• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.4-4
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• 2008

The progress in flat panel displays over the last two decades has been astonishing. In just 20 years, the LCD-TV grew up from a 2-inch curiosity, to an industry that will sell about 120 million flat panel TV's this year, with viewing area up to 4000 times larger. That success is based on continuous innovation, especially in manufacturing processes. For the next decade to bring another doubling of the business, progress will need to continue in four major areas: Human factors, ecological impact, visual quality, and of course continued drive towards affordability. This talk will detail the technology advances that can allow this industry to meet those challenges. Human factors. Today, we adapt our lifestyle to our technology. People organize their offices, and their homes, around displays. We pass around mobile phones to share images, rather than experiencing them as a group. Billions of newspapers continue to be sold daily. Advances in flexible displays can lead to large portable displays. "New era projection" includes the handheld Pico Projectors that are already on the market, and will ultimately appear integrated in mobile phones the same way cameras do today. "Eco" impact. Today TV's are one of the top energy consumers in a U.S. home, and the fastest growing. Watching a large flat panel TV can cost twice as much as running a large refrigerator. With today's concern about energy consumption, regulations are starting to emerge worldwide to limit TV electrical use. Fortunately, good solutions exist in using light management films to eliminate bulbs, saving power without increasing cost. Going forward, LED backlights will drive another step downward. OLED displays might be the ultimate solution. Visual quality. The color of an LCD-TV is still often considered inferior to a far less expensive CRT. And almost all displays suffer from representing a three-dimensional world on a two dimensional surface. The technology to improve color is available today, and will likely move from premium sets into the mainstream as costs come down. 3D is now arriving in movie theaters worldwide, and that will drive up the demand for similar realistic images in home theaters. And the technology is emerging today for 3D representation to move beyond specialized applications into everyday use, on screens large and small. Affordability. The world takes cost-down miracles for granted in consumer electronics. Each of these other advances will be balanced with a drive for affordability, especially as the market grows in emerging countries. The other three challenges must be met without increasing cost. Putting this all together, the next few years will emphasize "eco friendly" designs, and enhanced images such as 3D. By 2013 we will start to see serious penetration by emissive technologies (OLED, high efficiency plasma, or other), with the "ultimate display" likely not in the market for a decade. Lots of opportunities for innovation remain ahead of us.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.291-294
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• 2015

Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical properties, we fabricated TFTs having Al doped Zinc Oxide (AZO) layer inserted between the gate insulator and ZnO layer. The AZO and ZnO layers are deposited by Atomic layer deposition (ALD) method. I-V transfer characteristics and stability of the suggested devices are investigated under the positive gate bias condition while the channel defects are also analyzed by the photoluminescence spectrum. The TFTs with AZO layer show lower threshold voltage ($V_{th}$) and superior sub-threshold slop. In the case of $V_{th}$ shift after positive gate bias stress, the stability is also better than that of ZnO channel TFTs. This improvement is thought to be caused by the reduced defect density in AZO/ZnO stack devices, which can be confirmed by the photoluminescence spectrum analysis results where the defect related deep level emission of AZO is lower than that of ZnO layer.

• Applied Chemistry for Engineering
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• v.26 no.4
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• pp.381-388
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• 2015

Organic Light Emitting Diodes (OLEDs) have been receiving great attention in academic and industrial fields, and it is being actively applied to mobile display, as well as large area TV and next-generation flexible display due to their excellent advantages. In addition, the scope of research on OLED materials and device fabrication technology is getting expanded. This review discusses the principle and basic composition of OLED and also classifies OLED materials with different chemical structures according to their usages. Systematic classification of OLEDs by technical concept and material characteristics can help developing new emitting materials.

• Journal of Broadcast Engineering
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• v.9 no.3
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• pp.236-245
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• 2004

A multiview sequence CODEC with view scaiability is proposed in this paper. We define a GGOP (Group of GOP) structure as a basic coding unit to efficiently code multiview sequences. 7he proposed CODEC provides flexible GGOP structures based on the number of views and baseline distances among cameras. Multiview sequences encode consists of disparity estimation/compensation, motion estimation/compensation, residual coding and rate control and generates multiview sequence bitstream. The main bitstream is the same as an MPEG-2 mono-sequence bitstream for MPEG-2 compatibility. The auxiliary bitstream contains information concerning the remaining multiview sequences except for the reference sequences. The proposed CODEC with view scalability provides that a number of view flints are selectively determined at the receiver according to the type of display modes. The proposed multiview sequence CODEC is tested with several multiview sequences to determine its flexibility. compatibility with MPEG-2 and view scaiability. In addition, we subjectively confirm that the decoded bitstreams with view scaiability can be Properly displayed by several types of display modes. including 3D monitors.

• Journal of the Korean Society of Costume
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• v.66 no.8
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• pp.98-108
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• 2016

Knitwear has been used as an active and functional clothing item due to its flexible and soft nature. Diverse design expressions have made knitwear into an essential fashion item for people today, who are constantly seeking for ways to display their individualism. The purpose of this study is to analyze the actual wearing conditions, and the preferred designs of knitwear for female college students in order to provide a baseline data, which can be used to develop knitwear designs for the subjects of the study. Survey by questionnaire of 135 female college students in 3 universities in Seoul were analysed. The results of the study are as follows: First, the most owned knitwear were sweaters and cardigans. Knitwear was viewed as soft and warm, as well as versatile. It was not restricted to certain sizes, and was comfortable to wear for different activities. Seound, the most preferred items were sweaters and cardigans. The most preferred styles were round neckline sweaters and open V-neckline cardigans. Third, the most preferred designs were plain designs with achromatic colors and wool-blended fabrics. The most preferred images were simple images. The most preferred fit was loose enough for little bit of room inside. Fourth, appropriateness and design of the knitwear were assessed during the purchasing stage. the most preferred method of purchase was purchasing via online stores after researching the knitwear through various channels, such as store visits and the Internet. The preferred price of knitwear was below 100,000 KRW. Fifth, the most common complaints were as follows: changes in the shape and quality of the knitwear after a wash, appearance of nap, and loose threads. In short, it is necessary for female college students to develop high quality knitwear with designs that can display individuality, while being simple.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.27-31
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• 2006

We reported the grain growth of pentacone on $HfO_2$ film depending on OTS treatment. The hydrophilic $HfO_2$ thin film was changed into hydrophobic with less interface energy by OTS treatment. The grain size of pentacene on OTS/$HfO_2$ film was increased from 50 nm to 90 nm with the variation of surface energy and the structure was maintained 3-dimensional island structure. Pentacene on OTS/$HfO_2$ surface was directionally arrayed due to appearance of the only thin film phase without bulk phase by OTS treatment.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.4
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• pp.395-403
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• 2012

This is direct bonding many of the metal bumps between FPCB and HPCB substrate. By using an ultrasonic horn mounted on an ultrasonic bonding machine, it is possible to bond gold pads onto the FPCB and HPCB at room temperature without an adhesive like ACA or NCA and high heat and solder. This ultrasonic bonding technology minimizes damage to the material. The process conditions evaluated for obtaining a greater bonding strength than 0.6 kgf, which is commercially required, were 40 kHz of frequency; 0.6MPa of bonding pressure; and 0.5, 1.0, 1.5, and 2.0 s of bonding time. The peel off test was performed for evaluating bonding strength, which was found to be more than 0.80 kgf.