• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2007년도 하계종합학술대회 논문집
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• pp.437-438
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• 2007

In this paper a embedded decoupling capacitor design with gap structure will be discussed. A novel structure is modeling and analization by High Frequency Structure Simulator (HFSS). Proposed capacitor have $2m{\times}2m$ in rectangular shape. The film thickness of copper/dielectric film/substrate is respectively 35um/20um/35um. A dielectric layer of BaTiO3/epoxy has the relative permittivity of 25. Compare of the planar decoupling capacitor, capacitance densities of this structure in the range of $55{\mu}F$/mm2 have been obtained with 50um gap while capacitance densities of planar structure $55{\mu}F$/mm2 in the same size. The frequency dependent behavior of capacitors is numerically extracted over a wide frequency bandwidth 500MHz-7GHz. The decoupling capacitor can work at high frequency band increasing the gap size.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.5-8
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• 2004

We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.

• 전자공학회논문지
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• 제53권12호
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• pp.15-19
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• 2016

매우 큰 사이즈를 가진 multi-finger RF MOSFET의 $S_{11}$-parameter에서 스미스차트의 저항 circle 라인을 벗어나는 kink 현상의 게이트 바이어스 종속 특성이 관찰되었다. 이러한 바이어스 종속성은 $S_{11}$-parameter의 크기와 위상, 입력저항, 입력 커패시턴스의 주파수 응답곡선을 측정하여 최초로 분석되었다. 그 결과 입력 커패시턴스의 크기와 입력저항의 dominant pole과 zero 주파수에 의해 $V_{gs}$ 종속 kink 현상이 크게 변하는 것을 알 수 있다. $V_{gs}=0V$일 때 매우 적은 $S_{11}$-parameter 위상차와 입력저항의 높은 pole 주파수에 의해 고주파영역에서 kink 현상이 나타난다. 하지만 $V_{gs}$가 높아지면 $S_{11}$-parameter 위상차가 크게 증가하고 pole 주파수가 낮아져 저주파영역에서 kink 현상이 발생하게 된다.

• 한국군사과학기술학회지
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• 제3권1호
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• pp.155-163
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• 2000

A general characterization procedure based on the extraction of a 2n-port admittance matrix corresponding to n uniform coupled lines on the multi-layered substrate using the Finite-Difference Time-Domain (FDTD) technique is presented. The frequency-dependent normal mode parameters are obtained from the 2n-port admittance matrix, which in turn provides the frequency-dependent distributed inductance and capacitance matrices. To illustrate the technique, several practical coupled line structures on multi-layered substrate, including a three-line structure, have been simulated. It is shown that the FDTD based time domain characterization procedure is an excellent broadband simulation tool for the design of multiconductor coupled lines on multilayered PCBs as well as thick or thin hybrid structures.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2005년도 춘계학술대회논문집
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• pp.303-306
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• 2005

This paper presents the frequency-dependent characteristics of leakage currents flowing through ZnO surge arrester block. The leakage current-voltage (I-V) characteristic curves of the commercial ZnO surge arrester blocks were measured. The resistive leakage current was found to increase with increasing frequency in the low conduction region. The capacitance of ZnO block was independent of the magnitude and frequency of the applied voltage. The power losses of ZnO block increase as the frequency of applied voltage increases, because of the dielectric loss related to the frequency of the test voltage.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.273-278
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• 2002

Even though the modulating signal frequency of the light is too high to detect directly, the signal can be extracted by frequency conversion at the same time as the detection by means of the non-linearity of the APD. An analysis is presented for super-high-speed optical demodulation by an APD with electronic mixing. A normalized gain is defined to evaluate the performance of the frequency conversion demodulation. The nonlinear effect of the internal capacitance was included in the small signal circuit analysis. We showed theoretically and experimentally that the normalized gain is dependent on the down converted difference frequency component. In the experiment, the down converted different frequency outputs became larger than the directly detected original signal for the applied local signal of 20㏈m.

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• 센서학회지
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• 제25권1호
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• pp.1-7
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• 2016

Bioelectrical impedance (BI) at popliteal regions was measured using a bioelectrical impedance measurement system (BIMS), which employs the multi-frequency and the two-electrode method. Experiments were performed as follows. First, a constant AC current of $800{\mu}A$ was applied to the popliteal regions (left and right) and the BI was measured at eight different frequencies from 10 to 500 kHz. When the applied frequency greater than 50 kHz was applied to human's popliteal regions, the BI was decreased significantly. Logarithmic plot of impedance vs. frequency indicated two different mechanisms in the impedance phenomena before and after 50 kHz. Second, the relationship between resistance and reactance was obtained with respect to the applied frequency using BI (resistance and reactance) acquired from the popliteal regions. The phase angle (PA) was found to be strongly dependent on frequency. At 50 kHz, the PA at the right popliteal region was $7.8^{\circ}$ slightly larger than $7.6^{\circ}$ at the left popliteal region. Third, BI values of extracellular fluid (ECF) and intracellular fluid (ICF) were calculated using BIMS. At 10 kHz, the BI values of ECF at the left and right popliteal regions were $1664.14{\Omega}$ and $1614.08{\Omega}$, respectively. The BI values of ECF and ICF decreased sharply in the frequency range of 10 to 50 kHz, and gradually decreased up to 500 kHz. Logarithmic plot of BI vs. frequency shows that the BI of ICF decreased noticeably at high frequency above 300 kHz because of a large decrease in the capacitance of the cell membrane.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.115-118
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• 2003

Complex impedances with frequency and voltage variation were analyzed in $ITO/Alq_{3}/Al$(100nm)/Al device structure. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by capacitive component. Also, we have evaluated resistance, capacitance and permittivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.464-468
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• 2003

Complex impedances with frequency and voltage variation were analyzed in $ITO/Alq_3(60nm)/Al$ device structure. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by resistance and capacitive component. We have also evaluated resistance, capacitance and permittivity.