• Bulletin of the Korean Chemical Society
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• v.12 no.5
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• pp.537-540
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• 1991

Electrophilic methylation reactions of five-membered heteroaromatic compounds, furan, pyrrole and thiophene, with the dimethylfluoronium ion, ${CH_3}{FCH_3}(+), have been investigated theoretically by the MNDO method. The site selectivity of ${\alpha}, {\beta}$ and heteroatom (X) is related to charge density of the site, indicating that the site selectivity is dictated by electrosatic interaction between two reaction centers. The reactivity order between the three heteroaromatics can not be determined decisively since the order differs depending on which site is compared, with relatively low activation enthalpies, ${\Delta}{H^\neq}$= 20-30 kcal/mol, in all cases. These site and substrate selectivity behaviors are consistent with the gas-phase experimental results.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.48-55
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• 2024

Metal-oxide-based semiconductor gas sensors are widely used because of their advantages, such as high response and simple sensing mechanism. Recently, with the rapid progress in sensor networks, computing power, and microsystem technology, sensor applications are expanding to various fields, such as food quality control, environmental monitoring, healthcare, and artificial olfaction. Therefore, the development of highly selective gas sensors is crucial for practical applications. This article reviews the developments in novel sensor design consisting of sensing films and physical and chemical filters for highly selective gas sensing. Unlike conventional sensors, the sensor structures with filters can separate the sensing and catalytic reactions into independent processes, enabling selective and sensitive gas sensing. The main objectives of this study are directed at introducing the role of various filters in gas-sensing reactions and promising sensor applications. The highly selective gas sensors combined with a functional filter can open new pathways toward the advancement of high-performance gas sensors and electronic noses.

• Journal of Sensor Science and Technology
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• v.17 no.3
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• pp.178-182
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• 2008

Planar type micro catalytic combustible gas sensor was developed by using nano crystalline $SnO_2$ Pt thin film as micro heater was deposited by thermal evaporation method on the alumina substrate. The thickness of the Pt heater was around 160 nm. The sensor showed high reliability with prominent selectivity against various gases(Co, $C_3H_8,\;CH_4$) at low operating temperature($156^{\circ}C$). The sensor with nano crystalline $SnO_2$ showed higher sensitivity than that without nano crystalline $SnO_2$. This can be explained by more active adsorption and oxidation of hydrogen by nano crystalline $SnO_2$ particles. The present planar-type catalytic combustible hydrogen sensor with nano crystalline $SnO_2$ is a good candidate for detection of hydrogen leaks.

• Transactions of the Korean hydrogen and new energy society
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• v.15 no.2
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• pp.119-128
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• 2004

DME(Dimethyl Ether) was directly produced from the synthesis gas using the slurry phase reactor. The catalyst for DME production prepared two types (A type; Cu:Zn:Al=57:33:10, B type; Cu:Zn:Al=40:45:15, molar ratio). It was evaluated for the effect of the reaction medium oil using the small size slurry phase reactor. DME production yield and the methanol selectivity decreased in the order: n-hexadecane oil> mineral oil> therminol oil. The long-term test of DME production was carried out using A and B type catalyst, and n-hexadecane oil and mineral oil, respectively. It was confirmed that the use of A type for the catalyst and n-hexadecane for the reaction medium oil was very useful for the viewpoint of the DME production form the synthesis gas.

• Proceedings of the Membrane Society of Korea Conference
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• 1994.04a
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• pp.51-52
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• 1994

High permeability, selectivity and stability are the basic properties also required for membrane gas separations. The $CO_2$ separation by liquid membranes has been developed as a new technique to improve the permeability and selectivity of polymeric membranes. Sirkar et al.(1) have atlempted the hollow-fiber contained liquid membrane technique under four different operational modes, and permeation models have been proposed for all modes. Compared to a conventional liquid membrane, the diffusional resistance decreased by the work of Teramoto et al.(2), who referred to a moving liquid membrane. Recently, Shelekhin and Beckman (3) considered the possibility of combining absorption and membrane separation processes in one integrated system called a membrane absorber. Their analysis could be predicted effectively the performance of flat sheet membrane, however, there are restrictions for considering a flow effect. The gas absorption rate is determined by both an interfacial area and a mass transfer coefficient. It can be easily understood that although the mass transfer coefficients in hollow fiber modules are smaller than in conventional contactors, the substantial increase of the interfacial area can result in a more efficient absorber (4). In order to predict a performance in the general system of hollow-fiber membrane absorber, a gas-liquid mass transfor should be investigated inevitably. The influence of liquid velocity on both a mass transfer and a performance will be described, and then compared with experimental results. A present study is attempted to provide the fundamentals for understanding aspects of promising a hollow-fiber membrane absorber.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.49-54
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• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• Transactions of the Korean hydrogen and new energy society
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• v.32 no.1
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• pp.68-76
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• 2021

Climate change problems occur during the use of fossil fuel and the process of biogas production. Research continues to convert carbon dioxide and methane, the major causes of climate change, into high-quality energy sources. in order to present the performance potential for the novel plasma-recuperative burner reformer, the reforming characteristics for each variable were indentified. The optimal operating condition of was an O2/C ratio of 1.0 and a total gas supply of 20 L/min. At this time, CH4 conversion was 64%, H2 selectivity was 39%, and H2/CO ratio was 1.13, which were the results applicable to the solid oxide fuel cell fuel stack for RPG, or Residential Power Generator. Recirculation of reformed gas increases the amount of H2 and CO, which are combustible gases, especially the amount of H2. As a result, the H2 selectivity is improved, and high-quality gas can be produced.

• Clean Technology
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• v.20 no.4
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• pp.425-432
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• 2014

The effect of two important parameters of a catalytic membrane reactor (CMR), hydrogen selectivity and hydrogen permeance, coupled with an Ar sweep flow and an operating pressure on the performance of a water gas shift reaction in a CMR has been extensively studied using a one-dimensional reactor model and reaction kinetics. As an alternative pre-combustion $CO_2$ capture method, the feasibility of capturing a pressurized and concentrated $CO_2$ in a retentate (a shell side of a CMR) and separating a purified $H_2$ in a permeate (a tube side of a CMR) simultaneously in a CMR was examined and a guideline for a hydrogen permeance, a hydrogen selectivity, an Ar sweep flow rate, and an operating pressure to achieve a simultaneous capture of a concentrate $CO_2$ in a retentate and production of a purified $H_2$ in a permeate is presented. For example, with an operating pressure of 8 atm and Ar sweep gas for rate of $6.7{\times}10^{-4}mols^{-1}$, a concentrated $CO_2$ in a retentate (~90%) and a purified $H_2$ in a permeate (~100%) was simultaneously obtained in a CMR fitted with a membrane with hydrogen permeance of $1{\times}10^{-8}molm^{-2}s^{-1}Pa^{-1}$ and a hydrogen selectivity of 10000.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.630-636
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• 2006

Scale down of semiconductor gate pattern will make progress centrally line width into transistor according to the high integration and high density of flash memory semiconductor. Recently, the many researchers are in the process of developing research for using the ONO(oxide-nitride-oxide) technology for the gate pattern give body to line breadth of less 100 nm. Therefore, etch rate and etch profile of the line width detail of less 100 nm affect important factor in a semiconductor process. In case of increasing of the platen power up to 50 W at the ICP etcher, etch rate and PR selectivity showed good result when the platen power of ICP etcher has 100 W. Also, in case of changing of HBr gas flux at the platen power of 100 W, etch rate was decreasing and PR selectivity is increasing. We founded terms that have etch rate 320 nm/min, PR selectivity 3.5:1 and etch slope have vertical in the case of giving the platen power 100 W and HBr gas 35 sccm at the ICP etcher. Also notch was not formed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.7
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• pp.1-6
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• 2000

In this study, the effects of the addition of $N_2$ gas into the $Cl_2$ (90)/Ar(10) gas mixture, which has been proposed as the optimized etching gas combination, for etching of platinum was performed. The selectivity of platinum film to $SiO_2$ film etch mask increased with the addition of $N_2$ gas, and etch profile over 75 $^{\circ}$ could be obtained when 20 % additive $N_2$ gas was added. These phenomena were interpreted as the results of a formation of blocking layer such as Si-N or Si-O-N on the $SiO_2$ mask. The maximum etch rate of Pt film and selectivity of Pt to $SiO_2$ are 1425 ${\AA}$/min and 1.71, respectively. These improvements were considered to be due to the formation of more volatile compounds such as Pt-N or Pt-N-Cl.