• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.23-28
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• 2008

In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.

• Journal of Drive and Control
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• v.12 no.4
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• pp.15-20
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• 2015

Unlike a typical metal spring, a gas spring uses compressed gas contained in a cylinder and compressed by a piston to exert a force. A common application includes automobiles where gas spring are incorporated into the design of open struts that support the weight of tail gate. They are also used in furniture such as office chairs, and in medical and aerospace applications. The gas spring works by the application of pressurized gas (nitrogen) contained in a cylinder. The internal pressure of the gas spring greatly exceeds atmospheric pressure. This differential in pressure exists at any rod position and generates an outward force on the rod, making the gas spring extend. In this paper, we investigated the dynamic characteristics of a gas spring on an automotive tail gate system.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.237-239
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• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• Journal of Information Display
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• v.12 no.1
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• pp.61-67
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• 2011

A single-clock-driven shift register and a two-stage buffer are proposed, using p-type, low-temperature polycrystalline silicon thin-film transistors. To eliminate the clock skew problems and to reduce the burden of the interface, only one clock signal was adopted to the shift register circuit, without additional reference voltages. A two-stage, p-type buffer was proposed to drive the gate line load and shows a full-swing output without threshold voltage loss. The shift register and buffer were designed for the 3.31" WVGA ($800{\times}480$) LCD panel, and the fabricated circuits were verified via simulations and measurements.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.746-748
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• 1993

To overcome the problem of the diode reverse recovery in high switching frequency inverter, a new gate drive scheme is proposed for IGBT in this paper. Using this circuit, the reverse recovery current can be controlled and faster switching time can be achieved for hard switching inverter. The over-current protection method, which is suitable for the proposed gate driver, is also presented. The operation of the proposed circuit is investigated and its usefulness is verified through the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.25-28
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• 2000

In this study, Transient Characteristics of the Punch-Through Insulated Gate Bipolar Transistor (PT-IGBT) has been studied. On the contraty to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), PT-IGBT has buffer layer It has a simple drive circuit controlled by the gate voltage of the MOSFET and the low on-state resistance of the bipolar junction transistor. In this paper, the transient characteristics with temperature of the PT-IGBT has been analyzed analytically. PT-IGBT is made to reduce switching power loss. Excess Minority carrier distribution inactive base region and base charge, the rate of voltage with time is expressed analytically to include buffer layer.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.444-446
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• 1998

Pspice을 사용하여 IGBT의 게이트 드라이브의 동작과 시스템의 단락에 의한 Fault 발생시 IGBT를 보호하기 위해서 밀러 효과에 의한 전류를 게이트 저항을 통하지 않고 이미터로 흐르게 하여 게이트 전압의 상승을 줄여주는 방법을 제안하고 게이트 전압을 낮게 클램핑하는 방법과 비교하였다.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.539-542
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• 1987

This paper presents driving circuits technology to enable high speed drive of MOSFET, IGBT(Insulated Gate Bipolar Transistor) and SIT(Static Induction Transistor). In addition to, it demonstrates application circuits(high frequency resonant type inverters, ultrasonic power supply etc.) using the, developing drive circuits.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.10-15
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• 2008

In this paper, a new NMOS gate cross-connected current-mirror type bridge rectifier for UHF RFID applications is presented. The DC converting characteristics of the proposed rectifier are analyzed with the high frequency equivalent circuit and the gate capacitance reduction technique for reducing the gate leakage current due to the increasing of operating frequency is also proposed theoretically by circuitry method. As the results, the proposed rectifier shows nearly same DC output voltages as the existing NMOS gate cross-connected rectifier, but it shows the gate leakage current reduced to less than 1/4 and the power consumption reduced more than 30% at the load resistor, and it shows more stable DC supply voltages for the valiance of load resistance. In addition, the proposed rectifier shows high enough and well-rectified DC voltages for the frequency range of 13.56MHz HF(for ISO 18000-3), 915MHz UHF(for ISO 18000-6), and 2.45 GHz microwave(for ISO 18000-4). Therefore, the proposed rectifier can be used as a general purpose one to drive RFID transponder chips on various RFID systems which use specified frequencies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.22-25
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• 2001

A thyristor switch circuit for capacitor discharge application, of which the equivalent circuit includes a resistor between cathode and gate of a reverse-conducting thyristor and an avalanche diode anti-parallel between its anode and gate to set thyristor tum-on voltage, is monolithically integrated by planar process with AVE double-implantation method. To ensure a lower breakdown voltage of the avalanche diode for thyristor tum-on than the break-over voltage of the thyristor, $p^+$ wells on thyristor p base layer are made by boron implantation/drive-in for a steeper doping profile with higher concentrations while rest p layers of thyristor and free-wheeling diode parts are formed with Al implantation/drive-in for a doping profile of lower steepness. The free-wheeling diode part is isolated from the thyristor part by formation of separated p-well emitter for suppressing commutation between them, which is achieved during the formation of thyristor p-base layer.