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http://dx.doi.org/10.5757/ASCT.2018.27.5.109

Excitation Intensity- and Temperature-Dependent Photoluminescence Study of InAs/GaAs Sub-monolayer-Quantum Dot  

Kim, Minseak (Department of Physics, Yeungnam University)
Jo, Hyun Jun (Department of Physics, Yeungnam University)
Kim, Yeongho (Korea Research Institute of Standards and Science)
Lee, Seung Hyun (Department of Electrical and Computer Engineering, Ohio State University)
Lee, Sang Jun (Korea Research Institute of Standards and Science)
Honsberg, Christiana B. (School of Electrical, Computer and Energy Engineering, Arizona State University)
Kim, Jong Su (Department of Physics, Yeungnam University)
Publication Information
Applied Science and Convergence Technology / v.27, no.5, 2018 , pp. 109-112 More about this Journal
Abstract
Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity ($I_{ex}$)- and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the $I_{ex}$ dependence show that the PL intensities increase with increasing $I_{ex}$. The enhancement factors (k) of PL increment as a function of $I_{ex}$ are 3.3 and 1.22 at low and high $I_{ex}$ regime, respectively. The high k value at low $I_{ex}$, implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.
Keywords
PL; SML QDs; Photoluminescence; Activation enery;
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