Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.357-358
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- 2007
Raman Characteristics of Polycrystalline 3C-SiC Thin Films
다결정 3C-SiC 박막의 라만 특성
- Jeong, Jun-Ho (Univ. of Ulsan) ;
- Chung, Gwiy-Sang (Univ. of Ulsan)
- Published : 2007.06.21
Abstract
Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and