Characterization of $Nb/Al-Al_2O_3/Nb$ Josephson junction arrays fabricated With and Without cooling substrate

기판 냉각과 비냉각으로 제작된 $Nb/Al-Al_2O_3/Nb$ 조셉슨 접합 어레이의 특성

  • Hong, Hyun-Kwon (Department of Electronic Engineering, Chungbuk National University) ;
  • Kim, Kyu-Tae (Korea Research Institute of Standards and Science, Electric Lab.) ;
  • Park, Se-Il (Korea Research Institute of Standards and Science, Electric Lab.) ;
  • Lee, Kie-Young (Department of Electronic Engineering, Chungbuk National University)
  • Published : 2001.07.18

Abstract

Josephson junction arrays of the type $Nb/Al-Al_2O_3/Nb$ were prepared by DC magnetron sputtering. The tunnel barrier was formed by in-situ thermal oxidation. Individual junctions were defined using selective niobium etching process(SNEP). The characteristic curves of Josephson junction arrays fabricated with and without cooling the substrate were represented. The junctions deposited without cooling showed poor characteristics(high leakage current, low gap voltage), and a high quality Josephson junction array of 2,000 junctions with high hysteresis was obtained with cooling and when operated at 74.6 GHz, it generated stable quantized voltage steps up to 2.2 V.

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