• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.1
• /
• pp.12-17
• /
• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• Applied Science and Convergence Technology
• /
• v.27 no.5
• /
• pp.109-112
• /
• 2018

Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity ($I_{ex}$)- and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the $I_{ex}$ dependence show that the PL intensities increase with increasing $I_{ex}$. The enhancement factors (k) of PL increment as a function of $I_{ex}$ are 3.3 and 1.22 at low and high $I_{ex}$ regime, respectively. The high k value at low $I_{ex}$, implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.

• The Journal of Korean Society for Radiation Therapy
• /
• v.20 no.2
• /
• pp.109-113
• /
• 2008

Purpose: To evaluate the detector dependency in the various collimator size for Stereotactic Radiosugery (SRS). Materials and Methods: This study was performed with 6 MV photon beam (Varian 21EX, Varian, US) and the measurement detectors are used by ion chamber CC01, CC13 (Wellhofer, Germany) and stereotactic diode detector (SFD, Wellhofer, Germany). SRS collimator size was used by ${\varphi}$5, 10, 20, 30 mm (Brain Lab, Germany). Percentage depth dose (PDD) was measured at SSD 100 cm and field size 10×10 cm from individual detectors. Ouput factor was measured by using same setup of PDD and with maximum dose depth. Data was normalized at field size $10{\times}10\;cm$. Beam profile was measured at SSD 100 cm in SRS collimator ${\varphi}$10, 30 mm and field $10{\times}10\;cm$ and a comparison of FWHM (full width half maximum), penumbra width (20~80%). Results: The CC13 detector was overestimated 16% than other detectors from the PDD in the 5 mm collimator. Output factors were underestimated CC01 28%, CC13 72% in the 5 mm collimator and CC01 9.6%, CC13 25% in the 10 mm collimator than the SFD. Maximum difference was 3% at the FWHM of the dose profile in the 10 mm collimator and difference of the 30 mm collimator was 0% at the FWHM. Penumbra width was increased CC01 122%, CC13 194% in the 10 mm collimator and CC01 68%, CC13 185% in the 30 mm collimator than the SFD. Conclusion: It is very important for accurate dosimetry to select a detector in small field. The SFD was considered with the most accurate dosimeter for small collimator dosimetry in this study.

• Journal of Radiation Protection and Research
• /
• v.43 no.1
• /
• pp.10-19
• /
• 2018

Background: Monte Carlo (MC) simulation is the most accurate for calculating radiation dose distribution and determining patient dose. In MC simulations of the therapeutic accelerator, the characteristics of the initial electron must be precisely determined in order to achieve accurate simulations. However, It has been computation-, labor-, and time-intensive to predict the beam characteristics through predominantly empirical approach. The aim of this study was to analyze the relationships between electron beam parameters and dose distribution, with the goal of simplifying the MC commissioning process. Materials and Methods: The Varian Clinac 2300 IX machine was modeled with the Geant4 MC-toolkit. The percent depth dose (PDD) and lateral beam profiles were assessed according to initial electron beam parameters of mean energy, radial intensity distribution, and energy distribution. Results and Discussion: The PDD values increased on average by 4.36% when the mean energy increased from 5.6 MeV to 6.4 MeV. The PDD was also increased by 2.77% when the energy spread increased from 0 MeV to 1.019 MeV. In the lateral dose profile, increasing the beam radial width from 0 mm to 4 mm at the full width at half maximum resulted in a dose decrease of 8.42% on the average. The profile also decreased by 4.81% when the mean energy was increased from 5.6 MeV to 6.4 MeV. Of all tested parameters, electron mean energy had the greatest influence on dose distribution. The PDD and profile were calculated using parameters optimized and compared with the golden beam data. The maximum dose difference was assessed as less than 2%. Conclusion: The relationship between the initial electron and treatment beam quality investigated in this study can be used in Monte Carlo commissioning of medical linear accelerator model.

• Korean Journal of Materials Research
• /
• v.12 no.11
• /
• pp.835-839
• /
• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.8
• /
• pp.575-579
• /
• 2012

Heteroepitaxial InP films have been grown on GaAs substrates to study the effects of the nucleation layer's surface roughness on the epitaxial layer's quality. For this, InP nucleation layers were grown at $400^{\circ}C$ with various ethyldimethylindium (EDMIn) flow rates and durations of growth, annealed at $6200^{\circ}C$ for 10 minutes and then InP epitaxial layers were grown at $550^{\circ}C$. It has been found that the nucleation layer's surface roughness is a critical factor on the epitaxial layer's quality. When a nucleation layer is grown with an EDMIn flow rate of 2.3 ${\mu}mole/min$ for 12 minutes, the surface roughness of the nucleation layer is minimum and the successively grown epitaxial layer's qualities are comparable to those of the homoepitaxial InP layers reported. The minimum full width at half maximum of InP (200) x-ray diffraction peak and that of near-band-edge peak from a 4.4 K photoluminescence are 60 arcmin and 6.33 meV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.1
• /
• pp.94-100
• /
• 2004

We fabricated textured Ag substrates for YBCO coated conductor and evaluated the effects of annealing temperature on microstructural evolution, texture formation, and surface morphology. Ag ingot, as an initial specimen, was prepared by plasma arc melting(PAM). Subsequently, the ingot was cold rolled to 100 ${\mu}{\textrm}{m}$ thick tape and annealed at temperatures of 600-80$0^{\circ}C$. The texture and surface morphology of the substrate were characterized by pole-figure and atomic force microscopy(AFM) profile, respectively. It was observed that a strong ｛110｝<110> texture was formed after annealing and its symmetry improved as annealing temperature increased. The full-width at half-maximum(FWHM) of ｛110｝<110> pole was as sharp as 10$^{\circ}$ for the substrate annealed at 80$0^{\circ}C$. On the other hand, it was found that the thermal grooving and faceting became remarkable as annealing temperature increased : root-mean-square(RMS) roughness of the substrate annealed at 80$0^{\circ}C$ was 39.2 nm. The substrate of strong texture and smooth surface, fabricated in our study, is considered to be suitable for use as a substrate for the epitaxial deposition of superconductor film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.7
• /
• pp.564-569
• /
• 2002

Heteroepitaxial GaN films were grown on sapphire substrates in order to study the effects of the buffer layer's surface roughness and thermal treatment on the epitaxial layer's quality. For this, GaN buffer layers were grown at $550^{\circ}C$ with various TMGa flow rates and durations of growth, and annealed at $1010^{\circ}C$ for 3 min after the temperature was raised by 23 ~ $92^{\circ}C/min$, and then GaN epitaxial layers were grown at $1000^{\circ}C$. It has been found that the buffer layer's surface roughness and the thermal treatment condition are critical factors on the quality of the epitaxial layer. When a buffer layer was frown with a TMGa flow rate of $24\mu mole/min$ for 30 sec, the surface roughness of the buffer lather was minimum and when the thermal ramping rate was $30.6^{\circ}C/min$ on this layer, the successively grown epitaxial layer's crystalline and optical qualities were optimized with a specular morphology. The minimum full width at half maximum(FWHM) of GaN(0002) x-ray diffraction peak and that of near-band-edge(NBE) peak from a room temperature photoluminescence (PL) were 5 arcmin and 9 nm, respectively.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.11
• /
• pp.3272-3278
• /
• 2010

Synthesis and structural characterization of peripherally ferrocene-substituted zinc phthalocyanine (ZnPc-Fc) were carried out for efficient far-red/near-IR performance in dye-sensitized nanostructured $TiO_2$ solar cells. Incorporating ferrocene into phthalocyanine strongly improved the dye solubility in polar organic solvents, and reduced surface aggregation due to the steric effect of bulky ferrocene substituents. The involvement of electron transfer reaction pathways between ferrocene and phthalocyanine in ZnPc-Fc was evidenced by completely quenched fluorescence from S1 state (< 0.08% vs ZnPc). Strong absorption bands at 542 and 682 nm were observed in the transient absorption spectroscopy of ZnPc-Fc in DMSO, which was excited at a 670 nm laser pulse with a 15 ps full width at half maximum. Also, the excited state absorption signals at 450 - 600 and 750 - 850 nm appeared from the formation of charge separated state of phthalocyanine's anion. The lifetime of the charge separate state in ZnPc-Fc was determined to be $170{\pm}8$ ps, which was almost 17 times shorter than that of the ZnPc.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.6
• /
• pp.185-188
• /
• 2009

The effects of the growth temperature on the properties of ZnO thin films were investigated by using X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectrophotometry, and Hall measurements. The ZnO films were deposited by rf magnetron sputtering at various growth temperatures in the range of 100-$400{^{\circ}C}$. A strong c-axis preferred orientation is observed for all of the samples. As the growth temperature increases, the crystalline orientation of the ZnO (002) plane is not changed, but the full width at half maximum gets smaller. The dependence of the electron concentration, mobility, and resistivity on the growth temperature exhibits that the ZnO films have a higher electron concentration at higher temperatures, thus giving them a low resistivity. The optical transmittance and band gap energy, calculated from the spectra of optical absorbance, show a significant dependence on the growth temperature. As for the sample grown at $100{^{\circ}C}$, the average transmittance is about 90% in the visible wavelength range and the band gap is estimated to be 3.13 eV.