• 제목/요약/키워드: film-electrodes

검색결과 789건 처리시간 0.035초

Al-Cu 합금 전극막 구조를 갖는 사다리형 SAW filter의 RF-고전력 내구성 특성 고찰 (A Study on RF High Power Durability of Al-Cu Alloy Electrodes Used in Ladder-type SAW(surface acoustic wave) Filters)

  • 김남철;이기선;서수정;김지수;김윤동
    • 한국전기전자재료학회논문지
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    • 제14권5호
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    • pp.435-443
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    • 2001
  • As power durable RF SAW filters, AL-(0∼2wt%)Cu alloy multi-layered thin electrodes were deposited on 42° LiTaO$_3$ piezoelectric substrates by magnetron sputtering process, and then ladder-type RF SAW filters, satisfying the electrical specification of CDMA transmission band, were fabricated through optimizing SAW resonator structures. The temperature of film electrodes in SAW filter was increased with RF power, and reached the maxima to cause a failure of SAW filters at the cut-off frequencies of the RF filter band. As RF power increases, the electrodes of Al-Cu alloy showed higher power durability than that of pure Al. The multi-layer laminated film of Al-1wt.% Cu/Cu/Al-1wt%Cu resulted in the best power durability up to 4W of RF power. Every film electrode, however, was destroyed within seconds whenever applying a critical RF power to SAW filters, regardless of the composition and structure of film electrodes. The breakdown of film electrodes under FR power seems to believe due to the fatigue of electrodes caused by repetitive cyclic stress of surface acoustic wave, which is amplified as RF power increases.

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Voltammetric Behaviors of Chemically Modified Electrodes Based on Zirconium Phosphonate Film

  • 홍훈기
    • Bulletin of the Korean Chemical Society
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    • 제16권9호
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    • pp.886-891
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    • 1995
  • Electroactive monolayers based on zirconium(Ⅳ) phosphonate film were prepared on gold and tin oxide electrodes by sequential layer-by-layer depostion technique. High transfer coefficient values and surface coverages of surface bound redox molecules were obtained from the electrochemical measurements of heterogeneous electron transfer rates for monolayer modified electrodes. 1,10-Decanediylbis(phosphonic acid) (DBPA) monolayer as insulating barrier was effective in blocking electron transfer. However, these film modified oxide electrode shows voltammetric behavior of diffusion/permeation process taking place at very small exposed area of modified electrode through channels due to structural defects within film when a very fast redox couple such as Ru(NH3)63+ is hired.

Carbon Nanotube Heater Generating High Heat Flux

  • Kang, Yong-Pil;Lee, Hyun-Chang;Kim, Duck-Jong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.530-530
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    • 2012
  • Many practical applications of carbon nanotubes(CNTs) have been proposed and there have been attempts to utilize CNT films as transparent electrodes for solar cells and displays. Our group has considered the use of the CNT film as a thin film heater (TFH) and proposed it for the first time and reported the thermal behavior of the TFH made of single walled CNTs. However, due to the relatively high electrical resistance of the CNT film, using the TFH in application areas requiring high heat flux has been a difficult problem. To overcome this obstacle, we adopted a 'branch electrodes' concept to increase the film conductance dramatically. If two branch electrodes are inserted into a TFH whose original electrical resistance is R, the total resistance will be reduced to R/9. Because of the increased aspect ratio, the resistance of each segmented TFH will be reduced to R/3. Furthermore, since they are connected in parallel, the total resistance reduces to R/9. This could be extended to n branch electrodes, and the total resistance of the film will be reduced to R/(n+1)2, if the resistance of electrodes are negligibly small. We fabricated the heaters with different number of branch electrodes. The number of branch electrodes of the fabricated heaters are 0, 2, 4, 8 and their electrical resistance are 101.4, 39.5, 20.0, $15.4{\Omega}$, respectively. We applied 20V to each heater and monitored the temperature variations. We could achieve high heating temperature even with low voltage supply. This technique could be applied to relevant industrial applications which need high power film heater.

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Zinc Tin Oxide 투명 박막트랜지스터의 특성에 미치는 소스/드레인 전극의 영향 (Influence of Source/Drain Electrodes on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors)

  • 마대영;최무희
    • 한국전기전자재료학회논문지
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    • 제28권7호
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    • pp.433-438
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    • 2015
  • Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

Antireflective ZTO/Ag bilayer-based transparent source and drain electrodes for highly transparent thin film transistors

  • 최광혁;김한기
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.110.2-110.2
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    • 2012
  • We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.

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소형 직접 메탄올 연료전지를 위한 나노 합금 전극 (Nanostructured Alloy Electrode for use in Small-Sized Direct Methanol Fuel Cells)

  • 박경원;최종호;박인수;남우현;성영은
    • 한국전기화학회:학술대회논문집
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    • 한국전기화학회 2003년도 연료전지심포지움 2003논문집
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    • pp.83-88
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    • 2003
  • PtRu alloy and $PtRu-WO_3$ nanocomposite thin-film electrodes for methanol electrooxidation were fabricated by means of a sputtering method. The structural and electrochemical properties of well-defined PtRu alloy thin-film electrodes were characterized using X-ray diffraction, Rutherford backscattering spectroscopy. X-ray photoelectron spectroscopy, and electrochemical measurements. The alloy thin-film electrodes were classified as follows: Pt-based and Ru-based alloy structure. Based on structural and electrochemical understanding of the PtRu alloy thin-film electrodes, the well-controlled physical and (electro)chemical properties of $PtRu-WO_3$, showed superior specific current to that of a nanosized PtRu alloy catalyst, The homogeneous dispersion of alloy catalyst and well-formed nanophase structure would lead to an excellent catalytic electrode reaction for high-performance fuel cells. In addition, the enhanced catalytic activity in nanocomposite electrode was found to be closely related to proton transfer in tungsten oxide using in-situ electrochemical transmittance measurement.

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ESTIMATION OF LOCAL LIQUID FILM THICKNESS IN TWO-PHASE ANNULAR FLOW

  • Lee, Bo-An;Yun, Byong-Jo;Kim, Kyung-Youn;Kim, Sin
    • Nuclear Engineering and Technology
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    • 제44권1호
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    • pp.71-78
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    • 2012
  • In many semi-empirical analyses of flow boiling heat transfer, an annular flow is often assumed as a model flow and the local liquid film thickness is a key parameter in the analysis. This work considers a simple electrical conductance technique to estimate the local liquid film thickness in two-phase annular flows. In this approach, many electrodes are mounted flush with the inner wall of the pipe. Voltage differences between two neighboring electrodes for concentric annular flows with various liquid film thicknesses are obtained before the main experiments and logged in a look-up table. For an actual application in the annual flow, voltage differences of neighboring electrodes are measured and then corresponding local film thicknesses are determined by the interpolation of the look-up table. Even though the proposed technique is quite simple and straightforward, the numerical and static phantom experiments support its usefulness.

BST Thin Film Multi-Layer Capacitors

  • Choi, Woo Sung;Kang, Min-Gyu;Ju, Byeong-Kwon;Yoon, Seok-Jin;Kang, Chong-Yun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.319-319
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    • 2013
  • Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

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플라스틱 필름형 침수센서 개발 (Development of Plastic Film Type Submersion Sensor)

  • 이영태;권익현
    • 반도체디스플레이기술학회지
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    • 제21권2호
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    • pp.107-111
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    • 2022
  • In this paper, a plastic film type submersion sensor capable of measuring submersion speed was developed. This submersion sensor is designed as a capacitive type, and it is a sensor that outputs the change in capacitance between the electrode of the submersion sensor and the grounded body as a voltage through a C-V(capacitance-voltage) converter. We developed an submersion sensor in which two electrodes of different lengths are connected in parallel to measure the submersion speed accurately by minimizing the influence of noise such as contamination. When both electrodes of the submersion sensor are exposed to water, the rate of change of water level suddenly increases, so the submersion speed is measured by measuring the time to this point. Since the difference in length between the two electrodes of the submersion sensor does not change in any case, it is possible to accurately measure the submersion speed.

Improvement on the Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Amorphous Oxide Multilayer Source/Drain Electrodes

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제17권3호
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    • pp.143-145
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    • 2016
  • In order to find suitable source and drain (S/D) electrodes for amorphous InGaZnO thin film transistors (a-IGZO TFTs), the specific contact resistance of interface between the channel layers and various S/D electrodes, such as Ti/Au, a-IZO and multilayer of a-IGZO/Ag/a-IGZO, was investigated using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes had good performance and low contact resistance due to the homo-junction with channel layer. The stability was measured with different electrodes by a positive bias stress test. The result shows the a-IGZO TFTs with a-IGZO/Ag/a-IGZO electrodes were more stable than other devices.