• 대한화학회지
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• 제7권1호
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• pp.65-68
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• 1963

The solubility of ethyl bromide in nitrobenzene and in 1,2,4-trichlorobenzene has been measured at $19^{\circ}$ in the presence and absence of gallium bromide. When gallium bromide does not exist in the system, the solubility of ethyl bromide in nitrobenzene is greater than in 1,2,4-trichlorobenzene, indicating the stronger interaction of ethyl bromide with nitrobenzene than with 1,2,4-trichlorobenzene. When there exists gallium bromide in the system, an unstable 1: 1 complex, C2H5Br·GaBr3, of gallium bromide with ethyl bromide is formed in the solution. The 1: 1 complex in solution dissociates into the components to a large extent according to one of the following equilibria or both: $C_2H_5Br{\cdot}GaBr_3{\rightleftarrows}C_2H_5Br+GaBr_3$C_2H_5Br{\cdot}GaBr_3{\rightleftarrows}C_2H_5Br+1}2GaBr_3$$ The stability of the 1: 1 complex of ethyl bromide with gallium bromide is compared with that of the corresponding complex of methyl bromide.

• Bulletin of the Korean Chemical Society
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• 제26권1호
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• pp.131-135
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• 2005

Gallium nitride (GaN) powders and nanowires were prepared by using tris(N,N-dimethyldithiocarbamato)gallium(III) (Ga(DmDTC)$_3$) and tris(N,N-diethyldithiocarbamato)gallium(III) (Ga(DeDTC)$_3$) as new precursors. The GaN powders were obtained by reaction of the complexes with ammonia in the temperature ranging from 500 to 1100 ${^{\circ}C}$. The process of conversion of the complexes to GaN was monitored by their weight loss, XRD, and $^{71}$Ga magic-angle spinning (MAS) NMR spectroscopy. Most likely the complexes decompose to $\gamma$ -Ga$_2$S$_3$ and then turn into GaN via amorphous gallium thionitrides (GaS$_x$N$_y$). The reactivity of Ga(DmDTC)$_3$ with ammonia was a little higher than that of Ga(DeDTC)$_3$. Room-temperature photoluminescence spectra of asprepared GaN powders exhibited the band-edge emission of GaN at 363 nm. GaN nanowires were obtained by nitridation of as-ground $\gamma$ -Ga$_2$S$_3$ powders to GaN powders, followed by sublimation without using templates or catalysts.

• Restorative Dentistry and Endodontics
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• 제22권2호
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• pp.575-595
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• 1997

Replacement resorption is followed by the delayed replantation of an avulsed tooth. Currently no effective treatment is substantiated for replacement resorption. The purpose of this study was to investigate the effect of stannous fluoride, bisphosphonate (etidronate disodium) and gallium nitrate, which have been shown to reduce dentin resorption, on human dentin. Osteoclasts were collected from tibeas of chick embryo. The cells were well agitated to prevent adhesion and seeded onto the sliced human dentin wafers which had been soaked in either culture media (control), or several different concentrations of stannous fluoride, etidronate disodium (l-hydroxyethylidene -1,1-bisphosphonate disodium), and gallium nitrate. Resorption was measured by counting the number of resorptive pit produced by the cells. Results are as follows. Stannous fluoride and etidronate disodium showed statistically significant reduction of dentin resorption(p<0.05) but the effect of stannous fluoride seemed to be its high cytotoxicity. Etidronate disodium did not show cytotoxicities in all experimented concentrations. Gallium nitrate did not show differences in resorption either between different concentrations or from the control group.

• Bulletin of the Korean Chemical Society
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• 제25권1호
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• pp.51-54
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• 2004

Gallium nitride (GaN) powders were prepared by calcining a gallium(III) nitrate salt in flowing ammonia in the temperature ranging from 500 to 1050 $^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-ray diffraction and $^{71}Ga$ MAS (magic-angle spinning) NMR spectroscopy. The salt decomposed to ${\gamma}-Ga_2O_3$ and then converted to GaN without ${\gamma}-{\beta}Ga_2O_3$ phase transition. It is most likely that the conversion of ${\gamma}-Ga_2O_3$ to GaN does not proceed through $Ga_2O$ but stepwise via amorphous gallium oxynitride ($GaO_xN_y$) as intermediates. The GaN nanowires and microcrystals were obtained by calcining the pellet containing a mixture of ${\gamma}-Ga_2O_3$ and carbon in flowing ammonia at 900 $^{\circ}C$ for 15 h. The growth of the nanowire might be explained by the vapor-solid (VS) mechanism in a confined reactor. Room-temperature photoluminescence spectra of as-synthesized GaN powders obtained showed the emission peak at 363 nm.

• 한국수소및신에너지학회논문집
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• 제29권6호
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• pp.627-634
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• 2018

Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

• 자원리싸이클링
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• 제29권1호
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• pp.81-88
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• 2020

발광다이오드는 많은 양의 갈륨과 인듐을 함유하고 있어, 폐발광다이오드로부터 이들 원소의 회수는 최근 많은 관심을 받은 연구 분야이다. 본 연구에서는 폐발광다이오드에 포함된 질화갈륨으로부터 갈륨과 인듐을 회수하고자 시도하였다. 전체 공정은 물성분석, 알칼리배소, 침출의 세 단계로 구성되었다. 화학성분 분석결과 폐발광다이오드의 경우, 70.32% 갈륨, 5.31% 규소, 2.27% 알루미늄 및 2.07% 인듐이 함유됨을 확인하였다. 두 번째 단계인 알칼리배소 공정은 탄산나트륨과 함께, 900℃하에서 3시간의 반응이 최적 조건인 것으로 확인되었고, 이 공정을 통해 질화갈륨이 질화산화물로 변화되었다. 마지막은 침출 단계로서, 산의 종류 및 농도, 고액비, 반응시간에 따른 변화를 조사하여, 최적조건을 확립하였다. 최적조건은 반응온도 25℃ 및 2.0 M의 염산 환경에서 30 ml/g의 고액비와 반응시간 32분으로 나타났으며, 그 때의 침출 효율은 갈륨 96.88%와 인듐 96.61%로 나타났다.

• 자원리싸이클링
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• 제9권3호
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• pp.29-36
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• 2000

아연제련잔사로부터 고순도 갈륨을 회수하기 위하여 알칼리 갈륨의 용매추출실험을 수행하였다 실험결과 Isopropyl Ether에 의한 갈륨의 추출시 수용액의 염산농도가 증가할수록 갈륨의 추출이 증가하여 약 7.4M/L의 염산농도에서 증가할수록 추출이 증가하여 갈륨과 분리하기가 매우 어렵다. 그러나 D2EHPA에 의해 추출할 경우 철은 염산농도 2M/L 까지는 100% 추출되고 있으나, 갈륨은 염산농도 2M/L에서는 거의 추출이 이루어지지 않아 수용액의 염산농도를 조절함으로써 갈륨과 철을 용이하게 분리. 회수할 수 있다. 아연제련잔사로부터 알칼리침출, 중화침전, Isopropyl Ether과 D2EHPA를 사용한 용매추출공정을 거쳐 갈륨을회수한 결과, 순도 99wt%, 이상의 $Ga_2O_3{\cdot}H_2O$를 얻을 수 있었다.

• 마이크로전자및패키징학회지
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• 제29권2호
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• pp.11-18
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• 2022

최근 세계적으로 유연 전자소자 관련 기술들이 주목을 받으면서 유연소자 제작 과정에서의 성형성 및 굽힘 상태에서의 성능과 내구성 등의 문제점을 개선하기 위하여 액체 금속을 사용한 배선·접합 기술들의 개발이 요구되고 있다. 이러한 요구에 부응하여 독성이 없으면서 낮은 점도와 우수한 전기전도도를 가지는 갈륨 및 갈륨계 합금 (공정 갈륨-인듐 및 공정 갈륨-인듐-주석 등)의 액체금속을 저온 접합소재로 이용하려는 다양한 연구들이 이루어지고 있다. 본 논문에서는 갈륨 및 갈륨계 합금을 이용한 저온접합 기술의 최신 연구동향을 정리하여 소개하고자 한다. 이러한 기술들은 향후 유연 전자소자의 제조 및 전자패키지에서의 저온접합 등의 분야에서 실용화를 위한 중요한 기반기술이 될 것으로 예상된다.

• 대한전자공학회논문지
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• 제10권3호
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• pp.1-9
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• 1973

파일롯트 램프와 숫자표시를 목적으로 국내에서 처음으로 화합물반도체인 갈륨 인을 사용해서 발광다이오드를 만들었다. 이같이 만든 다이오드는 밝고 선명한 붉은 빛을 냈으며 발광하는데 필요한 순방향 바이아스 전류는 5mA 이하였다. 다이오드의 p-n 접합면은 n형 GaP 단결정 기판에 liquid phase epitaxy방법으로 성장시켰고 이때의 Ga 용액의 온도는 약 1300°K정도를 유지했다. 이렇게 하여 제조된 p-n 접합체에 wire bonding으로 ohmic contact시켜 다이오드를 제조했다. 칼륨인 발광다이오드는 매우 적은 전류로 발광되는 장점과 성장 반웅시 질소를 불순물로 doping시키면 녹색으로 발광되는 장점을 갖고 있으므로 앞으로 양산화의 전망이 매우 밝다.

• Restorative Dentistry and Endodontics
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• 제23권1호
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• pp.269-277
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• 1998

This in vitro study compared the microleakage of 4 lining conditions when used with Gallium alloy GF II and Valiant PhD. Class V cavity was prepared on both buccal and lingual surface of 80 extracted human premolar & molar teeth with one margin in enamel and another in dentin. Before restoration, prepared cavities were applied to no-liner, cavity varnish, Scotchbond multipurpose, and Superbond D-liner II plus according to manufacture's instructions. The restored teeth were stored in saline for 1 week, then thermocycled for 100 times, stained with 0.5% basic fuchsin dye for 1 day, sectioned, and observed using a light microscope. Following results were obtained. 1. The leakage value of Superbond-lined group showed significantly lower than that of nolined group on both margins of Valiant PhD(p<0.05). 2; There was no significant difference between the 4 lining conditions in Gallium alloy GF II (p>0.05). 3. When We make a comparison between Gallium alloy GF II and Valiant PhD under same lining conditions, the microleakage value of Gallium alloy GF II showed lower than that of Valiant PhD on occlusal & gingival margin(p<0.05) except for Superbond-lined group(p>0.05).