• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.62-65
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• 2007

Conventional semiconductor processes have been utilized to fabricate 3.5-inch OTFT-driven OLEDs with a resolution of $176\;{\times}\;144$ pixels on plastic substrates. By using a PC-OVD method to deposit a pentacene layer and optimizing patterning and the following processes, we could complete a uniform and reliable integration procedure for an active matrix organic light emitting devices on a plastic substrate. The technical importance of ours is the applicability of conventional semiconductor process to organic materials on plastic substrates. Although there are many hurdles to overcome, our approach and technical improvements are proved to be applicable to plastic electronics.

• Journal of the Korean Society of Costume
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• v.61 no.8
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• pp.100-113
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• 2011

The earlier notion of feminism regarding gender equality was changed into that of Postfeminism because of gender differences. The idea of Postfeminism has been present since the 1980s but has been influenced by modern culture theories such as Postmodernism, Poststructuralism, Theory of Power and Discourse and Psychoanalysis. Various features of Postfeminism are found in the medieval warrior images of contemporary fashion. Warrior costumes were men's exclusive property in the medieval ages, but as it is introduced as women's wear in the 21st century, it shows us new fashion images which are constructed by gender deconstruction, differences and pastiche. In this regard, the purpose of this study is to examine a key characteristic of Postfeminism fashion. An article described the historical costumes of medieval warriors and refocused on the development processes of feminism and then conducted an analysis on formative characteristics and Postfeminism tendencies in contemporary women's wear from 2000 to 2011. The results were that materials such as metallic and flexible materials, monotonic and red colors and detailed patterns of armor were used to display forms of exaggeration and restraint. These elements fully and correctly expressed the image of a medieval warrior woman in contemporary fashion. Postfeminism fashion is constructed with feminine power, gendered identity, sensual elegance and a postmodern body. Postfeminism is the contemporary cultural icon and is continuously influencing modern fashion design in the 21st century in a positive and powerful way.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.238-243
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• 2018

A nanofiber was fabricated with carbon nanotubes for transparent electrodes. It was prepared with a composite solution of bio-molecules polycaprolactone (PCL) and multiwalled carbon nanotubes (MWCNTs) by electrospinning on a glass substrate, following which its electrical characteristics were investigated. The content of MWCNTs was varied during electrospinning, while that of PCL was fixed. Further, a nanometer-thick thin film of silver was deposited on the nanofiber layer using a thermal evaporator to improve the electrical characteristics; the sheet resistance significantly reduced after this deposition. The results showed that this carbon nanotube nanofiber has potential applications in biotechnology and as a flexible transparent display material.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.10
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• pp.1412-1416
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• 2014

We report thin-film organic moisture barriers based on polystyrene(PS) laminates deposition by PECVD for an encapsulation of OLEDs. The organic polystyrene thin-film has the benzene ring structure and high hydrophobic characteristics and it was polymerized by PECVD in dry process. Life time properties of Ca test were obtained 32 minutes at the RF 100W process conditions. From the AFM test, the roughness of multi-layer thin-film was more excellent rather than that of a single-layer thin-film. In addition, 5 layers of the multi-layer film properties were obtained 45 minutes. So that the optical and electrical properties were not affected with these plasma polymerized organic thin-film encapsulation. For life time improvement, the inorganic $Al_2O_3$ thin-film were deposited 5nm using ALD atomic layer deposition. The WVTR(Water Vaper Transmission Rate) value of hybrid thin-film encapsulation in the optimum process conditions was resulted by less than $10-3g/m^2/day$. From the results of experiment, plasma polymerized hybrid encapsulation was suggested as the flexible display applications.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.3
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• pp.1033-1039
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• 2013

Recently, as the product life cycle becomes shorter and customer needs becomes various, it has a great difficulty in managing the product information without the information technology. In this paper, we discuss how to classify numerous BOMs types and propose three categories-Structure-BOM, Display-BOM and Function-BOM for BOMs classification. Based on this result, we design the integrated BOMs management system with ERD(Entity-Relaion-Daiagram) model. This paper presented the methodology for management speed-up and communication innovation in the automotive industry, which incorporated the enterprise-wide product information. The proposed enterprise-BOM design methods also systemized the data related to automotive's principal attributes such as types of levels, options, colors, and consumers' orders. Efficient and flexible development of products can be achieved in the frequently varying environment of products.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.5
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• pp.216-219
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• 2016

$SnO_2$ single layer films (100 nm thick) and 2 nm thick Ni intermediated $SnO_2$ films were deposited on glass substrate by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni interlayer on the electrical and optical properties of the films were investigated. As deposited $SnO_2$ single layer films show the optical transmittance of 82.6% in the visible wavelength region and a resistivity of $6.6{ \times}10^{-3}{\Omega}cm$, while $SnO_2/Ni/SnO_2$ trilayer films show a lower resistivity of $2.7{ \times}10^{-3}{\Omega}cm$ and an optical transmittance of 76.3% in this study. Based on the figure of merit, it can be concluded that the intermediate Ni thin film effectively enhances the opto-electrical performance of $SnO_2$ films for use as transparent conducting oxides in flexible display applications.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.3
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• pp.100-109
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• 2022

In this study, calibration technology that increases the alignment accuracy in large flexible flat panels was studied. For precise of calibration, a systematization of the calibration algorithm was established, and a calibration correction technique was studied to revise calibration errors. A coordinate systems of camera and UVW stage was established to get the global position of the mark, and equations for translational and rotational calibration were systematically derived based on geometrical analysis. Correction process for the calibration data was carried, and alignment experiments were performed sequentially in cases of the presence or absence of calibration-correction. Alignment results of both calibration correction and non-calibration correction showed accuracy performance less than 1㎛. On the other hand, the standard deviation in calibration-correction is smaller than non-calibration correction. Therefore, calibration correction showed improvement of the alignment repeatability.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.