• Korean Journal of Materials Research
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• v.15 no.5
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• pp.306-312
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• 2005

The hydrogen sorption properties of $Ti_{0.3}Zr_{0.2}V_{0.5}$ NEC(non-evaporable getter) alloy and its hydrides were evaluated at room temperature. The alloy and hydride powders were prepared by the Hydride-DeHydride(HDH) method. The hydrogen sorption speed of $Ti_{0.3}Zr_{0.2}V_{0.5}$ alloy was measured to increase with the amounts of hydride phase in the getter. The hydrogen sorption speeds of $Ti_{0.3}Zr_{0.2}V_{0.5},\;(Ti_{0.3}Zr_{0.2}V_{0.5})H_{1.52},\;and\;(Ti_{0.3}Zr_{0.2}V_{0.5})H_{1.94}$ were 2.22, 3.14 and 5.08 liter/sec, respectively. The unexpected enhancement of hydrogen sorption speed with the presence of the hydride phase is considered to be due to the pre-saturation of hydrogen trap sites which can retard the diffusion of hydrogen in the alloy.

• Journal of Powder Materials
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• v.14 no.1 s.60
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• pp.56-62
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• 2007

Getter property of nano-sized metallic powders was evaluated as a possible candidate for the future getter material. For the purpose, Ti powders of about 50 nm were prepared by electrical wire explosion. Commercial Ti powders of about 22 micrometer were tested as well for comparison. The room-temperature hydrogen-sorption speed of nano-sized Ti powders was $1.34\;L/sec{\cdot}cm^{2}$ which was more than 4 times higher than that of micron-sized ones. The value is comparable to or even higher than those of commercial products. Its sorption speed increases with activation temperature up to $500^{\circ}C$ above which it deteriorates due to low-temperature sintering effect of nano-sized particles.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.5
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• pp.29-35
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• 2009

Field emission displays(FED) are currently being study as a potential flat technology. The purpose of this project shows the research result of vacuum packaging technology for the development of FED. For FED vacuum packaging, the bonding of glass/glass, the exhaust of vacuum and getter technology have been studied for vacuum packaging technology The simulation and vacuum sealing, and glass/glass bonding are also extensively studied. The glass/glass bonding is formed by using the frit glass and the Inside pressure of complete panel showed of $2{\times}10^{-5}$[Torr]. As a getter result, the increase of pressure has been showed the decrease of outgassing effect by using thin film getter.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.74-78
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• 1999

For a high efficient field emission display (FED), the specific vacuum conditions below 10-7 Torr should be required. However, because the FED has the geometrical restriction due to its micro size, the thin film getters can be proposed for chemical pumping as a way to reduce impurity gases in the panel. The thin film getters, developed by employing the coating of new materials such as NI or Pt on getter surface, can be used without any activation process and show the enhanced sorption characteristics. Especially, using the Zr (1${\mu}{\textrm}{m}$) thin film getters with the Pt surface layer, the significant gettering for various active gases could be achieved from 9$\times$10-5 Torr to 1$\times$10-6 Torr or below. this good sorption properties is mainly contributed to the surface coating layer which shows the catalytic effect for gas dissociation and protects the getter materials against oxidation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.150-150
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• 2005

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.2
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• pp.163-168
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• 2016

Korea has been developing nuclear fusion fuel storage and delivery system (SDS) technologies including a basic scientific study on hydrogen storage. To develop nuclear fusion technology, it is necessary to store and supply hydrogen isotopes needed for Tokamak operation. SDS is used for storing hydrogen isotopes as a metal hydride form. The rapid hydriding of tritium is very important not only for safety reasons but also for the economic design and operation of the SDS. In this study, we designed and fabricated a medium-scale getter bed of depleted uranium (DU). The hydriding of DU has been measured by varying the initial temperature ($100-300^{\circ}C$) of the DU getter bed to investigate the influence of the cooling temperature. Furthermore, we analyzed the effect of a helium blanket on the hydriding performance with 0 - 12% helium content in hydrogen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.46-49
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• 2001

To estimate the influence of electrical properties due to the poly back seal(PBS). we were investigated defect density in surface by deposition thickness and breakdown voltage in specimens. Deposition thickness of specimen is prepared from 7,000[$\AA$] to 13,000[$\AA$], respectively. From the results, it is confirmed that PBS deposition thickness of 10,000[$\AA$] among the specimen is decreased defect density by contribution of the gettering effect.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.39-39
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• 1993

A finite element analysis and Monte Carlo method have been applied to calculate the ppressure pprofiles around the ppohang Light Source (ppLS) electron storage ring with the aim of ppredicting the pperformance of the vacuum system designed for the ppLS vacuum system. After ppropperly choosing the design pparameters, the ppressure distribution are calculated as a function of the integrated stored beam current [AmppHrs]. The effect of changes of the vacuum pparameters, such as installed ppumpping sppeeds and synchrotron radiation induced gas desorpption rates on the ppressure pprofile, is also studied. The results indicate that the use of lumpped non-evapporable getter ppumpps together with spputter ion ppumpps for ppumpping the ppLS down to the required ppressure is ppossible in the ppresence of synchrotron induced gas loads, after resonable beam cleaning time.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.292-303
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• 2001

This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were $2\;{\mu}m$, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with $POCl_3(10^{20}cm^{-3})$. $2{\mu}m$-thick cantilevers were fabricated onto PSG($2{\mu}m$-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at $10^{-6}\;torr$. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3%/T at about 1 Tesla magnetic field.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.