• 유체기계공업학회:학술대회논문집
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• 유체기계공업학회 2003년도 유체기계 연구개발 발표회 논문집
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• pp.562-567
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• 2003

This paper presents the method of Rate of Loading(ROL) improvement for the Motor Operated Gate Valve operating in high differential pressure condition. The character of ROL and Stem Factor is analyzed. Static test and dynamic test were performed and acquired the diagnosis signal for the valve closing stroke. The result of this study is the modification of stem factor is very important factor for the ROL improvement. In order to obtain the same value of dynamic test thread friction coefficient stem and stem nut should be combined appropriately.

• 한국유체기계학회 논문집
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• 제12권2호
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• pp.31-38
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• 2009

The valve performance has been evaluated from the theoretical equation based on design information such as packing thrust, spring preload and friction coefficient(${\mu}$). The accuracy of those data can be lower than that of vendor's initial design data. Especially, the friction coefficient can be degraded with time than the original condition and the valve performance calculated using the previous friction coefficient can not be available. Accordingly, this paper is describing a new performance evaluation method of valve based on diagnostic test data which are acquired from a site valve tested in static and dynamic conditions. Especially, this paper provides a new method using friction coefficient(${\mu}$) which is derived from the diagnostic test data acquired in the valve's design basis condition.

• ETRI Journal
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• 제35권3호
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• pp.425-430
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• 2013

In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage ($BV_{DS}$) and on-state current ($I_{D,MAX}$), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer ($SiO_2$) of a conventional RSO power MOSFET is changed to a multilayered insulator ($SiO_2/SiN_x/TEOS$). The inserted $SiN_x$ layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as $BV_{DS}$ and $I_{D,MAX}$, simulation studies are performed on the function of the gate configurations and their bias conditions. $BV_{DS}$ and $I_{D,MAX}$ are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This $I_{D,MAX}$ variation indicates the specific on-resistance modulation.

• 환경영향평가
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• 제19권3호
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• pp.231-245
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• 2010

The the purpose of this study was to analyze of the vegetation structure and phytosociological changes in the area adjacent to GeumJeong Mountain Fortress for fifteen years. The result of this study was as follows; Of the 8 quadrates, site of the North Gate 2 was having a highest in the number of extinct trees, 15 kinds. This is probably due to trampling effect caused by climbers' steps. Site of the West Gate 1 and South gate 1 each had 8 kinds of extinct trees, respectively. The number of newly appeared trees was highest at site of the North Gate 1, (8 kinds) followed by the sites of South gate 1 and South gate 2, respectively (5 kinds). The highest decrease in number of tree species was observed in North Gate 1, therefore, there is a strong relationship between vegetation diversity and the number of users of the available spaces. In order to revitalize the unstable vegetation structure of the Area Adjacent to GeumJeong Mountain Fortress, Robinia pseudo-acacia has to be well maintained in the shrub tree layer, and vines, such as Smilax china, Humulus japonicus, and Pueraria thungergiana, should be removed. To recover natural vegetation, dead leaf layer should be protected, and more shrub trees need to be planted. In the understory and shrub tree layer, multi layer tree planting is highly recommended to recover natural vegetation and increase tree diversity. In order to improve bad soil condition caused by trampling effect of recreational users, special treatments to the soil structure are required, such as mulching and raking soil. Also, depending on its soil damage from users trampling, the areas in the park should be divided into usable areas and user limited areas by the sabbatical year system. To improve the soil acidity due to acidic rain, soil buffering ability should be improved by activating microorganisms in the soil by using lime and organic material.

• 대한전자공학회논문지SD
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• 제45권10호
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• pp.1-6
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• 2008

고전압 MOSFET에서 스냅백 이후의 유지 전압은 구동전압에 비해 매우 작아서 고전압 MOSFET이 파워 클램프로 바로 사용될 경우 래치업 문제를 일으킬 수 있다. 본 연구에서는 Drain-Extended PMOS를 이용하여 래치업 문제가 일어나지 않는 구조를 제안하였다. 제안된 구조에서는 래치업의 위험을 피하기 위해 소자가 스냅백이 일어나지 않는 영역으로 동작 영역을 제한하였다. $0.35\;{\mu}m$ 60V BCD(Bipolar-CMOS-DMOS) 공정을 사용하여 제작된 칩을 측정한 결과를 통해 제안된 기존의 gate-driven 구조의 LDMOS(Lateral Double-Diffused MOS)를 사용한 ESD 파워 클램프에 비해 500% 성능향상(강인성)이 있게 된 것을 알 수 있다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.762-765
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• 2013

본 연구에서는 이중게이트 MOSFET의 게이트 산화막 두께의 변화에 따른 문턱전압이하 전류의 변화를 분석하였다. 이를 위하여 이중게이트 MOSFET의 채널 내 전위분포를 구하기 위하여 포아송방정식을 이용하였으며 이때 전하분포함수에 대하여 가우시안 함수를 사용하였다. 전위분포는 경계조건을 이용하여 채널크기에 따른 해석학적인 함수로 구하였다. 가우시안 함수의 변수인 이온주입범위 및 분포편차 그리고 게이트 산화막 두께 등에 대하여 문턱전압이하 전류 특성의 변화를 관찰하였다. 본 연구의 전위모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 문턱전압이하 전류 특성을 분석하였다. 분석결과, 문턱전압이하 전류는 게이트 산화막 두께 및 가우시안 분포함수의 변수 등에 크게 영향을 받는 것을 관찰할 수 있었다.

• 한국정보통신학회논문지
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• 제18권2호
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• pp.425-430
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• 2014

본 연구에서는 이중게이트 MOSFET의 게이트 산화막 두께 변화에 따른 문턱전압이하 전류의 변화를 분석하였다. 이중게이트 MOSFET의 채널 내 전위분포를 구하기 위하여 포아송방정식을 이용하였으며 이때 전하분포함수에 대하여 가우시안 함수를 사용하였다. 전위분포는 경계조건을 이용하여 채널크기에 따른 해석학적인 함수로 구하였다. 가우시안 함수의 변수인 이온주입범위 및 분포편차 그리고 게이트 산화막 두께 등에 대하여 문턱전압이하 전류 특성의 변화를 관찰하였다. 본 연구의 전위모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 문턱전압이하 전류 특성을 분석하였다. 분석결과, 문턱전압이하 전류는 게이트 산화막 두께 및 가우시안 분포함수의 변수 등에 크게 영향을 받는 것을 관찰할 수 있었다.

• 산업경영시스템학회지
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• 제40권1호
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• pp.35-40
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• 2017

A most important progress in civilization was the introduction of mass production. One of main methods for mass production is die-casting molds. Due to the high velocity of the liquid metal, aluminum die-casting is so complex where flow momentum is critical matter in the mold filling process. Actually in complex parts, it is almost impossible to calculate the exact mold filling performance with using experimental knowledge. To manufacture the lightweight automobile bodies, aluminum die-castings play a definitive role in the automotive part industry. Due to this condition in the design procedure, the simulation is becoming more important. Simulation can make a casting system optimal and also elevate the casting quality with less experiment. The most advantage of using simulation programs is the time and cost saving of the casting layout design. For a die casting mold, generally, the casting layout design should be considered based on the relation among injection system, casting condition, gate system, and cooling system. Also, the extent or the location of product defects was differentiated according to the various relations of the above conditions. In this research, in order to optimize the casting layout design of an automotive Oil Pan_BR2E, Computer Aided Engineering (CAE) simulation was performed with three layout designs by using the simulation software (AnyCasting). The simulation results were analyzed and compared carefully in order to apply them into the production die-casting mold. During the filling process with three models, internal porosities caused by air entrapments were predicted and also compared with the modification of the gate system and overflows. With the solidification analysis, internal porosities occurring during the solidification process were predicted and also compared with the modified gate system.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 V
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• pp.2851-2854
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• 2003

The purpose of this paper was to find out the stabilized and effective value of RC-parameter by using PSpice simulation, considering that gate signal voltage can be distorted by RC-delay of signal line. the results of this study were as follows: TFT-LCD with high quality resolution increased the number of gate signal line and this made TFT on-time shorter over-width of signal line to improve the performance of TFT made the electrostatic capacity increase and the time constant higher, making problems and errors. and owing to the decrease of the aperture ratio, an electro optic character of LCD, we must consider the capacity and the condition of production process in deciding the width and the thickness of the gate signal line.

• 한국농공학회:학술대회논문집
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• 한국농공학회 2001년도 학술발표회 발표논문집
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• pp.21-24
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• 2001

As one of the phil-environmental alternative plan of Saemankeum project, gradual development is recommended. The procedure of the Saemankeum project start with the completion of 32 km long sea-dikes which contains two discharge gates until the year 2004. Second step is pre-development of Mangyoung area permitting temporary intrusion of sea water, i.e. tides, by the opening of discharge gate until the environmental evaluation on the water quality of this area secures permanent meet to government's water quality standard. Therefore this study is to predict the future condition of this tidal flat with the point of view tidal environments, salt, water quality, soil mechanics, etc. of Mangyoung area when the sea water still passed in the inland reservoir through the discharge gate.