• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.244-250
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• 1994

This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.2
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• pp.111-121
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• 1999

This paper deals with an active gate drive (AGD) technolo밍T for high power IGBTs. It is based on an optimal c combination of several requirements necessmy for good switching performance under hard switching conditions, The s scheme specifically combines together the slow drive requirements for low noise and switching stress and the fast driver requirements for high speed switching and low switching energy loss The gate drive can also effectively dampen oscillations during low cunent turnlongrightarrowon transient in the IGBT, This paper looks at the conflicting requirements of the c conventional gate dlive circuit design and the experimental results show that the proposed threelongleftarrowstage active gate dlive t technique can be an effective solution.

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.325-327
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• 1995

A new gate drive circuit of classic converter for a switched reluctance motor is presented. Conventional gate drive circuit usually consists of the isolated power supplies and signal transferring devices for isolation, such as photo coupler, pulse transformer, and gate drive chips. The proposed gate drive circuit consists of resistors, capacitors, and zenor diodes without isolated power supplies, that make the drive circuit simple and reduce the material cost. The operational modes are classified and analyzed. The characteristics of the phase current and the gate signal of upper switches is investigated with the variation of duty ratio through the experiments.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.231-233
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• 1991

This paper discribes a study on the switching character of MOS-GTO and the design of gate drive circuit. Chopping power supply converter, synchronious and asyncronious motor speed adjustment, inverter, etc., needs low drive energy "high frequency" switches. To fulfill these need, switches must have rapid switching time and insulated gate control. MOS-GTO structure is well suited to these constraints. The power switch is serial installation of a GTO thyrister and a MOS Transistor. The gate of the GTO is linked to positive pole of the cascode structure via a MOS high voltage transistor and ground via a transient absorber diode. This high performance MOS-GTO assembly considerably increases the strength which facilitate the drive of GTO thyristers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.580-583
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.81-82
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• Journal of Electrical Engineering and Technology
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• v.12 no.2
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• pp.632-642
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• 2017

This paper presents an improved approach towards reducing the switching loss of insulated gate bipolar transistors (IGBTs) for a medium-capacity-class power conditioning system (PCS). In order to improve the switching performance, the switching operation is analyzed, and based on this analysis, an improved switching method that reduces the switching time and switching loss is proposed. Compared to a conventional gate drive scheme, the switching loss, switching time, and delay are improved in the proposed gate driving method. The performance of the proposed gate driving method is verified through several experiments.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.96-102
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• 2009

This paper deals with gate drive and power IC for high power devices(600V/200A and 1200V/150A). The proposed gate driver provides high gate driving capability (4 A source, 8 A sink), and over-current protected by means of power transistor desaturation detection. In addition, soft-shutdown function is added to reduce voltage overshoots due to parasitic inductance. This gate drive If is designed, fabricated, and tested using the Dongbu hitek 0.35um BCDMOS process.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.598-599
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• 2017

In motor application, High efficiency is important. So Design engineer select small gate resistor for lower switching. But There is side effect with small gate resistor. It makes large dv/dt and system request large EMI filter. It makes price increase. This paper introduce about gate drive IC which have solution both of lower loss and EMI issue.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.312-315
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• 1995

The base/gate drive suppression method proposed by Joshi and Bose is that which detects the output current polarity of the leg and, according to the polarity, suppresses the base/gate drive of one of the ore switching devices of the leg. This method has the merit that it does not have the conventional dead time problem, reduces the power loss of the driving circuit and others. But this method has difficulty in implementation. In this paper, a new base/gate drive suppression method by detecting not the output current polarity but the output voltage polarity is proposed. The proposed method is easier to implement than Joshi and Bose's method.