• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.3
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• pp.311-317
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• 2019

We first numerically analyzed the characteristics of a silicon-based grating structure for beam steering. The analysis includes the basic principle of the grating structure according to the wavelength, peak radiation angle, radiation efficiency, and full-width at the half maximum(FWHM) of the radiation angle. Based on the analysis, we propose a silicon-based grating structure integrated with distributed Bragg reflector(DBR) to obtain a high radiation efficiency and narrow beam width simultaneously. We performed the numerical optimization of the radiation efficiency and FWHM of the radiation angle according to the DBR position. By the design optimization using the proposed grating structure compatible with the complementary metal-oxide semiconductor(CMOS) process, we achieved a maximum radiation efficiency of 87.1% and minimum FWHM of radiation angle of $4.68^{\circ}$.

• Journal of the Korean Society of Radiology
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• v.10 no.6
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• pp.395-401
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• 2016

Upper gastrointestinal series is a diagnostic test that X-ray passes through the stomach after administering contrast media such as barium or gastrografin. Upper gastrointestinal series with an advantage of no side effect except temporary constipation or abdominal pain has been widely used to diagnose diseases of the gastrointestinal system. However, image degradation and diagnostic accuracy frequently occurred when improper movement and breath control were carried out by lack of understanding the overall inspection process for the upper gastrointestinal series. The movie of the upper gastrointestinal series was made for improving inspection accuracy and image quality. The examinees encouraged to see the movie for waiting time before doing upper gastrointestinal series. In this study, image quality and diagnostic accuracy was examined for the effect of the movie about upper gastrointestinal series. 60 patients composed of each 10 people from 30s to 80s were selected randomly among both 2,940 examinees in 2014 and 3,076 examinees in 2015. Image quality was evaluated by the full width at half maximum of profile for each image using the Image J. The measurement of the full width at half maximum showed 0.208 mm and 0.133 mm for after and before seeing the movie. Thus it was verified that the movie education could improve the image quality and diagnostic accuracy for upper gastrointestinal series.

• Journal of the Korean Society of Radiology
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• v.11 no.6
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• pp.509-515
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• 2017

The purpose of this study is to measure the 3 dimensional dose distribution of Gamma knife $Perfection^{TM}$, make a comparative analysis of the result and establish the measurement method for the procedures using EBT3 film. The dose distributions of the Gamma knife $Perfection^{TM}$ installed in two hospitals were evaluated in accuracy and precision. For accuracy, the difference between the mechanical center axis and the dose center axis was assessed on a 4 mm collimator. The allowed difference in accuracy is within 0.3 mm and it was measured as 0.098 mm, 0.195 mm for A hospital and 0.229 mm, and 0.223 mm for B hospital. For precision the difference between the FWHM(Full Width at Half Maximum) of Gamma Plan and measurement in the 4, 8, and 16 mm collimators was calculated. The allowed difference in precision is less than ${\pm}1mm$. The value of the hospital A was -0.283 ~ 0.583 mm, and the hospital B was -0.857 ~ 0.810 mm. When analyzing the dose distributions using the image-j program, it is necessary to establish a clearer reference point of the measurement point, and it is considered that the comparison of the dose distribution should be performed in actual treatment irradiation dose with a high dose usable film.

• Korean Journal of Optics and Photonics
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• v.33 no.4
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• pp.177-186
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• 2022

The performance of a surface plasmon resonance sensor is evaluated based on the sensitivity (nm/RIU) and sharpness from the full width at half maximum (FWHM) and the peak depth of a resonance peak. These factors are determined by the materials and conformational properties of the sensing structure. In this paper, we investigated an optimized insulator-metal-insulator (IMI) multilayer-based surface plasmon resonance sensor structure to simultaneously achieve high sensitivity, narrow FWHM, and deep peak depth while using gold for the metallic film layer which occurs peak broadening. By adopting the optimized structure, sensitivity of 8,390 nm/RIU, FWHM of 11.92 nm, and a resonance peak depth of 93.1% were achieved for 1.45-1.46 refractive index variation of the sensing layer. With the suggested structure conformation, high sensitivity and resolution of sensing performance can be achieved.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.363-367
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• 2015

This paper reports on thermally adjusted graphene oxide (GO) as the hole transport layer (HTL) for organic light-emitting diodes (OLEDs). GO is generally not suitable for HTL of OLEDs because of intrinsic specific resistance. In this paper, the specific resistance of GO is adjusted by the thermal annealing process. The optimum specific resistance of HTL is found to be $10^2{\Omega}{\cdot}m$, and is defined by the maximum current efficiency of OLEDs, 2 cd/A. In addition, the reasons for specific resistance change are identified by x-ray photoelectron spectroscopy (XPS). First, the XPS results show that several functional groups of GO were detached by thermal energy, and the amount of epoxide changed substantially following the temperature. Second, the full width at half maximum (FWHM) of the C-C bond decreased during the process. That means the crystallinity of the graphene improved, which is the scientific basis for the change in specific resistance.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.135-139
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• 2016

I propose a vector passive harmonic mode-locked fiber laser based on topological insulator Bi2Se3 interacting with a fiber taper with a diameter of 7 μm. The particles of topological insulator are deposited uniformly onto the fiber taper with light pressure effect. By incorporating the fabricated saturable absorber into an Er-doped fiber laser cavity, stable mode-locked fiber is obtained. Due to the intense evanescent field of the fiber taper, strong confinement of light enhances the nonlinearity of the laser cavity, and passive harmonic mode-locking is performed. I observe a maximum harmonic mode-locking of 356th, corresponding to a frequency of 3.57 GHz. The pulse duration is 824 fs, and the full width at half maximum of the spectrum is about 8.2 nm. The polarization dependent loss of the saturable absorber is ~ 2.5 dB in the wavelength range of the C band. As the cavity contains no other polarization dependent device, the mode-locked laser is functioning in the vector state. The harmonic order vs pump power is investigated. To the best of our knowledge, this report is the highest frequency mode-locked fiber laser based on Bi2Se3. Experimental results indicate that the topological insulator Bi2Se3 functioning with a thin fiber taper is effective for vector harmonic mode-locking.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.128.2-128.2
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• 2014

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material (Al0.2Ga0.8Sb) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the 1st satellite superlattice peak from the X-ray diffraction was around 45 arc sec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12eV) at 80 K while under an applied bias of -1.4V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.2{\times}10^{-5}A/cm^2$ at 80 K and with a bias -1.4 V. The responsivity was 1.9 A/W at $7.5{\mu}m$ at 80K and with a bias of -1.9V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.367-367
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• 2008

Aluminum nitride (AlN) thin films have been deposited on Si substrate by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different $N_2$ concentration. It was found that $N_2$ concentration was varied in the range up to 20-100%, highly c-axis oriented film can be obtained at 50% $N_2$ with full width at half maximum (FWHM) $4.5^{\circ}$. Decrease in surface roughness from 7.5 nm to 4.6 nm found to be associated with decrease in grain size, with $N_2$ concentration; however, the AlN film fabricated at 20% $N_2$ exhibited a granular type of structure with non-uniform grains. The absorption peak was observed around 675 $cm^{-1}$ in fourier transform infrared spectroscopy (FTIR). It is concluded that the AlN film deposited at $N_2$ concentration of 50% exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.463-467
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• 2008

Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.357-358
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• 2007

Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.