• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.10-13
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• 2007

Single crystalline, $LuFe_2O_4$, was grown by the floating zone method. The crystal structure was a two-dimensional layered-type rhombohedral($R\={3}mh$) structure, with an $a_0=3.440(2)\;{\AA}\;and\;a\;c_0=25.263(2)\;{\AA}$. The magnetic $N\'{e}el$ temperature($T_N$) was determined to be 250 K. The $M\"{o}ssbauer$ spectrum at 12 K was fitted with four sextet sets which was resulted from the crystal structure. The spectrm at room temperature consisted of three singlets and a doublet with the electric quadrupole splitting. The isomer shift($\delta$) value of the singlet was $0.20{\pm}0.01mm/s$ relative to the Fe metal indicating the $Fe^{3+}$ valence state, and the value of the doublet was $0.70{\pm}0.01mm/s$ indicating $Fe^{2+}$. The $M\"{o}ssbauer$ absorption area ratio between $Fe^{3+}$ and $Fe^{2+}$ at room temperature was 1:1. The doublet phase of spectra gradually disappears by up to 360 K. At 360 K, the spectrum shows the singlet phase. We suggested that the spontaneous polarization effect of $LuFe_2O_4$ was caused by the change of iron behavior.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.128-133
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• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.261-269
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• 2016

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm² that is the lowest-ever reported chip area for this frequency band was achieved.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.269-275
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• 2003

Polysilicon-oxide-nitride-oxide-silicon(SONOS) transistors were fabricated by using 0.35${\mu}{\textrm}{m}$ complementary metal-oxide-semiconductor(CMOS) process technology to realize a low voltage programmable flash memory. The thickness of the tunnel oxide, the nitride, and the blocking oxide were 2.4nm, 4.0nm, and 2.5nm, respectively, and the cell area of the SONOS memory was 1.32$\mu$$m^2$. The SONOS device revealed a maximum memory window of 1.76V with a switching time of 50ms at 10V programming, as a result of the scaling effect of the nitride. In spite of scaling of nitride thickness, memory window of 0.5V was maintained at the end of 10 years, and the endurance level was at least 105 program/erase cycles. Over-erase, which was shown seriously in floating gate device, was not shown in SONOS device.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.332-336
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• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.25 no.2
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• pp.119-127
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• 2012

A wire rope is comprised of several metal wires which are wound together like a helix and it can resist relatively large axial loads, as compared with bending and torsional loads. A shipbuilding crane for erection such as a floating crane, a gantry crane, and a crawler crane hoists up and down heavy blocks by using these wire ropes. Thus, it is necessary to find dynamic properties of a wire rope in order to safely lift the blocks using the crane. In this study, a formula for calculating the tension and torsional moment acting on wire ropes of the crane was derived based on the existing study, and then dynamic simulation of the crane was performed based on the formula. The result shows that the dynamic simulation can be applied to find the safe method for block erection of shipyards.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.121-129
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• 2011

It is progressing as new advents and remarkable developments of mobile device every year. On the upper line reason, NAND FLASH large density memory demands which can be stored into portable devices have been dramatically increasing. Therefore, the cell size of the NAND Flash memory has been scaled down by merely 50% and has been doubling density each per year. [1] However, side effects have arisen the cell distribution and reliability characteristics related to coupling interference, channel disturbance, floating gate electron retention, write-erase cycling owing to shrinking around 20nm technology. Also, FLASH controller to manage shrink effect leads to speed and current issues. In this paper, It will be introduced to solve cycling, retention and fail bit problems of sub-deep micron shrink such as Virtual negative read used in moving read, randomization. The characteristics of retention, cycling and program performance have 3 K per 1 year and 12.7 MB/s respectively. And device size is 179.32 $mm^2$ (16.79 mm ${\times}$ 10.68 mm) in 3 metal 26 nm CMOS.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.5
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• pp.227-233
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• 2016

Phase transformation phenomenon at high temperature was investigated by using designed TiAl-Nb alloys with addition of the ${\beta}$ stabilizer. Examination of dendritic morphologies in arc-melted button ingot could reveal the crystallography of the primary solidification phase. It was found that the addition of ${\beta}$ stabilizer(Nb) shifted the high temperature region of the binary Ti-Al phase diagram to the high Al composition side so that ${\beta}$ phase forms as a primary crystal even at higher Al composition compared with the binary Ti-Al system. The ${\beta}$ was found to be the primary solidification phase for alloys with Al content less than about 52 at.%. The composition of ${\beta}$ solidification in Ti-Al-Nb ternary system could be determined from the partial liquidus projection which was constructed by observing the microstructure of arc-melted buttons. The Ti-46Al-(6, 8)Nb composition was selected for ${\beta}$ solidification and the directional solidification was performed by a floating zone-type DS apparatus at the growth rate 30 mm/hr respectively.

• Journal of Korean Medical classics
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• v.34 no.4
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• pp.27-64
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• 2021

Objectives : This paper examined the Buddhist contents within the text, Bencaoshengyabanji(本草乘雅半偈). Methods : Medicinals that were searched through Buddhist vocabulary were examined. Results & Conclusions : Medicinals that quoted the Lengyanjing were related to the Water-Fire interaction, food and medicine, and karma, while those that quoted the Shidian were related to 無上道, 去惡殺蟲, 樞機滑利, and 生生之氣. Those related to the Great Earth of the Four Elements corrected the body's form based on Metal Qi, while those related to the Great Water were connected to the circulation of water dampness. Those related to the Great Fire were deeply related to Yang Qi, and those related to the Great Wind were connected to Wind control. Of the Four Origins, medicinals that were viviparous lowered Qi, while those that were oviparous were related to communicating Shen, treating diseases of the Conception Vessel, and the closing and opening of day and night. Medicinals originating from dampness were related to urination and fluid management, while those of metamorphosis were related to the process of Qi. Those related to emptiness were related to the communication of the Qi system, while those related to 六根六塵 were connected to calming the Shen and strengthening the will, and smoothing the nine orifices. Medicinals related to 圓通 were used for improving eyesight and hearing and controlling the closing and opening. Lu Zhi-yi's analysis of medicinals through the Lengyanjing is original in that it suggested a new perspective other than previous theories on pharmacology which were based on the Yin-Yang and Five Phases and Rising/Lowering/Floating/Sinking theories, but also pedantic and exaggerated. The Bencaoshengyabanji is a unique text on medicinals which analyzed each medicinal under Buddhist influence. However, it also followed the contexts of other previous texts on medicinals, and influenced Zou shu.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.1
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• pp.219-230
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• 2023

Marine waste is classified according to its location into coastal waste, floating waste, and submerged waste. As awareness of environmental issues increases, research on marine submerged waste in addition to visible trash is needed. In Korea, which is surrounded by the sea on three sides, this is a study on the distribution of marine sedimentary waste by type in the West Sea of Korea. Through the study, waste synthetic resin, scrap metal, waste tires, and others appeared in the order of large amounts. As a result showing the seriousness of waste synthetic resin among sediments deposited in the West Sea, it is expected to have a huge impact not only on the marine ecosystem but also on our lives in the near future. Through this study, it is judged that it will be helpful for future collection activities by recognizing marine submerged waste that was not known because it was invisible.