• Journal of electromagnetic engineering and science
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• v.12 no.1
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• pp.101-106
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• 2012

In this study, we investigated the effect of groove pattern and gap-fill with lossy materials at 15 GHz frequency of Ku-band. We used Epoxy/MWCNT composite materials as gap-fill materials. Although epoxy does not have an absorbance capability, epoxy added conductive fillers, which are multi-walled carbon nanotubes (MWCNT), can function as radar absorbing material. Specimens were fabricated with different MWCNT mass fractions (0, 0.5, 1.0, 2.0 wt%) and their permittivity in the Ku-band was measured using the waveguide technique. We investigated the effect of gap-fill on monostatic RCS by calculating RCS with and without gap-fill. For arbitrarily chosen thickness and experimentally obtained relative permittivity, we chose the relative permittivity of MWCNT at 2 wt% (${\varepsilon}_r$=8.8-j2.4), which was the lowest reflection coefficient for given thickness of 3.3 mm at V-pol. and $80^{\circ}$ incident angle. We also checked the monostatic RCS and the field intensity inside the groove channel. In the case of H-pol, gap-fill was not affected by the monostatic RCS and magnitude was similar with or without gap-fill. However, in the case of V-pol, gap-fill effectively reduced the monostatic RCS. The field intensity inside the groove channel reveals that different RCS behaviors depend on the wave polarizations.

• Journal of the Korean institute of surface engineering
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• v.53 no.3
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• pp.124-129
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• 2020

This study is for the development of high temperature ALD SiO₂ film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N₂and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.

• Tunnel and Underground Space
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• v.24 no.6
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• pp.405-417
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• 2014

In a high-level waste repository, the gap fill of the engineered barrier is an important component that influences the performance of the buffer and backfill. This paper reviewed the overseas status of R&D on the gap fill used engineered barriers, through which the concept of the gap fill, manufacturing techniques, pellet-molding characteristics, and emplacement techniques were summarized. The concept of a gap fill differs for each country depending on its disposal type and concept. Bentonite has been considered a major material of a gap fill, and clay as an inert filler. Gap fill was used in the form of pellets, granules, or a pellet-granule blend. Pellets are manufactured through one of the following techniques: static compaction, roller compression, or extrusion-cutting. Among these techniques, countries have focused on developing advanced technologies of roller compression and extrusion-cutting techniques for industrial pellet production. The dry density and integrity of the pellet are sensitive to water content, constituent material, manufacturing technique, and pellet size, and are less sensitive to the pressure applied during the manufacturing. For the emplacement of the gap fill, pouring, pouring and tamping, and pouring with vibration techniques were used in the buffer gap of the vertical deposition hole; blowing through the use of shotcrete technology and auger placement and compaction techniques have been used in the gap of horizontal deposition hole and tunnel. However, these emplacement techniques are still technically at the beginning stage, and thus additional research and development are expected to be needed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.93-94
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• 2005

Cu metallization using electrochemical plating(ECP) has played an important role in back end of line(BEOL) interconnect formation. In this work, we studied the optimized copper thickness using Bottom-up Gap-fill in Cu ECP, which is closely related with the pattern dependencies in Cu ECP and Cu dual damascene process at 0.13 ${\mu}m$ technology node. In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge, Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness.

• Korean Journal of Materials Research
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• v.26 no.9
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• pp.455-459
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• 2016

The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.249-249
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• 2010

The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.1-4
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• 2002

As the application of semiconductor chips into electronics increases, it requires more complete integration, which results in higher performance. And it needs minimization in device design for cost saving of manufacture. Therefore oxide gap fill has become one of the major issues in sub-micron devices. Currently HDP (High-Density Plasma) CVD system is widely used in IMD (Inter Metal Dielectric) to fill narrower space between metal lines. However, HDP-CVD system has some potential problems such as plasma charging damage, metal damage and etc. Therefore, we will introduce about one of via resistance failure by metal damage and a preventive method in this paper.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.151-152
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• 2007

최근들어 Device 크기가 100nm 이하로 줄어듦에 따라 High Density Plasma Chemical Vapor Deposition(HDP-CVD) 기술로는 100nm 이하의 gap에 Aspect ratio가 6:1 이상 되는 STI(Shallow Trench Isolation) 구조를 Void 없이 채우는 것이 불가능해 지고 있다. 이를 극복하기 위하여 여러 방면으로 연구가 수행되어지고 있다. 그 방법 중의 하나인 Dep/Etch/Dep Cycle이 이번 연구에서 사용되었으며, 일반적인 HDP CVD보다 더 낮은 압력에서 증착과 식각이 수행되었다. 그 결과 다른 여러 방법들보다 좋은 막질을 얻을 수 있었으며, Gap fill 성능을 향상 시킬 수 있었다.