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Fabrication and analysis of $1.3\mum$ spot-size-converter integrated laser diodes (광모드변환기가 집적된 $1.3\mum$ SC-FP-LD 제작 및 특성 해석)

  • 심종인
    • Korean Journal of Optics and Photonics
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    • v.11 no.4
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    • pp.271-278
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    • 2000
  • We have fabricated and analyzed the lasing characteristics of 1.3$\mu\textrm{m}$ Spot-Size-Converter (SSC) integrated Fabry-Perot (FP) laser diodes, which are very promising light sources for optical subscriber networks. SSC-LDs has been developed by BIB (buttjoint-built-in) coupling and selective MOVPE growth. High-performances were achieved such as the slope efficiency from the SSC facet of 0.23-0.32 mW/mA, the full-width at the half maximum of the far-field pattern (FFP) of 9.5$^{\circ}$~12.3$^{\circ}$, the alignment tolerances of $\pm$2.3$\mu\textrm{m}$ and $\pm$2.5$\mu\textrm{m}$ within the extra-coupling loss of 1 dB for the vertical and parallel directions, respectively. These experimental results were compared to theoretical ones in order to clarify the operational problems and give a good design direction of the fabricated SSC-LDs. It was revealed that an asymmetric output power from the facets, an irrelevancy of FFP and the waveguide structure around SSC facet region, and a poor temperature characteristics were originated from the scattering in the BIB and SSC sections and SHB effect in the active section for the first time.t time.

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Growth and optical characterization of $CuInSe_2$ single crystal thin film for solar cell application (태양전지용 $CuInSe_2$단결정 박막 성장과 광학적 특성)

  • 백승남;홍광준
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.4
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    • pp.202-209
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    • 2002
  • The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

Properties and Structures of Bi2O3-B2O3-ZnO Glasses for Application in Plasma Display Panels Rib (PDP Rib용 Bi2O3-B2O3-ZnO계 유리의 물성과 구조)

  • Jin, Young-Hun;Jeon, Young-Wook;Lee, Byung-Chul;Ryu, Bong-Ki
    • Journal of the Korean Ceramic Society
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    • v.39 no.2
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    • pp.184-189
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    • 2002
  • This study, compared with data of PbO-base glass system is a part of new glass composition design with Bi-base composition for PDP Rib. As $Bi_2O_3-B_2O_3-ZnO$ glass composition including Bi, which have similar density value and work facility to PbO, properties of softening point, thermal expansion coefficient, chemical durability, dielectric constant, and structural changing by XPS were investigated. $Bi_2O_3-B_2O_3-ZnO$ glass system, added 50∼80 wt% $Bi_2O_3$ widely, were presented 400∼480$^{\circ}C$ softening temperature, $68{\sim}72{\times}10^{-7}/^{\circ}C$ thermal expansion coefficient and 13∼25 dielectric constant. These results were showed similar physical properties with Pb-base glass system of same composition content, application possibility as starting composition of rib material was identified through micro-control of components and physical properties. The bonding energy of $O_{1s}$ as the $Bi_2O_3$ content decreasing was increased and full width at half-maximum (FWHM) was decreased, which is caused by non-bridging oxygen increasing.

Image Quality Evaluation in Computed Tomography Using Super-resolution Convolutional Neural Network (Super-resolution Convolutional Neural Network를 이용한 전산화단층상의 화질 평가)

  • Nam, Kibok;Cho, Jeonghyo;Lee, Seungwan;Kim, Burnyoung;Yim, Dobin;Lee, Dahye
    • Journal of the Korean Society of Radiology
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    • v.14 no.3
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    • pp.211-220
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    • 2020
  • High-quality computed tomography (CT) images enable precise lesion detection and accurate diagnosis. A lot of studies have been performed to improve CT image quality while reducing radiation dose. Recently, deep learning-based techniques for improving CT image quality have been developed and show superior performance compared to conventional techniques. In this study, a super-resolution convolutional neural network (SRCNN) model was used to improve the spatial resolution of CT images, and image quality according to the hyperparameters, which determine the performance of the SRCNN model, was evaluated in order to verify the effect of hyperparameters on the SRCNN model. Profile, structural similarity (SSIM), peak signal-to-noise ratio (PSNR), and full-width at half-maximum (FWHM) were measured to evaluate the performance of the SRCNN model. The results showed that the performance of the SRCNN model was improved with an increase of the numbers of epochs and training sets, and the learning rate needed to be optimized for obtaining acceptable image quality. Therefore, the SRCNN model with optimal hyperparameters is able to improve CT image quality.

Characterization of GaN epitaxial layer grown on nano-patterned Si(111) substrate using Pt metal-mask (Pt 금속마스크를 이용하여 제작한 나노패턴 Si(111) 기판위에 성장한 GaN 박막 특성)

  • Kim, Jong-Ock;Lim, Kee-Young
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.3
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    • pp.67-71
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    • 2014
  • An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

Study on deposition condition of epitaxial $Y_2O_3$ buffer layer deposited on textured metal substrates for $YBa_2Cu_3O_7$ coated conductors (YBCO Coated Conductor를 위한 texture된 금속 기판위의 epitaxial $Y_2O_3$ 완충층 증착 조건에 관한 연구)

  • Shin, K.C.;Ko, R.K.;Park, Y.M.;Chung, J.K.;Shi, Dongqi;Choi, S.J.;Song, K.J.;Park, C.;Son, Y.G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.565-568
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    • 2003
  • 2세대 초전도 선재로 알려져 있는 $YBa_2Cu_3O_{7-\delta}$ coated conductor는 금속모재/완충층/초전도층/보호층의 구조를 가진다. 2개 이상의 산화물 다층 박막으로 이루어진 완충층은 금속기판의 집합조직을 초전도층까지 전달하는 역할, 금속기판의 금속이 초전도층으로 확산되어 초전도층의 전기적 특성을 열화시키는 것을 막아주는 확산장벽으로의 역할 등을 수행한다. 1차 완충층은 금속기판의 집합조직을 유지하여야하며, 금속기판의 산화를 방지하면서 증착 되어야 한다. coated conductor 제조를 위한 첫 단계로 Pulsed Laser Deposition법을 이용하여 cube texture된 Ni 기판 위에 $Y_2O_3$ 박막을 증착 하였다. 최적의 증착 조건을 찾기 위해 증착 챔버의 산소 및 $H_2/Ar$ 혼합가스 분압과 기판온도를 변화시키면서 증착 하였다. $Y_2O_3$층의 (100) 집합조직은 기판온도 $600{\sim}700^{\circ}C$와 산소 분압 $0.01{\sim}0.1mTorr$에서 증착된 Y2O3 박막에서 금속기판과 유사한 집합조직을 얻을 수 있었다. 최적의 증착 조건에서 $Y_2O_3$ (222) ${\Phi}-scan$의 full width at half maximum (fwhm)이 $11^{\circ}$이고 (400) ${\omega}-scan$ fwhm은 $6^{\circ}$이었다.

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Analysis of Image Quality According to Imaging Parameters in Digital Tomosynthesis (디지털 단층영상합성장치의 영상획득 조건에 따른 화질 분석)

  • Lee, Dahye;Lee, Seungwan;Kim, Burnyoung;Yim, Dobin;Nam, Kibok;Cho, Jeonghyo
    • Journal of the Korean Society of Radiology
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    • v.14 no.4
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    • pp.477-486
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    • 2020
  • The purpose of this study was to evaluate the effects of reconstruction filters, X-ray source trajectories and intervals in the quality of digital tomosynthesis (DT) images, and the results was clinically validated. The filtered back-projection was implemented by using Ramp, Shepp-Logan, Cosine, Hamming, Hann and Blackman filters, and the X-ray source trajectories were simulated with 1 × 36, 2 × 18, 3 × 12, 4 × 9 and 6 × 6 arrays. The X-ray source intervals were 5, 10, 20, 30 and 40 mm. The depth resolution, spatial resolution and noise of DT image were evaluated by measuring artifact spread function (ASF), full width at half maximum (FWHM) and signal-to-noise ratio (SNR), respectively. The results showed that the spatial resolution and noise properties of DT images were maximized by the Ramp and Blackman filters, respectively, and the depth resolution and noise properties of the DT images obtained with a 1 × 36 X-ray source trajectory were superior to the other trajectories. The depth resolution and noise properties of DT images improved with an increase of X-ray source intervals, and the high X-ray source intervals degraded the spatial resolution of DT images. Therefore, the characteristics of DT images are highly dependent on reconstruction filters, X-ray source trajectories and intervals, and it is necessary to use optimal imaging parameters in accordance with diagnostic purpose.

Electrodeposition of some Alpha-Emitting Nuclides and its Isotope Determination by Alpha Spectrometry (몇가지 알파입자 방출 핵종의 전해석출 및 알파 스펙트럼 측정에 의한 그의 동위원소 정량)

  • Key-Suck Jung;In-Suck Suh
    • Journal of the Korean Chemical Society
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    • v.27 no.4
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    • pp.279-286
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    • 1983
  • An apparatus was made for the electrodeposition of alpha emitting actinide nuclides, $^{207}Bi$ and $^{210}Po$. The electrodeposition was made on a polished stainless steel plate cathode. The anode was made of platinum wire and to stir the solution. With the ammonium chloride as electrolyte initial pH = 4, chloride concentration = 0.6M and solution volume = 15ml, a current of 1.5 ampere(current density = 0.59A/$cm^2$) was flowed for 100 minutes for the quantitative recovery of electrodeposition and on average recovery of 98.3% was obtained within ${\pm}$0.7% uncertainty. Alpha spectrometry of the electrodeposited sample showed alpha peaks from $^{210}Po, ^{234}U$ and $^{239}Pu$ having energy resolution (FWHM) of 18.3, 21.8 and 36.0 keV respectively. The electrodeposition and alpha spectrometry for a natural uranium sample of domestic origin gave $^{238}U : ^{234}U = 1 : 6.1{\times}10^{-5}$ and for a neutron-irradiated uranium sample did $^{238}U : ^{239}Pu : ^{241}Am = 100 : 0.0263 : 5.20{times}10^{-5}$. The result of $^{238}U$ determination in the irradiated sample by electrodeposition-alpha spectrometry was in accord within ${\pm}1.6%$ of relative error with the results of solid fluorimetry and mass spectrometry. For $^{239}Pu$ the result of electrodeposition-alpha spectrometry was in accord within ${\pm}$4.0% of relative error with the results of anion exchange separation and the thenoyltrifluoroacetone(TTA) extraction both followed by alpha spectrometries.

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Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method (HVPE를 이용하여 r-plane 사파이어 위에 multi-step으로 성장시킨 a-plane GaN 에피층의 특성 연구)

  • Lee, Won-Jun;Park, Mi-Seon;Jang, Yeon-Suk;Lee, Won-Jae;Ha, Ju-Hyung;Choi, Young-Jun;Lee, Hae-Yong;Kim, Hong-Seung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.3
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    • pp.89-94
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    • 2016
  • In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

Design and Performance Evaluation of Small Size Counting and Imaging Gamma Probe System (소형 계수용 및 영상용 감마프로브 시스템의 설계와 성능평가)

  • Yang, Myo-Geun;Kwark, Cheol-Eun;Sim, yong-Geol;Kim, Hee-Joung;Choi, Yong;Chung, Jung-Key;Lee, Myung-Chul;Koh, Chang-Soon
    • Journal of Biomedical Engineering Research
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    • v.18 no.3
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    • pp.291-299
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    • 1997
  • As a microimaging device detecting gamma rays emitted from small lesions or tumors during operation, the intraoperative surgical probe has been proposed and is now under development. We have designed a multipurpose portable gamma prove system and evaluated the performance both for the absolute counting purpose of residual radioactivities and for the localizing capability of gamma events using the NaI(Tl) crystal and two types of photomultiplier tubes(PMTs). Counting efficiencies in the range of routine clinical use of radiation dose were measured using the assembly of single channel PMTs and 0.5 inch thick NaI(Tl) crystal of 1 inch diameter. The positioning of gamma events for imaging purpose requires the multiple channel PMTs with appropriate positioning electronics. We have designed a simple and reliable positioning circuit based on the concept of modified Anger. In preliminary experiments using the multiple channel PMT of 3 inch diameter and the dim lighth source, we were able to trace and localize the correct position with reduced positioning error by the use of two multiplier/divider chipset and simplified peripherals. The energy resolutions for the counting gamma probe measured as full width at half maximum(FWHM) for Cs-137, F-18, Tc-99m were 12%, 13%, and 36%, respectively. The spatial resolution for the imaging gamma probe measured as FWHM for green LED was 2.9 mm. The results indicate that the currently developing probe is very promising and could be very useful for many applications in nuclear medicine. Future studies will include developing collimators, improving interface hardwares, and evaluating the system with clinical data.

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