Effects of Surface Roughness and Thermal Treatment of Buffer Layer on the Quality of GaN Epitaxial Layers
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유충현
(청주대학교 정보통신공학부)
심형관 (청주대학교 정보통신공학부) 강문성 (청주대학교 정보통신공학부) |
1 |
High electron mobility transistor based in a GaN-AIxGa₁-xN heterojunction
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DOI ScienceOn |
2 |
AlGaN/GaN heterostructure field-effect transistor model including thermal effects
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DOI ScienceOn |
3 |
Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN
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DOI |
4 |
Yellow Iuminescence in GaN
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5 |
High speed, low noise ultraviolet photo detectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
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DOI ScienceOn |
6 |
GaN계 전자소자의 연구동향
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과학기술학회마을 |
7 |
Comparative study of GaN and AIN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition
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DOI ScienceOn |
8 |
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9 |
Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers
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DOI ScienceOn |
10 |
Reduction of threading dislocations in GaN on sapphire by buffer layer annealing in low-pressure metalorganic chemical vapor deposition
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DOI |
11 |
On-wafer continuous-wave operation of InGaN/GaN violet laser diodes
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DOI ScienceOn |
12 |
GaN계 Laser Diode의 개발 기술
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과학기술학회마을 |
13 |
The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire
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DOI ScienceOn |
14 |
n+-GaN/AlGaN/GaN HFET 제작을 위한 오믹접축에 관한 연구
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과학기술학회마을 |
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