• Title/Summary/Keyword: floating gate

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A Design of Low-power/Small-area Divider and Square-Root Circuits based on Logarithm Number System (로그수체계 기반의 저전력/저면적 제산기 및 제곱근기 회로 설계)

  • Kim, Chay-Hyeun;Kim, Jong-Hwan;Lee, Yong-Hwan;Shin, Kyung-Wook
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.2
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    • pp.895-898
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    • 2005
  • This paper describes a design of LNS-based divider and square-root circuits which are key arithmetic units in graphic processor and digital signal processor. To achive area-efficient and low-power that is an essential consideration for mobile environment, a fixed-point format of 16.16 is adopted instead of conventional floating-point format. The designed divider and square-root units consist of binary-to-logarithm converter, subtractor, logarithm-to-binary converter. The binary to logarithm converter is designed using combinational logic based on six regions approximation method. As a result, gate count reduction is obtained when compared with conventional lookup approack. The designed units is 3,130 gate count and 1,280 gate count. To minimize average percent error 3.8% and 4.2%. error compensation method is employed.

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Implementation of Position Control of PMSM with FPGA

  • Reaugepattanawiwat, Chalermpol;Eawsakul, Nitipat;Watjanatepin, Napat;Pinprathomrat, Prasert;Desyoo, Phayung
    • 제어로봇시스템학회:학술대회논문집
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    • 2004.08a
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    • pp.1254-1258
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    • 2004
  • This paper presents of position control of Permanent Magnet Synchronous Motor (PMSM) the implementation with Field Programmable Gate Array (FPGA) is proposed. Cascade control with inner loop as a current control and an outer loop as a position control is chosen for simplicity and fast response. FPGA is a single chip (single processing unit), which will perform the following tasks: receive and convert control signal, create a reference current signal, control current and create switch signal and act as position controller in a addition of zero form. The 10 kHz sampling frequency and 25 bit of floating point data are defined in this implementation.The experimental results show that the performance of FPGA based position control is comparable with the hardware based position control, with the advantage of control algorithm flexibility

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Design of a Communication-Aid Circuit to Detect Eye-Gazed Patterns

  • Eguchi, Kei;Ueno, Fumio;Zhu, Hongbing;Tabata, Toru;Jayawickrema, Madhava
    • Proceedings of the IEEK Conference
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    • 2002.07a
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    • pp.470-473
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    • 2002
  • A communication-aid circuit to detect eye-gazed patterns is proposed in this paper. The circuit is an analog-digital mixed system. By determining the direction of eye-gazed pattern, the circuit detects an eye-gazed pattern from 2-dimensional arrayed patterns on a syllabary. Different from conventional systems, the syllabary is moved to overlap the eye-gazed pattern with the center coordinate of screen. Thus, the proposed circuit can avoid a complex calculation of the distance between the eye-gazed point and the center coordinate. Furthermore: an economical size of hardware can be provided since no full-adders are required by employing floating-gate MOSFBT's. The validity of the cricuit design is confirmed by computer simulations. Furthermore, to implement onto an IC chip, the layout design is performed by using a CAD tool, MAGIC.

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NAND Flash memory 소자 기술 동향

  • Lee, Hui-Yeol;Park, Seong-Gye
    • The Magazine of the IEIE
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    • v.42 no.7
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    • pp.26-38
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    • 2015
  • 고집적화를 위한 Floating Gate NAND 개발과정에서 몇 차례 기술적 한계상황에 직면하였었지만, Air-Gap, Double patterning, Multi-level Cell, Error Correction Code과 같은 breakthrough idea 을 활용하여 1Xnm까지 성공적인 scale-down 을 하였고 10nm 까지도 바라보고 있지만, 10nm 미만으로는 적절한 방안을 찾지 못한 상황입니다. CTD 의 3D NAND Flash는 Aspect Ratio, Poly channel의 intrinsic 특성, Data 보존 능력 등 해결 해야 할 issue 들이 남아 있지만, F.G Flash 의 지난 20년간 Lesson-learn 과 Band engineering, Channel Si, PUC 의 요소기술 개발 및 System algorithm 개발, QLC 개발 등을 통하여 F.G Flash를 넘어 지속적인 Cost-down 이 가능할 것입니다.

Substrate Network Modeling and Parameter- Extraction Method for RF MOSFETs (RF MOSFET의 기판 회로망 모델과 파라미터 추출방법)

  • 심용석;강학진;양진모
    • Journal of Korea Society of Industrial Information Systems
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    • v.7 no.5
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    • pp.147-153
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    • 2002
  • In this paper, a substrate network model to be used with BSIM3 MOSFET model for submicron MOSFETs in giga hertz frequencies and its direct parameter extraction with physically meaningful values are proposed. The proposed substrate network model includes a conventional resistance and single inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed without any optimization process. The proposed modeling technique has been applied to various-sized MOS transistors. The substrate model has been validated for frequency up to 300Hz.

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Development of the Automatic Turnout (자동 분수공의 개발)

  • 저하우;이남호;김성준;최진용;한형근;한휘남
    • Magazine of the Korean Society of Agricultural Engineers
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    • v.36 no.4
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    • pp.33-38
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    • 1994
  • Floating-type automatic turnout was developed for the purpose of reducing labor cost and labor-working hours related to turnout management. The point of automation is to use a flexible-float within the turnout. The weight of float is changed by emptying and filling with water at the beginning and ending of irrigation. The turnout is controlled to open and close small bole on the float bottom using electromagnets. With the weight control of float. the gate of turnout is opened by the empty float to begin irrigatiom and is closed by the filled float to stop irrigation. The turnout was designed to be operated by the main computer and to minimize electric power consumption by sending an electric current at the beginning and ending of irrigation. The functional experiment was succesfully carried out and the rating curves for both free overflow condition and submerged flow condition were derived.

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High Quality Vertical Silicon Channel by Laser-Induced Epitaxial Growth for Nanoscale Memory Integration

  • Son, Yong-Hoon;Baik, Seung Jae;Kang, Myounggon;Hwang, Kihyun;Yoon, Euijoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.2
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    • pp.169-174
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    • 2014
  • As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of $300cm^2/Vs$, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.

A New Dual-Gate SOI LIGBT by employing Separated Shorted Anode and Floating Ohmic Contact (분리된 단락애노드와 플로팅오믹접합을 사용한 새로운 SOI 이중게이트 수평형 절연게이트바이폴라트랜지스터)

  • Ha, Min-Woo;Lee, Seung-Chul;Oh, Jae-Keun;Jeon, Byung-Chul;Han, Min-Koo;Choi, Yearn-Ik
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1343-1345
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    • 2001
  • 본 논문은 스냅백을 효과적으로 제거하고 순방향 전압 강하를 줄이는 새로운 구조의 분리된 이중 게이트 SOI SA-LIGBT를 제안하였다. 제안된 소자는 분리된 단락 애노드와 플로팅 오믹 접합의 적용을 통해 스냅백이 성공적으로 제거되었고, 순방향전압강하는 전류밀도가 100A/$cm^2$일 때 기존의 SA-LIGBT에 비교해서 2V 감소된다. 또한 턴-오프 특성도 분리된 단락 애노드를 적용하였기 때문에 SA-LIGBT보다 개선되었다.

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A study of 1T-DRAM on thin film transistor (박막트랜지스터를 이용한 1T-DRAM에 관한 연구)

  • Kim, Min-Soo;Jung, Seung-Min;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.345-345
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    • 2010
  • 1T-DRAM cell with solid phase (SPC) crystallized poly-Si thin film transistor was fabricated and electrical characteristics were evaluated. The fabricated device showed kink effect by negative back bias. Kink current is due to the floating body effect and it can be used to memory operation. Current difference between "1" state and "0" state was defined and the memory properties can be improved by using gate induced drain leakage (GIDL) current.

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A Simple and Accurate Parameter Extraction Method for Substrate Modeling of RF MOSFET (간단하고 정확한 RF MOSFET의 기판효과 모델링과 파라미터 추출방법)

  • 심용석;양진모
    • Proceedings of the Korea Society of Information Technology Applications Conference
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    • 2002.11a
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    • pp.363-370
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    • 2002
  • A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30GHz.

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