• Korean Journal of Acupuncture
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• v.21 no.2
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• pp.29-46
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• 2004

Objectives and Methods : This study was performed to investigate the effect of electro -acupuncture at four gates(bilateral LR3 and LI4) on brain activity in normal subjects using fMRI. Results and Conclusions : 1. fMRI signal increase by electro-acupuncture at Lt. LR3 was observed in Rt. Middle frontal gyrus in group average as well as more than half of the subjects. 2. fMRI signal decreases by electro-acupuncture at Lt. LR3 were observed in Rt. Superior frontal gyrus, Rt. Middle temporal gyrus, Rt. Cingulate gyrus in group average as well as more than half of the subjects. 3. fMRI signal increases by electro-acupuncture at Lt. LI4 were observed in Lt. Superior frontal gyrus, Lt. Middle frontal gyrus, Lt. Inf. Semi-Lunar Lobule(cerebellum), Rt. Middle frontal gyrus, Rt. Cingulate gyrus in group average as well as more than half of the subjects. 4. fMRI signal decreases by electro-acupuncture at Lt. LI4 were observed in Lt. Middle frontal gyrus, Lt. Inferior frontal gyrus, Lt. Precentral gyrus and Rt. Middle frontal gyrus, Rt. Middle temporal gyrus, Rt. Precuneus, Rt. Inferior frontal gyrus, Rt. Postcentral gyrus in group average as well as more than half of the subjects. 5. fMRI signal increase by electro-acupuncture at Lt. LR3 and Lt. LI4 in group average as well as more than half of the subjects was not observed. 6. fMRI signal decreases by electro-acupuncture at Lt. LR3 and Lt. LI4 were observed in Lt. culmen(cerebellum), Lt. Cingulate gyrus와 Rt. Middle frontal gyrus, Rt. Cingulate gyrus, Rt. Inferior frontal gyrus in group average as well as more than half of the subjects. 7. fMRI signal increases by electro-acupuncture at four gates (bilateral LR3 and LI4) were observed in Lt. Middle temporal gyrus and Lt. Postcentral gyrus in group average as well as more than half of the subjects. 8. fMRI signal decrease by electro-acupuncture at four gates (bilateral LR3 and LI4) were observed in Lt. Middle frontal gyrus, Lt. Precentral gyrus, Lt. Inferior frontal gyrus, Lt. Middle temporal gyrus, Lt. Frontal sub-gyral and Rt. Tuber(cerebellum) in group average as well as more than half of the subjects.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.11
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• pp.2621-2626
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as doping distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.691-694
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as charge distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.571-577
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• 2006

We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.39-47
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• 1994

The drain current reduction effect due to the side-gating phenomena resulted from interaction between the neighbor gates is lead to degradation of circuit performance. In this paper, these effect were modelized for circuit simulation with the shift of threshold voltage resulting from negative charge formation and the analysis of substrate leakage current resulting trapping effect. To remove dificiencies of the conventional three terminal structure, these model were implemented in SPICE with the four terminal structure, and then the constructed environment enables the simulation of circuit performance degradation resulted from side-gating effect. The validity of implemented model is proved by comparisoin with experiment data.

• Journal of Environmental Science International
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• v.18 no.9
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• pp.971-981
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• 2009

An objective of this study is as follows: 1) performing sensitivity analysis and parameter estimation of RMA2 and RMA4 models for the West-Nakdong River, 2) drawing up alternatives of gates-operation for water-quality enhancement, and 3) quantitative evaluation of methodology of 'flow-restoration by gates-operation' among 'Comprehensive Plan Improving Water-Quality in the West-Nakdong River(WNR)' with the target water-quality(BOD at Nakbon-N point: below 4.3 mg/L). The parameters for the RMA2 (depth-averaged two-dimensional flow model) and RMA4 (depth-averaged two-dimensional water-quality model) were determined by sensitivity analysis. Result of parameter estimation for RMA2 and RMA4 models is $1,000\;Pa{\cdot}s$ of the eddy viscosity, 20 of the Peclet number, 0.025 of the Manning coefficient, and $1.0\;m^2/s$ of the diffusion coefficient. We have evaluated the effects of water-quality enhancement of the selected alternatives by numerical simulation technique with the models under the steady-state flow condition and the time-variant transport condition. Because of no-resuspension from river bottom and considering BOD as conservative matter, these simulation results slightly differ from real phenomena. In the case of $50\;m^3/s$ of Daejeo-gate inflow, two-dimensional flow pn results result represents that small velocity occurs in the Pyungkang Stream and no flow in the Maekdo River. In the WNR, there occurs the most rapid flow near timhae-bridge. In the WNR, changes of water-quality for the four selected simulation cases(6, 10, 30, $50\;m^3/s$ of the Daejeo-gate inflow) were predicted. Since the Daejeo-Gate and the Noksan-Gate can be opened up to 7 days, it would be found that sustainable inflow of $30\;m^3/s$ at the Daejeo-gate makes BOD in the WNR to be under the target of water-quality.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.207-214
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• 2007

We fabricated thermally-evaporated 10 -Ni/(poly)Si and 10 -Ni/1 -Ir/(poly)Si structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required for annealing. Silicides underwent rapid at the temperatures of 300-1200 for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope(TEM) and an Auger depth profile scope were employed for the determination of vertical section structure and thickness. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates shoed low resistance up to 1000 and 800, respectively, while the conventional nickle monosilicide showed low resistance below 700. Through TEM analysis, we confirmed that a uniform, 20 -thick silicide layer formed on the single-crystal silicon substrate for the Ir-inserted case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of 1000. Auger depth profile analysis also supports the presence of thismixed microstructure. Our result implies that our newly proposed iridium-added NiSi process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.149-154
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• 2005

We fabricated Ni/Co(or Co/Ni) composite silicide layers on the non-patterned wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\~}1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the poly silicon inversion due to fast metal diffusion lead to decrease silicide thickness. Our results imply that we should consider the serious inversion and fast transformation in designing and process f3r the nano-height fully cobalt nickel composite silicide gates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.308-317
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/(poly)Si and 10 nm-$Ni_{0.5}Co_{0.5}$/(Poly)Si structures to investigate the microstructure of nickel silicides at the elevated temperatures required lot annealing. Silicides underwent rapid annealing at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profilescope were employed for the determination of vortical microstructure and thickness. Nickel silicides with cobalt on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1100^{\circ}C$ and $900^{\circ}C$, respectively, while the conventional nickle monosilicide showed low resistance below $700^{\circ}C$. Through TEM analysis, we confirmed that a uniform, $10{\sim}15 nm$-thick silicide layer formed on the single-crystal silicon substrate for the Co-alloyed case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo-alloy composite silicide process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• Cross-Cultural Studies
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• v.21
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• pp.213-254
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• 2010

The goal of this thesis is to make a comparative study about the variant form of the Chinese character in the five sorts of old maps drawing outside of the main gates of old map including DeDongYei-jido. The main task of this thesis can be classified under three heads - (1) introducing the literature of comparative study in the five sorts of old maps including DeDongYei-jido (2) classification of variant form in the five sorts of old maps (3) characteristic of variant form in the five sorts of old maps. In this thesis, aspect of variant form is classified under six head - (1) variation of the whole shape of the character (2) taking place the variation in both sides of Chinese character (3) taking place the variation in part (4) taking place variation in the strokes of the Chinese character (5) misusing different characters (6) changing different characters. This thesis explains some characteristic of variant form - (1) simplification of the shape of characters (2) using the Hou-qi-zi(後起字, Chinese character which is actually the same but made the next) (3) replacing the overlapped both sides of Chinese character with omit mark (4) a wrongly written character (5) discovering the variant form such as variant form of 廣, 广 variant form of 廛, variant form of 院 which was not recorded in Chinese literature. From now on, there should be some collections of variant form of Korean style and study. we are going to have to standardize aspect of variation and rule of variant form in old maps until we have to make some ways to recognize the block letter.