit the self-assembly monolayers onto the gold electrode, the prefabricated Au(1 l l) substrates were immersed into 0.5[mM/l] self-assembly molecule in THF solution. Then, the electrical properties and surface morphologies of 4' 4-di(ethynylphenyl)-2' -nitro-1-benzenethiolate were measured by using the ultra-high vacuum scanning tunneling microscopy (UHV-STM).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.2
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• pp.77-82
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• 2018

Electromagnetic wave transmission through periodic metal-insulator-metal(MIM) waveguides as a function of plate thickness has not been extensively studied at various terahertz frequencies. In this paper, we investigate the transmittances through gold MIM slits when a normally incident wave with parallel polarization is considered at several terahertz frequencies. In addition, the results are compared to the case of a perfect electric conductor, and the differences are discussed.

• Current Applied Physics
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• v.18 no.11
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• pp.1381-1387
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• 2018

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (${\Lambda}=700 nm$) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module. Apart from this, grating devices of smaller periodicity (${\Lambda}=280nm$) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).