• 제목/요약/키워드: gap junction

검색결과 171건 처리시간 0.03초

Comparison of Drain-Induced-Barrier-Lowering (DIBL) Effect by Different Drain Engineering

  • Choi, Byoung-Seon;Choi, Pyung-Ho;Choi, Byoung-Deog
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.342-343
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    • 2012
  • We studied the Drain-Induced-Barrier-Lowering (DIBL) effect by different drain engineering. One other drain engineering is symmetric source-drain n-channel MOSFETs (SSD NMOSs), the other drain engineering is asymmetric source-drain n-channel MOSFETs (ASD NMOSs). Devices were fabricated using state of art 40 nm dynamic-random-access-memory (DRAM) technology. These devices have different modes which are deep drain junction mode in SSD NMOSs and shallow drain junction mode in ASD NMOSs. The shallow drain junction mode means that drain is only Lightly-Doped-Drain (LDD). The deep drain junction mode means that drain have same process with source. The threshold voltage gap between low drain voltage ($V_D$=0.05V) and high drain voltage ($V_D$=3V) is 0.088V in shallow drain junction mode and 0.615V in deep drain junction mode at $0.16{\mu}m$ of gate length. The DIBL coefficients are 26.5 mV/V in shallow drain junction mode and 205.7 mV/V in deep drain junction mode. These experimental results present that DIBL effect is higher in deep drain junction mode than shallow drain junction mode. These results are caused that ASD NMOSs have low drain doping level and low lateral electric field.

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갭전압에서 나타난 Nb/Al-Al$O_{x}$/Nb 터널 접합의 전압 요동 현상 (Voltage Fluctuation of a Nb/Al-Al$O_{x}$/Nb Tunnel Junction Observed at the Gap Voltage)

  • 홍현권;김규태;박세일;김구현;남두우
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2002년도 학술대회 논문집
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    • pp.123-126
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    • 2002
  • Samples of Nb/Al-Al$O_{x}$/Nb tunnel junction with the size of 50$\mu$m $\times$ 50$\mu$m were fabricated by employing self-aligning and reactive ion etching technique. In the samples with high-quality, $V_{m}$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density $J_{c}$ = 500 A/$cm^{2}$ and $V_{g}$ value (the gap voltage) was 2.8 mV. In the higher $J_{c}$, voltage fluctuation in the current rising at the gap voltage was observed. The $V_{m}$ and $J_{c}$ value were 8 mV and 900 A/$cm^{2}$, respectively.

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Antimutagenic and Anticarcinogenic Effect of Methanol Extracts of Sweetpotato (Ipomea batata) Leaves

  • Kang, Hwan-Goo;Jeong, Sang-Hee;Cho, Joon-Hyoung
    • Toxicological Research
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    • 제26권1호
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    • pp.29-35
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    • 2010
  • The present study was conducted to investigate the antimutagenic potential of the methanolic extract from the leaves of sweet potato (Ipomea batatas, IB) with the SOS chromotest (umu test) and Salmonella typhimurium TA 98 and TA 100. The anticarcinogenic effects were also studied by calculation of the $IC_{50}$ on human cancer cell lines and investigating the function of gap junction in rat liver epithelial cells. The IB extract inhibited dose-dependently the ${\beta}$-galactosidase activity induced spontaneously at concentration of more than 200 mg/ml in S. typhimurium TA 1535/pSK 1002, and decreased significantly (p < 0.01) the ${\beta}$-galactosidase activities induced by mutagen 6-chloro-9-[3-(2-chloroethylamino)proylamino]-2-methoxyacridine dihydrochloride (ICR) at dose of more than 0.4 mg/0.1 ml. The IB extract showed no effect on the spontaneous reversions of S. typhimurium TA 98 and 100 but benzo(${\alpha}$)pyrene (BaP)-stimulated reversions were decreased dose-dependently (p < 0.01) at the concentration of more than 100 mg/ml. The $IC_{50}$ value of stomach cancer cells was lower than that of normal rat liver epithelial cells, but the values of colon and uterine cancer cell lines were similar to those of normal rat liver epithelial cells. The transfer of dye through gap junctions was not affected by treatment of the IB extracts at any concentration during treatment periods. The simultaneously treatment of IB extract and 12-O-tetradecanoylphorbol-13-acetate (TPA) effectively prevented the inhibition of dye transfer induced by TPA 1 hour after treatment at all exposed concentrations. The number of gap junctions was significantly (p < 0.01) increased by the treatment with IB extract at concentrations of more than 40 ${\mu}g$/ml. The inhibition of the expression of gap junction proteins by TPA (0.01 ${\mu}g$/ml) was recovered dose dependently by the simultaneous treatment of IB extracts. Our data suggest that Ipomea batatas has antimutagenic and anticarcionogenic activity in vitro.

Computer-simulation with Different Types of Bandgap Profiling for Amorphous Silicon Germanium Thin Films Solar Cells

  • 조재현;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.320-320
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    • 2014
  • Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

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소르빈산 칼륨의 GJIC 억제로 인한 간독성 유발 (Inhibition of Gap Junctional Intercellular Communication by Food Preservatives Potassium Sorbate)

  • 황재웅;정지혜;정지원;정지윤;김선중;박정란;안지윤;하태열;김성란;이영순;강경선
    • 한국식품위생안전성학회지
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    • 제21권4호
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    • pp.269-273
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    • 2006
  • 소르빈산 칼륨은 소르빈산의 일종으로 항세균 및 곰팡이 발육 저지 효과를 갖고 있다. 이러한 성질로 인하여 소르빈산 칼륨은 곰팡이와 진균에 대한 식품 방부제로서 사용되고 있다. 소르빈산 칼륨은 많은 양에 노출되었을 때도 체내에서 수분과 이산화탄소로 분해되는 특성으로 인하여 독성이 없는 것으로 알려져 있다. gap junction을 통한 세포 간 신호 전달(GJIC)는 생체의 성장과 분화에 있어서 조직의 항상성 유지에 본질적인 역할을 하고 있다. 본 연구는 WB-F344 랫드의 정상 간 상피 세포(WB 세포)에서 소르빈산 칼륨을 노출하였을 때 GJIC에 대하여 어떤 영향을 미치는지 알아보았다. 그 결과 소르빈산 칼륨에 노출에 의하여 WB세포의 GJIC가 농도 및 시간 의존적으로 현격하게 감소하는 것을 관찰하였다. 소르빈산 칼륨은 GJIC를 강력하게 억제하며, 이는 WB 세포에서 gap junction을 구성하는 connexin 43의 인산화와 병행하는 것을 확인하였다. 소르빈산 칼륨이 gap junction의 기능을 방해함으로 인해 소르빈산 칼륨에 의한 간독성이 유발될 수 있을 것이다.

Conductance of a Single Molecule Junction Formed with Ni, Au, and Ag Electrodes

  • Kim, Taekyeong
    • 대한화학회지
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    • 제58권6호
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    • pp.513-516
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    • 2014
  • We measure the conductance of a 4,4'-diaminobiphenyl formed with Ni electrodes using a scanning tunneling microscope-based break-junction technique. For comparison, we use Au or Ag electrodes to form a metal-molecular junction. For molecules that conduct through the highest occupied molecular orbital, junctions formed with Ni show similar conductance as Au and are more conductive than those formed with Ag, consistent with the higher work function for Ni or Au. Furthermore, we observe that the measured molecular junction length that is formed with the Ni or Au electrodes was shorter than that formed with the Ag electrodes. These observations are attributed to a larger gap distance of the Ni or Au electrodes compared to that of the Ag electrodes after the metal contact ruptures. Since our work allows us to measure the conductance of a molecule formed with various electrodes, it should be relevant to molecular electronics with versatile materials.

랫드의 실험적 간암 발생과정과 Gap Junction을 통한 세포간 정보전달에서 Pueraia mirfica의 효과 (Effects of Pueraia mirifica on the Experimental Hepatocarcinogenesis in Rats and Gap Junctional Intercellular Communication)

  • 강경선;김경배;이재해;조성대;조종호;박준석;안남식;양세란;정지원
    • 한국식품위생안전성학회지
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    • 제16권3호
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    • pp.212-220
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    • 2001
  • 본 연구는 비수술적 중기 발암성 모델과 gap junction intercellular communication(GJIC)수식을 이용하여 태국에서 회춘약으로 알려진 Pueraria mirfica (Kawo Keur)식물의 항암 및 발암성 유무의 관계를 알아보기 위해 실시했다. 비수술적 중기 발암성 모델 시험의 경우, Pueraria mirifica 식물이 수컷 F344 랫드에 대하여 전암 병변의 발달에 어떠한 영향을 미치는지를 알기 위한 것으로 GST-p양성 병소의 수와 면적을 측정하여 그 수식 효과를 알아보았다. 6주령의 수컷 F344 랫트를 10 개군으로 나누어 간암을 유발하기 위하여 모든 동물에 대하여 시험 시작일에 200 mg/kg의 DEN을 투여하였고, 2주와 5주 말에 각각 300mg/kg의 DGA를 복강 투여하였다. 3군에서 6군까지에 대해서는 sodium phenobarbital을 0.05%의 농도로 음수 투여하였으며, 2군에 대해서는 발암유발 후의 6주 동안 AIN-76A에 10mg/kg의 PM 혼합 사료를, 6군은 시험 전 기간에 걸쳐 8주 동안 10mg/kg의 PM 혼합사료를 급여한 군이다. 또한, 7, 8, 9 및 10군은 2, 4, 5 및 6군과 같은 방법으로 1000mg/kg의 PM을 투여한 군으로 모든 동물은 DEN 투여 후 8주 째에 부검하였다. GST-p 면역염색 결과 양성 병소의 면적과 수에서 10mg/kg의 PM을 투여한 군들은 대조군과 비교시 유의한 차이가 나타나지 않았고, 1000mg/kg의 PM을 투여한 7, 8, 9 및 10군에서도 GST-p 양성 병소의 수와 면적에서 대조군과 비교해 보았을 때 유의한 차이를 관찰할 수 없었다. 또한 PM이 gap junction intercellular communication (GJIC)수식에 어떤 영향을 미치는지를 조사하기 위하여 사람 피부세포에서 SL/DT assay를 실시해 보았으나 이러한 gap junction assay에서도 PM은 GJIC에 영향을 주지 않았다. 이상의 결과를 종합하여 볼 때 Pueraria mirifica는 랫드에서의 실험적 간암 발생과정과 human keratinocyte에 gap junction intercellular communication에서 수식 효과를 가지고 있지 않는 것으로 보아 항암 및 발암성 여부와 관련이 없는 것으로 사료된다.

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Role of Gap Junctions in the Endothelium-Dependent Hyperpolarization of Vascular Smooth Muscle Cells

  • Yamamoto, Yoshimichi;Klemm, Megan F.;Hashitani, Hikaru;Lang, Richard J.;Soji, Tsuyoshi;Suzuki, Hikaru
    • The Korean Journal of Physiology and Pharmacology
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    • 제5권1호
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    • pp.1-8
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    • 2001
  • Hyperpolarization of arterial smooth muscle by acetylcholine is considered to be produced by the release of an unidentified chemical substance, an endothelium-derived hyperpolarizing factor (EDHF). Several chemicals have been proposed as the candidate for EDHF. However, none of them fulfil completely the nature and property of EDHF. Ultrastructural observation with electron microscope reveals that in some arteries, gap junctions are formed between endothelial and smooth muscle cells. In small arterioles, injection of gap junction permeable dyes into an endothelial cell results in a distribution of the dye to surrounding cells including smooth muscle cells. These observations allow the speculation that myoendothelial gap junctions may have a functional significance. Simultaneous measurement of the electrical responses in both endothelial and smooth muscle cells using the double patch clamp method demonstrates that these two cell types are indeed electrically coupled, indicating that they behave as a functional syncytium. The EDHF-induced hyperpolarization is produced by an activation of $Ca^{2+}-sensitive\;K^+-channels$ that are inhibited by charybdotoxin and apamin. Agonists that release EDHF increase $[Ca^{2+}]_i$ in endothelial cells but not in smooth muscle cells. Inhibition of gap junctions with chemical agents abolishes the agonist-induced hyperpolarization in smooth muscle cells but not in endothelial cells. All these observations can be explained if EDHF is an electrotonic signal propagating from endothelium to smooth muscle cells through gap junctions.

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Study of the Energy Level Alignment of Organic Materials' Planar Junction Prepared by Electrospray Vacuum Deposition

  • 김지훈;홍종암;서재원;권대견;맹민재;박용섭
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.235-235
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    • 2012
  • We investigated the energy levels of valence region at the planar junction of poly (3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) using ultraviolet photoemission spectroscopy (UPS) with ultra high vacuum. These are the most widely used materials for bulk heterojunction (BHJ) organic solar cells due to their high efficiency. In order to make the planar junction, we carried out the electrospray vacuum deposition (EVD) of PCBM onto spin-coated P3HT in high vacuum conditions (${\sim}10^{-5}-10^{-6}$). The planar junction interface exhibited 0.71 eV for the offset between P3HT HOMO and PCBM LUMO, which is different from the gap (0.85 eV) of individual values and is closer to the open circuit voltage of solar cells fabricated with the same material combination.

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기판 냉각과 비냉각으로 제작된 $Nb/Al-Al_2O_3/Nb$ 조셉슨 접합 어레이의 특성 (Characterization of $Nb/Al-Al_2O_3/Nb$ Josephson junction arrays fabricated With and Without cooling substrate)

  • 홍현권;김규태;박세일;이기영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1402-1404
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    • 2001
  • Josephson junction arrays of the type $Nb/Al-Al_2O_3/Nb$ were prepared by DC magnetron sputtering. The tunnel barrier was formed by in-situ thermal oxidation. Individual junctions were defined using selective niobium etching process(SNEP). The characteristic curves of Josephson junction arrays fabricated with and without cooling the substrate were represented. The junctions deposited without cooling showed poor characteristics(high leakage current, low gap voltage), and a high quality Josephson junction array of 2,000 junctions with high hysteresis was obtained with cooling and when operated at 74.6 GHz, it generated stable quantized voltage steps up to 2.2 V.

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