• Tribology and Lubricants
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• 제37권6호
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• pp.208-212
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• 2021

Chemical mechanical polishing (CMP) is a key technology used for the global planarization of thin films in semiconductor production and smoothing the surface of substrate materials. CMP is a type of hybrid process using a material removal mechanism that forms a chemically reacted layer on the surface of a material owing to chemical elements included in a slurry and mechanically removes the chemically reacted layer using abrasive particles. Sapphire is known as a material that requires considerable time to remove materials through CMP owing to its high hardness and chemical stability. This study introduces a technology using electrolytic ionization and ultraviolet (UV) light in sapphire CMP and compares it with the existing CMP method from the perspective of the material removal rate (MRR). The technology proposed in the study experimentally confirms that the MRR of sapphire CMP can be increased by approximately 29.9, which is judged as a result of the generation of hydroxyl radicals (·OH) in the slurry. In the future, studies from various perspectives, such as the material removal mechanism and surface chemical reaction analysis of CMP technology using electrolytic ionization and UV, are required, and a tribological approach is also required to understand the mechanical removal of chemically reacted layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.191-195
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• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.171-175
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion - usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder tripe conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usual1y scraped. Figure 1 shows the typical shape of scratch damaged from diamond. We suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning, so new designed Flat stripper was introduced.

• Industrial Engineering and Management Systems
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• 제4권1호
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• pp.54-67
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• 2005

This paper provides an evaluation of an optimization-based, multiple-input double-output (MIDO) run-to-run (R2R) control scheme for general semiconductor manufacturing processes. The controller in this research, termed adaptive dual response optimizing controller (ADROC), can serve as a process optimizer as well as a recipe regulator between consecutive runs of wafer fabrication. In evaluation, it is assumed that the equipment model could be appropriately described by a pair of second-order polynomial functions in terms of a set of controllable variables. Of practical relevance is to consider a drifting effect in the equipment model since in common semiconductor practice the process tends to drift due to machine aging and tool wearing. We select a typical application of R2R control to chemical mechanical planarization (CMP) in semiconductor manufacturing in this evaluation, and there are five different CMP process scenarios demonstrated, including mean shift, variance increase, and IMA disturbances. For the controller, ADROC, an on-line estimation technique is implemented in a self-tuning (ST) control manner for the adaptation purpose. Subsequently, an ad hoc global optimization algorithm based on the dual response approach, arising from the response surface methodology (RSM) literature, is used to seek the optimum recipe within the acceptability region for the execution of next run. The main components of ADROC are described and its control performance is assessed. It reveals from the evaluation that ADROC can provide excellent control actions for the MIDO R2R situations even though the process exhibits complicated, nonlinear interaction effects between control variables, and the drifting disturbances.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.17-21
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• 2011

Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.