• 대한전기학회논문지
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• 제43권2호
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• pp.244-250
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• 1994

This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.

• 전력전자학회논문지
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• 제4권2호
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• pp.111-121
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• 1999

대용량 IGBT를 위한 새로운 능동 게이트 구동회로를 제안한다. IGBT의 우수한 스위칭 성능을 성취하기 위해 필요한 여러 구동 조건들을 최적으로 조합시킨 게이트 구동 회로이다. 스위칭 노이즈와 스트레스를 감소시키기 위해 필요한 느린 구동 조건과 스위칭 속도를 증가시키고 손실을 저감시키기 위해 요구되는 고속 구동 조건들을 동시에 만족시키고 있다. 또한 작은 전류의 턴-온시 발생되는 진동현상을 효과적으로 감쇠시킬 수 있는 특성을 지니고 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 A
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• pp.325-327
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• 1995

A new gate drive circuit of classic converter for a switched reluctance motor is presented. Conventional gate drive circuit usually consists of the isolated power supplies and signal transferring devices for isolation, such as photo coupler, pulse transformer, and gate drive chips. The proposed gate drive circuit consists of resistors, capacitors, and zenor diodes without isolated power supplies, that make the drive circuit simple and reduce the material cost. The operational modes are classified and analyzed. The characteristics of the phase current and the gate signal of upper switches is investigated with the variation of duty ratio through the experiments.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.231-233
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• 1991

This paper discribes a study on the switching character of MOS-GTO and the design of gate drive circuit. Chopping power supply converter, synchronious and asyncronious motor speed adjustment, inverter, etc., needs low drive energy "high frequency" switches. To fulfill these need, switches must have rapid switching time and insulated gate control. MOS-GTO structure is well suited to these constraints. The power switch is serial installation of a GTO thyrister and a MOS Transistor. The gate of the GTO is linked to positive pole of the cascode structure via a MOS high voltage transistor and ground via a transient absorber diode. This high performance MOS-GTO assembly considerably increases the strength which facilitate the drive of GTO thyristers.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.580-583
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.81-82
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• Journal of Electrical Engineering and Technology
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• 제12권2호
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• pp.632-642
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• 2017

This paper presents an improved approach towards reducing the switching loss of insulated gate bipolar transistors (IGBTs) for a medium-capacity-class power conditioning system (PCS). In order to improve the switching performance, the switching operation is analyzed, and based on this analysis, an improved switching method that reduces the switching time and switching loss is proposed. Compared to a conventional gate drive scheme, the switching loss, switching time, and delay are improved in the proposed gate driving method. The performance of the proposed gate driving method is verified through several experiments.

• 대한전자공학회논문지SD
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• 제46권3호
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• pp.96-102
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• 2009

본 논문에서는 600V/200A 또는 1200V/150A와 같은 고전력 절연 게이트 소자를 구동 및 보호하기 위한 파워 IC에 대한 연구에 대해서 살펴보았다. 고전력 소자의 구동을 위해서 최대 Sourcing 전류 4A, 최대 Sinking 전류 8A로 설계하였으며, 과전류 보호회로로는 전력소자의 드레인(콜렉터) 전압을 측정하여, Desaturation을 검출하는 방식을 사용하였다. 또한 과전류 보호시 기생 인덕턴스에 의해 발생할 수 있는 과전압을 억제하기 위해서 soft-shutdown 기능을 추가하였다. 제안된 게이트 구동 IC는 동부하이텍의 고전압 BCDMOS 공정인 0.35um BDA350 공정과 PDK를 사용하여 설계 및 제작하여 검증하였다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.598-599
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• 2017

In motor application, High efficiency is important. So Design engineer select small gate resistor for lower switching. But There is side effect with small gate resistor. It makes large dv/dt and system request large EMI filter. It makes price increase. This paper introduce about gate drive IC which have solution both of lower loss and EMI issue.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.312-315
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• 1995

The base/gate drive suppression method proposed by Joshi and Bose is that which detects the output current polarity of the leg and, according to the polarity, suppresses the base/gate drive of one of the ore switching devices of the leg. This method has the merit that it does not have the conventional dead time problem, reduces the power loss of the driving circuit and others. But this method has difficulty in implementation. In this paper, a new base/gate drive suppression method by detecting not the output current polarity but the output voltage polarity is proposed. The proposed method is easier to implement than Joshi and Bose's method.