• 한국재료학회지
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• 제15권5호
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• pp.306-312
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• 2005

The hydrogen sorption properties of $Ti_{0.3}Zr_{0.2}V_{0.5}$ NEC(non-evaporable getter) alloy and its hydrides were evaluated at room temperature. The alloy and hydride powders were prepared by the Hydride-DeHydride(HDH) method. The hydrogen sorption speed of $Ti_{0.3}Zr_{0.2}V_{0.5}$ alloy was measured to increase with the amounts of hydride phase in the getter. The hydrogen sorption speeds of $Ti_{0.3}Zr_{0.2}V_{0.5},\;(Ti_{0.3}Zr_{0.2}V_{0.5})H_{1.52},\;and\;(Ti_{0.3}Zr_{0.2}V_{0.5})H_{1.94}$ were 2.22, 3.14 and 5.08 liter/sec, respectively. The unexpected enhancement of hydrogen sorption speed with the presence of the hydride phase is considered to be due to the pre-saturation of hydrogen trap sites which can retard the diffusion of hydrogen in the alloy.

• 한국분말재료학회지
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• 제14권1호
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• pp.56-62
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• 2007

Getter property of nano-sized metallic powders was evaluated as a possible candidate for the future getter material. For the purpose, Ti powders of about 50 nm were prepared by electrical wire explosion. Commercial Ti powders of about 22 micrometer were tested as well for comparison. The room-temperature hydrogen-sorption speed of nano-sized Ti powders was $1.34\;L/sec{\cdot}cm^{2}$ which was more than 4 times higher than that of micron-sized ones. The value is comparable to or even higher than those of commercial products. Its sorption speed increases with activation temperature up to $500^{\circ}C$ above which it deteriorates due to low-temperature sintering effect of nano-sized particles.

• 조명전기설비학회논문지
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• 제23권5호
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• pp.29-35
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• 2009

FED는 잠재적인 평판기술에 따라 현재 연구되고 있다. 이 논문의 제안은 FED 핵심적인 개발을 위한 진공 패키징 기술에 대한 연구결과를 보여준다. FED 진공 패키징을 위해서는 유리/유리 접합, 진공배기, 게터기술, 그리고 시뮬레이션, 진공패키징 기술을 연구하였다. 유리/유리 접합은 프릿 글래스를 사용하므로 형태에 따르고, 내부 압력은 $2{\times}10^{-5}$[Torr]이며 패널로서 완성을 보여준다. 게터의 결과에 따라 그것은 압력의 증가는 박막 게터에 의해 불순기체가 줄어드는 것을 보여주었다.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.74-78
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• 1999

For a high efficient field emission display (FED), the specific vacuum conditions below 10-7 Torr should be required. However, because the FED has the geometrical restriction due to its micro size, the thin film getters can be proposed for chemical pumping as a way to reduce impurity gases in the panel. The thin film getters, developed by employing the coating of new materials such as NI or Pt on getter surface, can be used without any activation process and show the enhanced sorption characteristics. Especially, using the Zr (1${\mu}{\textrm}{m}$) thin film getters with the Pt surface layer, the significant gettering for various active gases could be achieved from 9$\times$10-5 Torr to 1$\times$10-6 Torr or below. this good sorption properties is mainly contributed to the surface coating layer which shows the catalytic effect for gas dissociation and protects the getter materials against oxidation.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.150-150
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• 2005

• 한국수소및신에너지학회논문집
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• 제27권2호
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• pp.163-168
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• 2016

Korea has been developing nuclear fusion fuel storage and delivery system (SDS) technologies including a basic scientific study on hydrogen storage. To develop nuclear fusion technology, it is necessary to store and supply hydrogen isotopes needed for Tokamak operation. SDS is used for storing hydrogen isotopes as a metal hydride form. The rapid hydriding of tritium is very important not only for safety reasons but also for the economic design and operation of the SDS. In this study, we designed and fabricated a medium-scale getter bed of depleted uranium (DU). The hydriding of DU has been measured by varying the initial temperature ($100-300^{\circ}C$) of the DU getter bed to investigate the influence of the cooling temperature. Furthermore, we analyzed the effect of a helium blanket on the hydriding performance with 0 - 12% helium content in hydrogen.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.46-49
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• 2001

To estimate the influence of electrical properties due to the poly back seal(PBS). we were investigated defect density in surface by deposition thickness and breakdown voltage in specimens. Deposition thickness of specimen is prepared from 7,000[$\AA$] to 13,000[$\AA$], respectively. From the results, it is confirmed that PBS deposition thickness of 10,000[$\AA$] among the specimen is decreased defect density by contribution of the gettering effect.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1993년도 제5회 학술발표회 논문개요집
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• pp.39-39
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• 1993

A finite element analysis and Monte Carlo method have been applied to calculate the ppressure pprofiles around the ppohang Light Source (ppLS) electron storage ring with the aim of ppredicting the pperformance of the vacuum system designed for the ppLS vacuum system. After ppropperly choosing the design pparameters, the ppressure distribution are calculated as a function of the integrated stored beam current [AmppHrs]. The effect of changes of the vacuum pparameters, such as installed ppumpping sppeeds and synchrotron radiation induced gas desorpption rates on the ppressure pprofile, is also studied. The results indicate that the use of lumpped non-evapporable getter ppumpps together with spputter ion ppumpps for ppumpping the ppLS down to the required ppressure is ppossible in the ppresence of synchrotron induced gas loads, after resonable beam cleaning time.

• 센서학회지
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• 제10권5호
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• pp.292-303
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• 2001

본 연구에서는 수평형 전계 방출 소자를 제작하고 그 특성을 측정하였다. 이를 진공자장 센서에 이용하기 위하여 Lorentz 원리를 응용하여 센서를 설계하고 제작하였다. $POCl_3(10^{20}cm^{-3})$ 도핑된 다결정 실리콘을 전계 방출 소자의 음극 및 양극 재료로 이용하였으며 그 두께는 각각 $2\;{\mu}m$였다. PSG(두께 $2\;{\mu}m$)를 희생층으로 사용하여 최종 단계에서 불산을 이용하여 제거하고 승화건조법을 이용하여 소자의 기판 점착 현상을 방지하였다. 제작된 소자를 유리기판 #1 위에 silver paste로 고정시키고 Cr 전극 패드와 와이어본딩 한 뒤 진공내에서 양극접합공정을 이용하여 소자를 $1.0{\times}10^{-6}\;Torr$에서 진공 실장하였다. 실장 후 게터를 활성화하여 내부진공도를 향상시켰다. 이렇게 패키징된 소자는 두달여 기간 동안 특별한 특성저하 없이 잘 동작되었으며 그 이상의 기간에 대해서는 확인하지 못하였다. 패키징된 자장 센서는 패키징하기 전 진공챔버 내에서 보인 특성치와 별다른 차이 없이 잘 동작되었으며 단지 약간의 전류 감소 현상만이 관찰되었다. 측정된 센서의 감도는 약 3%/T로서 작은 값이었으나 그 가능성을 확인할 수는 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.