• 제목/요약/키워드: film structure

검색결과 3,903건 처리시간 0.036초

얇은 열산화-질화막의 특성평가 (Evaluation of Characteristics of Oxidized Thin LPCVD-$Si_{3}N_{4}$ Film)

  • 구경완;조성길;홍봉식
    • 전자공학회논문지A
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    • 제29A권9호
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    • pp.29-35
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    • 1992
  • Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

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무선 화학센서용으로 다결정 AlN 위에 성장된 나노결정질 ZnO 막의 특성 (Characteristics of nanocrystalline ZnO films grown on polyctystalline AlN for wireless chemical sensors)

  • 레티송;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.252-252
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    • 2009
  • In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at $h/\lambda$=0.0125 (h and $\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600 $^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500 $^{\circ}Cis$. The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM.

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Effects of Sputter Parameters on Electrochromic Properties of Tungsten Oxide Thin Films Grown by RF Sputtering

  • Nah, Yoon-Chae
    • 한국재료학회지
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    • 제21권12호
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    • pp.703-707
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    • 2011
  • The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the $Ar:O_2$ ratios were controlled with division into only an $O_2$ environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the $Ar:O_2$ ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher $O_2$ contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M $H_2SO_4$ solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

북한 기록영화 연구: 영화문헌의 의미생성 구조 (Studies on North Korean Documentary Films: Structures as to How Meanings of Film Literature are Made)

  • 김승
    • 한국콘텐츠학회논문지
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    • 제17권11호
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    • pp.82-89
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    • 2017
  • 이 글에서는 북한의 중요한 정치적 해였던 2015년에 제작된 영화문헌 <경애하는 최고사령관 김정은동지께서 인민군대사업을 현지에서 지도>의 의미생성 구조를 파악하여, 북한이 영화문헌을 통해 어떤 방식으로 북한 주민을 선동하고, 설득시키는지를 살펴보고자 했다. 분석 결과, 분석대상의 서사구조는 서론, 본론, 결론의 논증구조를 통해 이미 제시된 주제를 확증시키고 있다. 영상기법은 대중적 투쟁정신을 고취시키고 있고, 사운드는 대중에 응집력을 추동하는데 기여하고 있다. 이러한 점을 고려할 때 영화문헌의 의미체계는 첫째, 영상 실록의 형태를 띠며 대중이 이해하기 쉬운 구조를 택하고 있다. 둘째, 당의 선군영도를 따라 주체위업을 이루어 내자는 주제의식을 명확히 논증해 내고 있다. 셋째, 혁명 활동에 대한 수령의 근면성을 기록영상을 통해 착상, 배치함으로 늘 깨어 일하는 지도자상을 구축하고 있다. 북한에서 영화문헌은 혁명과 건설을 추동하는 무기이다. 이에 따라 모든 기록영화 창작가들은 영화문헌을 수령과 당의 영화문헌이 되게 해야 했다. 김정은 체제가 '사회주의문명국'이라는 사회적 비전을 내세워 영화문헌이라는 선전도구를 통해 통치력을 강화하고 있음을 알 수 있다.

유기금속화학증착법으로 유리기판 위에 성장된 산화아연 하이브리드 구조의 광학적 전기적 특성 (Optical and Electrical Properties of ZnO Hybrid Structure Grown on Glass Substrate by Metal Organic Chemical Vapor Deposition)

  • 김대식;강병훈;이창민;변동진
    • 한국재료학회지
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    • 제24권10호
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    • pp.543-549
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    • 2014
  • A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

뼈 재생을위한 폴리카프로락톤 필름에 대한 마이크로 캐스팅 및 플라즈마 에칭 (Effect of Micro Casting and Plasma-etching on Polycaprolactone Film for Bone)

  • 이재윤;양지훈;김근형
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.24-24
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    • 2018
  • One of the challenges in tissue engineering is the design of optimal biomedical scaffolds, which can be governed by topographical surface characteristics, such as size, shape, and direction. Of these properties, we focus on the effects of nano - to micro - sized hierarchical surface. To fabricate the hierarchical surface structure on poly(${\varepsilon}$-caprolactone) (PCL) film, we employed a nano/micro-casting technique (NCT) and modified plasma process. The micro size topography of PCL film was controlled by sizes of the micro structures on lotus leaf. Also, the nano-size topography and hydrophilicity of PCL film were controlled by modified plasma process. After the plasma treatment, the hydrophobic property of the PCL film was significantly changed into hydrophilic property, and the nano-sized structure was well developed, as increasing the plasma exposure time and applied power. The surface properties of the modified PCL film were investigated in terms of initial cell morphology, attachment, and proliferation using osteoblast-like-cells (MG63). In particular, initial cell attachment, proliferation and osteogenic differentiation in the hierarchical structure were enhanced dramatically compared to those of the smooth surface.

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비정질/마이크로 탠덤 구조형 실리콘 박막 태양전지 ([ $a-Si:H/{\mu}c-Si:H$ ] thin-film tandem solar cells)

  • 이정철;송진수;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2006년도 춘계학술대회
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    • pp.228-231
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    • 2006
  • This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline ${\mu}c-Si:H$ single junction and $a-Si:H/{\mu}c-Si:H$ tandem solar cells. The major difference of a-Si:H and ${\mu}c-Si:H$ cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to ${\mu}c-Si:H$ solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.

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Mechanisms involved in modification of film structure and properties in ICP assisted dc and pulsed dc sputtering

  • Kusano, Eiji
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.59.2-59.2
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    • 2015
  • Modification of film structure and properties in inductively-coupled plasma (ICP) assisted dc and pulsed dc sputtering has been reported by Oya and Kusano [1] and by Sakamoto, Kusano, and Matsuda [2], showing drastic changes in films structure and properties by the ICP assistance in particular to the pulsed dc discharge. Although mechanisms involved in the modification has been reported to be the increase in energy transferred to the substrate, details of effects of low-energy ion bombardment on the modification and origin of an anomalous increase in the ion quantity by the ICP assistance to the pulsed dc discharge have not been discussed. In this presentation, mechanisms involved in film structure and property modification in ICP assisted dc and pulsed dc sputtering, in which a number of low-energy ions are formed, will be discussed based on ion energy distribution as well as effectiveness of energy transfer to the substrate by low energy particles [3]. The results discussed in this presentation will emphasize the fact that the energetic particles playing an important role in the film structure modification are those to be deposited, but not those of inert gas, when their energies range in less than 100 eV in the pressure range of magnetron sputtering.

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The Characterization of ZnO Hybrid Structure Grown by Metal-organic Chemical Vapor Deposition

  • 김아영;장삼석;이도한;임소영;변동진
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.37.2-37.2
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    • 2011
  • The growth of three-dimensional ZnO hybrid structures by metal-organic chemical vapor deposition was controlled through their growth pressure. Vertically aligned ZnO nanorods were grown on c-plane sapphire substrate at $600^{\circ}C$ and 400 Torr. ZnO film was then formed in-situ on the ZnO nanorods at $600^{\circ}C$ and 10 Torr. High-resolution X-ray diffraction and transmission electron microscopy measurements showed that the ZnO film on the nanorods/sapphire grew epitaxially, and that the ZnO film/nanorods hybrid structures had well-ordered wurtzite structures. The hybrid ZnO structure was shown to be about 5 ${\mu}m$ by field-emission scanning electron microscopy. The hybrid structure showed better crystalline quality than mono-layer film on sapphire substrate. Consequently, purpose of this work is developing high quality hybrid epi-growth technology using nano structure. These structures have potential applicability as nanobuilding blocks in nanodevices.

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스퍼터 장비의 설계 룰을 찾기 위한 Si박막 특성 변화 연구 (A Study on the Change of Si Thin Film Characteristics to Find Design Rules for Sputtering Equipment)

  • 김보영;강서익
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.100-105
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    • 2020
  • Recently, as display and semiconductor devices have been miniaturized and highly integrated, there is a demand for optimization of the structural characteristics of the thin film accordingly. The sputtering device has the advantage of stably obtaining a desired thin film depending on the material selected for the target. However, due to the structural characteristics of the sputtering equipment, the structural characteristics of the film may be different depending on the incidence angle of the sputtering target material to the substrate. In this study, the characteristics of the thin film material according to the scattering angle of the target material and the incidence position of the substrate were studied to find the optimization design rule of the sputtering equipment. To this end, a Si thin film of 1 ㎛ or less was deposited on the Si(100) substrate, and then the microstructure, reflectance, surface roughness, and thin film crystallinity of the thin film formed for each substrate location were investigated. As a result of the study, it was found that as the sputter scattering angle increased and the substrate incident angle decreased, the gap energy along with the surface structure of the thin film increased from 1.47 eV to 1.63 eV, gradually changing to a non-conductive tendency.