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http://dx.doi.org/10.6117/kmeps.2022.29.2.011

Trends of Low-temperature Bonding Technologies using Gallium and Gallium Alloys  

Hong, Teayeong (Dept. of Welding & Joining Science Engineering, Chosun University)
Shim, Horyul (Dept. of Welding & Joining Science Engineering, Chosun University)
Sohn, Yoonchul (Dept. of Welding & Joining Science Engineering, Chosun University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.29, no.2, 2022 , pp. 11-18 More about this Journal
Abstract
Recently, as flexible electronic device-related technologies have received worldwide attention, the development of wiring and bonding technologies using liquid metals is required in order to improve problems such as formability in the manufacturing process of flexible devices and performance and durability in the bending state. In response to these needs, various studies are being conducted to use gallium and gallium-based alloys (eutectic Ga-In and eutectic Ga-In-Sn, etc.) liquid metals, with low viscosity and excellent electrical conductivity without toxicity, as low-temperature bonding materials. In this paper, the latest research trends of low-temperature bonding technology using gallium and gallium-based alloys are summarized and introduced. These technologies are expected to become important base technologies for practical use in the fields of manufacturing flexible electronic devices and low-temperature bonding in microelectronic packages in the future.
Keywords
flexible electronics; gallium; liquid metal; packaging; soldering;
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1 S. Liu, S. McDonald, and Q. Gu et al. "Properties of CuGa2 Formed Between Liquid Ga and Cu Substrates at Room Temperature", J. Electron. Mater., 49, 128-139 (2020).   DOI
2 J. H. So, J. Thelen, A. Qusba, G. J. Hayes, G. Lazzi, and M. D. Dickey, "Reversibly Deformable and Mechanically Tunable Fluidic Antennas", Adv. Funct. Mater., 19, 3632-3637 (2009).   DOI
3 B. W. Kim, and Y. C. Sohn, "Analysis of intermetallic compound formation in the reactions at liquid Ga/solid Pd interface", Surf. Interfaces, 30, 101951 (2022).   DOI
4 H. Choi, and Y. C. Sohn, "Interfacial reactions between liquid Ga and solid Au", submitted.
5 H. Kolb, R. Sottong, T. Dasgupta et al. "Evaluation of Detachable Ga-Based Solder Contacts for Thermoelectric Materials", J. Electron. Mater., 46, 5057-5063 (2017).   DOI
6 J. B. Li, L. N. Ji, J. K. Liang, Y. Zhang, J. Luo, C. R. Li, and G. H. Rao, "A thermodynamic assessment of the copper-gallium system", Calphad., 32(2), 447-453 (2008).   DOI
7 J. S. Wang, S. Jin, W. J. Zhu, H. Dong, X. Tao, H. Liu, and Z. P. Jin, "First-principles calculations assisted thermodynamic assessment of the Pt-Ga-Ge ternary system", Calphad., 33, 561-569 (2009).   DOI
8 Z. Marinkovic, and V. Simic, "Comparative analysis of inter-diffusion in some thin film metal couples at room temperature", Thin Solid Films, 217(1-2), 26-30 (1992).   DOI
9 M. W. M. Jones, N. W. Phillips, G. A. van Riessen, B. Abbey, D. J. Vine, Y. S. G. Nashed, S. T. Mudie, N. Afshar, R. Kirkham, B. Chen, E. Balaur, and M. D. de Jonge, "Simultaneous X-ray fluorescence and scanning X-ray diffraction microscopy at the Australian Synchrotron XFM beamline", J. Synchrotron Radiat., 23, 1151-1157 (2016).   DOI
10 J. Froemel, M. Baum, M. Wiemer, and T. Gessner, "Low-Temperature Wafer Bonding Using Solid-Liquid Inter-Diffusion Mechanism", J. Microelectromech. Syst., 24, 1973-1980 (2015).   DOI
11 S. Liu, D. Qu, S. McDonald, and K. Nogita, "The Interaction of Sn-Ga Alloys and Au Coated Cu Substrates", Solid State Phenomena., 273, 3-8 (2018).   DOI
12 D. Zrnic, and D. S. Swatik, "On the resistivity and surface tension of the eutectic alloy of gallium and indium", Journal of The Less Common Metals., 18, 67-68 (1969).   DOI
13 S. Liu, K. Sweatman, S. McDonald, and K. Nogita, "Ga-Based Alloys in Microelectronic Interconnects: A Review", Materials (Basel).,11(8), 13-84 (2018).
14 D. Zrnic, and D. S. Swatik, "On the resistivity and surface tension of the eutectic alloy of gallium and indium", Journal of The Less Common Metals., 18, 67-68 (1969).   DOI
15 M. D. Dickey, R. C. Chiechi, R. J. Larsen, E. A. Weiss, D. A. Weitz, and G. M. Whitesides, "Eutectic gallium-indium (egain): A liquid metal alloy for the formation of stable structures in microchannels at room temperature", Advanced Functional Materials., 18(7), 1097-1104 (2008).   DOI
16 S. Liu, X. F. Tan, Stuart D. McDonald, Q. F. Gu, S. Matsumura, and K. Nogita, "Interfacial reactions between Ga and Cu-xNi (x=0, 2, 6, 10, 14) substrates and the strength of Cu-xNi/Ga/Cu-xNi joints", Intermetallics., 133, 107168 (2021).   DOI
17 Y. Cui, F. Liang, Z. Yang, S. Xu, X. Zhao, Y. Ding, Z. Lin, and J. Liu, "Metallic Bond-Enabled Wetting Behavior at the Liquid Ga/CuGa2 Interfaces", ACS Appl. Mater. Interfaces., 10, 9203- 9210 (2018).   DOI
18 T. Liu, P. Sen, and C. J. Kim, "Characterization of Nontoxic Liquid-Metal Alloy Galinstan for Applications in Microdevices", Journal of Microelectromechanical Systems., 21(2), 443-450 (2011).
19 S. Liu, W. Yang, Y. Kawami, Q. Gu, S. Matsumura, D. Qu, S. McDonald, and K. Nogita, "Effects of Ni and Cu Antisite Substitution on the Phase Stability of CuGa2 from Liquid Ga/Cu-Ni Interfacial Reaction", ACS Appl. Mater. Interfaces., 11, 35, 32523-32532 (2019).   DOI
20 D. Morales, N. A. Stoute, Z. Yu, D.E. Aspnes, and M. D. Dickey, "Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides", Appl. Phys. Lett., 109, 091905 (2016).   DOI
21 T. S. Yoon, and T. S. Kim, "Thermo-Mechanical Reliability of TSV based 3D-IC", J. Microelectron. Packag. Soc., 24(1), 35-43 (2017).   DOI
22 M. Motoyoshi, "Through-Silicon Via (TSV)", Proc. IEEE., 97(1), 43 (2009).   DOI
23 S. Liu, D. Qu, S. McDonald, Q. Gu, S. Matsumura, and K. Nogita, "Intermetallic formation mechanisms and properties in room-temperature Ga soldering", Journal of Alloys and Compounds., 826, 154221 (2020).   DOI
24 S. K. Lin, C. L. Cho, and H. M. Chang, "Interfacial Reactions in Cu/Ga and Cu/Ga/Cu Couples", J. Electron. Mater., 43, 204-211 (2014).   DOI
25 S. K. Lin, H. M. Chang, C. L. Cho, Y. C. Liu, and Y. K. Kuo, "Formation of Solid-Solution Cu-to-Cu Joints Using Ga Solder and Pt under Bump Metallurgy for Three-Dimensional Integrated Circuits", Electron. Mater. Lett., 11(4), 687-694 (2015).   DOI
26 D. Y. Lee, C. L. Kim, and Y. C. Sohn, "Formation and Growth of Intermetallic Compounds during Reactions between Liquid Gallium and Solid Nickel", Materials, 14, 5694 (2021).   DOI
27 M. D. Dickey, "Emerging applications of liquid metals featuring surface oxides.", ACS applied materials & interfaces, 6(21), 18369-18379 (2014).   DOI
28 J. Tang, X. Zhao, J. Li, R. Guo, Y. Zhou, and J. Liu, "Gallium-Based Liquid Metal Amalgams: Transitional-State Metallic Mixtures (TransM2ixes) with Enhanced and Tunable Electrical, Thermal, and Mechanical Properties", ACS Appl. Mater. Interfaces., 9(41), 35977-35987 (2017).   DOI
29 P. J. Geddis, L. Wu, A. M. McDonald, S. W. S. Chen, and B. R. Clements, "The Effect of Static Liquid Galinstan on Common Metals and Non-Metals at Temperatures up to 200 ℃", Canadian Journal of Chemistry., 98(12), 787-798 (2020).   DOI
30 M. D. Dickey, R. C. Chiechi, R. J. Larsen, E. A. Weiss, D. A. Weitz, and G. M. Whitesides, "Eutectic Gallium-Indium (EGaIn): A Liquid Metal Alloy for the Formation of Stable Structures in Microchannels at Room Temperature", Adv. Funct. Mater., 18(7), 1097-1104. (2008).   DOI