• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.248.1-248.1
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• 2014

We present results from an experimental study of conductivity change of poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) film according to the surface structuring. We demonstrate that the patterned structure was enhanced with approximately five times conductivity in comparison with non structure of PEDOT:PSS film. In order to patterning, we have fabricated polystyrene (PS) colloidal monolayer as a template with sphere diameter of 780nm and 1.8um. Structure has honeycomb shape and it provide shorter path way to flowing of electron. Pattern size was controlled by PS diameter and varied by Transformer Coupled Plasma (TCP) etching system. Conductivity was converted from sheet resistance which measured by 4-point prove. Film thickness was derived using Field Emission Scanning Electron Microscopy (FE-SEM) images.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.110-118
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• 2002

Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.92-96
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• 2009

A new precursor [$Zr(acac)_{3}(H_{2}O)_{2}$] was synthesized by Sonochemical technique and used to deposit thin $ZrO_{2}$ film on quartz and ceramic substrate via ultrasonic aerosol assisted chemical vapour deposition (UAACVD) at 300 ${^{\circ}C}$ in oxygen environment followed by annealing of the sample for 2-3 minutes at 500 ${^{\circ}C}$ in nitrogen ambient. The molecular structure of the precursor determined by single crystal X-ray analysis revealed that the molecules are linked through intermolecular hydrogen bonds forming pseudo six and eight membered rings. DSC and TGA/FTIR techniques were used to determine thermal behavior and decomposition temperature of the precursor and nature of evolved gas products. The optical measurement of annealed $ZrO_{2}$ film with tetragonal phase shows optical energy band gap of 5.01 eV. The particle size, morphology, surface structure and composition of deposited films were investigated by XRD, SEM and EDX.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.507-511
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• 2006

We investigated accelerated soft error rate (ASER) in static random access memory (SRAM) cells of thin film transistor (TFT) type. The effects on ASER by cell density, buried nwell structure, operational voltage, and polysilicon-2 layer thickness were examined. The increase in the operational voltage, and the decrease in the density of SRAM cells, respectively, resulted in the decrease of ASER values. The SRAM chips with buried nwell showed lower ASER than those with normal well structure did. The ASER decreased as the test distance from alpha source to the sample increased from $7{\mu}m\;to\;15{\mu}m$. As the polysilicon-2 thickness increased up to $1000\;{\AA}$, the ASER decreased exponentially. In conclusion, the best condition for low soft error rate, which is essential to obtain highly reliable SRAM device, is to apply the buried nwell structure scheme and to fabricate thin film transistors with the thick polysilicon-2 layer

• Journal of Satellite, Information and Communications
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• v.12 no.2
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• pp.11-14
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• 2017

In this paper, we introduce a method of light focusing effect using prism structure to solve optical discontinuity of conventional external signage LED panels. The prims structures were patterned on a transparent polycarbonate substrate with MEMS and femto-second laser process. We have confirmed that the patterned prism structures on the substrate made artificial LED lights on empty space between the panels by light guide effect of the structure. The artificial light's lateral positions were controlled by thickness of polycarbonate substrate. This cost effective prim patterned transparent film can be utilized on digital signage LED panels to achieve good optical communication.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.751-757
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• 2000

The r.f. power effect for Pt doping is investigated on structural and electrochemical properties of amorphous vanadium oxide(V$_2$O$_{5}$) film, grown by direct current (d.c.) magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction(GXRD) and high-resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with 10W r.f. power induces more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt target increases. large amount of Pt atoms incorporates into the amorphous V$_2$O$_{5}$ film and makes $\alpha$-PtO$_2$microcrystalline phase in the amorphous V$_2$O$_{5}$ matrix. These results suggest that the semiconducting $\alpha$-PtO$_2$ microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibillity of the amorphous V$_2$O$_{5}$ cathode film battery. film battery.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.467-470
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• 2009

• Cartoon and Animation Studies
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• s.9
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• pp.380-407
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• 2005

• Journal of the Korean Graphic Arts Communication Society
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• v.14 no.1
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• pp.1-15
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• 1996

In this paper, the preparation of lead zirconium titanate(PZT) thin film by sol-gel processing was descried. Thin film coated with thickness of 4${\mu}{\textrm}{m}$ on the stainless steel substrates using the multiple spin-coating process. The crystalline phases of PZT powder and film were investigated by X-ray diffraction pattern and PZT thin film has perovskite structure over 600 C annealing temperature. Corona charging characteristics of the ferroelectric PZT thin film at 600 C were investigated by electrophotographic measurement. A difference in the charging characteristics between positive and negative corona charging was found. The charge acceptance depended in the polarity of corona and the poling of film. According to the D-E hysteresis measurment, PZT thin film can be poled by corona charging without use of top electrode. The remnant polarization in the PZT thin film is generally in the order of 48$\mu$C/$\textrm{cm}^2$. From this results, the ferroelectric PZT thin film will be possible to apply for the add-on type imaging formation.