• Title/Summary/Keyword: gap junction

검색결과 172건 처리시간 0.024초

$a-Si_{1-x}Ge_x:H$ 화합물(化合物) p-i-n 태양전지(太陽電池)의 물리(物理) 및 전류밀도(電流密度)-전압(電壓) 특성(特性) (Physics and current density-voltage characteristics of $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells)

  • 권영식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 C
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    • pp.1435-1438
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    • 1994
  • The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

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$28 A/cm^2~ 940 A/cm^2$의 임계전류밀도 범위로 제작된 $Nb/Al-AlO_x/Nb$ 터널접합의 전기적 특성 (Electrical Characteristics of $Nb/Al-AlO_x/Nb$ Tunnel Junction fabricated with $I_c$ Values in the Range of $28 A/cm^2~ 940 A/cm^2$)

  • 홍현권;김규태;박세일;김구현;남두우
    • 한국초전도ㆍ저온공학회논문지
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    • 제4권1호
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    • pp.4-7
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    • 2002
  • Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

Optimization of μc-SiGe:H Layer for a Bottom Cell Application

  • 조재현;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.322.1-322.1
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    • 2014
  • Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

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Current Status of Thin Film Silicon Solar Cells for High Efficiency

  • Shin, Chonghoon;Lee, Youn-Jung;Park, Jinjoo;Kim, Sunbo;Park, Hyeongsik;Kim, Sangho;Jung, Junhee;Yi, Junsin
    • Current Photovoltaic Research
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    • 제5권4호
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    • pp.113-121
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    • 2017
  • The researches on the silicon-based thin films are being actively carried out. The silicon-based thin films can be made as amorphous, microcrystalline and mixed phase and it is known that the optical bandgap can be controlled accordingly. They are suitable materials for the fabrication of single junction, tandem and triple junction solar cells. It can be used as a doping layer through the bonding of boron and phosphorus. The carbon and oxygen can bond with silicon to form a wide range of optical gap. Also, The optical gap of hydrogenated amorphous silicon germanium can be lower than that of silicon. By controlling the optical gaps, it is possible to fabricate multi-junction thin film silicon solar cells with high efficiencies which can be promising photovoltaic devices.

Bi-directional Two Terminal Switching Device based on SiGe for Spin Transfer Torque (STT) MRAM

  • Yang, Hyung-Jun;Kil, Gyu-Hyun;Lee, Sung-Hyun;Song, Yun-Heub
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.385-385
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    • 2012
  • A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

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Sucrose-permeability Induced by Reconstituted Connexin32 in Liposomes.

  • Rhee, Senng-Keun;Hong, Eun-Jnng
    • BMB Reports
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    • 제28권2호
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    • pp.184-190
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    • 1995
  • Functional study of the gap junction channel has been hindered by its inaccessibility in situ. Identification of forms of this channel in artificial membrane has been elusive because of the lack of identifying channel physiology. Connexin32 forms gap junction channels between neighboring cells in rat liver. Connexin32 was affinity-purified using a monoclonal antibody and reconstituted into artificial phospholipid vesicles. The reconstituted connexin32 formed channels through the vesicle membrane that were permeable to sucrose (Stokes radius: $5{\AA}$). The permeability to sucrose was reversibly reduced by acidic pH. In addition, the pH effect on the permeability to sucrose fit well with by the Hill's equation (where, n=2.7 and pK=6.7).

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Antioxidative Activity of Cherry Tomato (Lycopersicon lycopersicum var. cerasiforme) Extracts and Protective Effect for $H_2O_2$-induced Inhibition of Gap Junction Intercellular Communication

  • Kim, Su-Na;Choi, Won-Hee;Ahn, Ji-Yun;Ha, Tae-Youl
    • Food Science and Biotechnology
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    • 제18권3호
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    • pp.630-635
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    • 2009
  • This study was performed to analyze various antioxidants, to evaluate the antioxidative activities, and to measure the protective effect for gap junction intercellular communication (GJIC) to assess the functional potency of the cherry tomato. The ascorbic acid, lycopene, and ${\beta}-carotene$ were measured at $503.4{\pm}9.6$, $39.7{\pm}1.5$, and $7.4{\pm}0.3$ mg/100 g d.w., and ${\alpha}-$, ${\beta}+{\gamma}-$, ${\delta}-tocopherol$ contents were measured at $8.3{\pm}0.1$, $1.7{\pm}0.0$, and $0.1{\pm}0.0$ mg/100 g d.w., respectively. Cherry tomato extract using hexane/acetone/EtOH (2:1:1, CTE) exhibited a ABTS radical scavenging activity with an $IC_{50}$ value of $48.83{\pm}0.30\;{\mu}g/mL$. The cherry tomato protected against the inhibition of GJIC induced by $H_2O_2$ in WB-F344 rat liver epithelial cells, and the reduction in phosphorylated Cx43 was most clearly correlated with the concentration of CTE. These results demonstrated that the cherry tomato harbors a wealth of potent antioxidants and might be protect human body against the inhibition of the GJIC by toxic components.

High-fat Diet Accelerates Intestinal Tumorigenesis Through Disrupting Intestinal Cell Membrane Integrity

  • Park, Mi-Young;Kim, Min Young;Seo, Young Rok;Kim, Jong-Sang;Sung, Mi-Kyung
    • Journal of Cancer Prevention
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    • 제21권2호
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    • pp.95-103
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    • 2016
  • Background: Excess energy supply induces chronic low-grade inflammation in association with oxidative stress in various tissues including intestinal epithelium. The objective of this study was to investigate the effect of high-fat diet (HFD) on intestinal cell membrane integrity and intestinal tumorigenesis in $Apc^{Min/+}$ mice. Methods: Mice were fed with either normal diet (ND) or HFD for 12 weeks. The number of intestinal tumors were counted and biomarkers of endotoxemia, oxidative stress, and inflammation were determined. Changes in intestinal integrity was measured by fluorescein isothiocyanate (FITC)-dextran penetration and membrane gap junction protein expression. Results: HFD group had significantly higher number of tumors compared to ND group (P < 0.05). Blood total antioxidant capacity was lower in HFD group, while colonic 8-hydroxy-2'-deoxyguanosine level, a marker of oxidative damage, was higher in HFD group compared to that of ND group (P < 0.05). The penetration of FITC-dextran was substantially increased in HFD group (P < 0.05) while the expressions of membrane gap junction proteins including zonula occludens-1, claudin-1, and occludin were lower in HFD group (P < 0.05) compared to those in ND group. Serum concentration of lipopolysaccharide (LPS) receptor (CD14) and colonic toll-like receptor 4 (a LPS receptor) mRNA expression were significantly higher in HFD group than in ND group (P < 0.05), suggesting that significant endotoxemia may occur in HFD group due to the increased membrane permeability. Serum interleukin-6 concentration and myeloperoxidase activity were also higher in HFD group compared to those of ND group (P < 0.05). Conclusions: HFD increases oxidative stress disrupting intestinal gap junction proteins, thereby accelerating membrane permeability endotoxemia, inflammation, and intestinal tumorigenesis.

커넥신 세포막채널을 이용한 씨엠티엑스 돌연변이체의 분석 (Analysis of CMTX Mutants Using Connexin Membrane Channels)

  • 천미색;오승훈
    • 생명과학회지
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    • 제18권6호
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    • pp.764-769
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    • 2008
  • 커넥신(connexin) 32 유전자의 돌연변이가 씨엠티엑스(CMTX, X-linked Charcot-Marie-Tooth) 질환과 관련이 있다. 현재까지 300여개 이상의 돌연변이가 보고가 되었으나 이 질환에 대한 상세한 분자병리학적 원인을 거의 알려져 있지 않고 있다. 여러 연구를 통해서 커넥신 세포막채널이 간극결합채널이 갖고 있는 대부분의 생물리학적 특성을 갖고 있는 것으로 판명되었다. 이번 연구에서는 씨엠티엑스 질환과 관련된 두 개의 돌연변이체를 선정하여 간극결합채녈 대신 돌연변이체로 구성된 커넥신 세포막채널을 이용하여 단일채널수준에서 이들 돌연변이체의 특성을 조사하였다. M34T 돌연변이 세포막채널의 생물리학적 특성은 이들로 구성된 돌연변이 간극결합채널의 특성과 거의 유사하였다. 더욱이, 돌연변이 세포막채널을 이용한 연구를 통해서 간극결합채널을 이용한 연구에서는 밝혀지지 않았던 개폐극성의 역전, 빠른 개폐의 소실과 느린 개폐의 생성과 같은 새로운 사실을 알게 되었다. T86C 돌연변이 세포막채널 또한 이의 모체가 되는 커넥신 32 세포막채널과 유사한 특성을 갖고 있음을 알게 되었다. 이상의 결과를 통해서 커넥신 세포막을 이용한 연구가 씨엠티엑스 질환의 돌연변이체를 연구하는데 매우 유용할 것으로 생각된다.

제노푸스 Cx38 세포막채널의 단일채널분석 (Single Channel Analysis of Xenopus Connexin 38 Hemichannel)

  • 천미색;오승훈
    • 생명과학회지
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    • 제17권11호
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    • pp.1517-1522
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    • 2007
  • 간극결합(intercellular channel)은 인접하는 두 세포사이에 형성된 이온채널이며 이를 통해서 각종 이온, 이차 신호전달물질, 그리고 1 kDa 미만의 대사물질들이 통과한다. 아울러, sodium 혹은 potassium 이온채널처럼 반쪽의 간극결합(connexon 혹은 hemichannel)도 세포막채널로서 작용을 한다. 현재까지 간극결합을 구성하는 connexin (Cx) 단위체는 26종류 이상이 확인되었다. 이 가운데, Cx32, Cx38, Cx46 그리고 Cx50 만이 간극결합채널뿐만 아니라 세포막채널로서도 기능을 수행한다. Xenopus oocytes에서 connexin 38 (Cx38)이 발현하는 것으로 알려져 있지만 Cx38의 생물리학적 특성이 단일채널수준에서 연구가 진행된 경우는 없다. 이번 연구에서는 Cx38 채널의 생물리학적 특성, 즉 전압-의존적 개폐와 투과성(전기전도도와 이온선택성)을 알아보고자 단일채널기록을 수행하였다. Cx38 hemichannel은 전압-의존적인 빠른 개폐와 느린 개폐의 특성을 보였다. 양성전압 환경에서는 Cx38 채널이 낮은 열릴 확률(open probability)로 빠른 개폐가 유도된 반면, 음성전압에서는 느린 개폐가 높은 열릴 확률로 유도되었다. bi-ionic 실험을 통하여, Cx38 채널은 양이온보다 음이온을 더 선택 적으로 통과시킨다는 점을 알게 되었다. Cx38의 아미노산서열을 살펴보면, 아미노말단부위에 전하를 띠는 5개의 아미노산 잔기가 존재한다. 앞으로 이들 잔기를 치환시킨 돌연변이 Cx38 채널을 이용하여 과연 이들 아미노산 부위가 전압-의존적 개폐와 투과성에 관여하는 지 여부를 조사하는 연구는 매우 흥미로운 결과를 도출할 것으로 기대한다.