• Carbon letters
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• v.12 no.4
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• pp.207-217
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• 2011

We discuss the influence of few-walled carbon nanotubes (FWCNTs) treated with nitric acid and/or sulfuric acid on field emission characteristics. FWCNTs/tetraethyl orthosilicate (TEOS) thin film field emitters were fabricated by a spray method using FWCNTs/TEOS sol one-component solution onto indium tin oxide (ITO) glass. After thermal curing, they were found tightly adhered to the ITO glass, and after an activation process by a taping method, numerous FWCNTs were aligned preferentially in the vertical direction. Pristine FWCNT/TEOS-based field emitters revealed higher current density, lower turn-on field, and a higher field enhancement factor than the oxidized FWCNTs-based field emitters. However, the unstable dispersion of pristine FWCNT in TEOS/N,N-dimethylformamide solution was not applicable to the field emitter fabrication using a spray method. Although the field emitter of nitric acid-treated FWCNT showed slightly lower field emission characteristics, this could be improved by the introduction of metal nanoparticles or resistive layer coating. Thus, we can conclude that our spray method using nitric acid-treated FWCNT could be useful for fabricating a field emitter and offers several advantages compared to previously reported techniques such as chemical vapor deposition and screen printing.

• Korean Chemical Engineering Research
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• v.47 no.4
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• pp.476-480
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• 2009

A polymer composite electrolyte of a blend of poly(methyl methacrylate)(PMMA) and poly(ethylene oxide) (PEO) as a host polymer, the ethylene carbonate as a solvent, and $LiClO_4$ as a salt was studied. The crystallinity of the polymer electrolytes was evaluated using differential scanning calorimeter(DSC). The ionic conductivity of the polymer electrolytes was measured by frequency response analyzer(FRA) method. The effect of PEO/PMMA blend ratios on the ionic conduction in these electrolytes was investigated. The electrolyte films showed a phase separation due to immiscibility of the PMMA with the PEO. The PMMA-rich phase and the PEO-rich phase were produced during a film casting. The ionic conductivity of blend electrolyte was dependent on the content of PMMA and showed the highest value at 20 wt.%. However, when PMMA content exceeds 20 wt.%, the ionic conductivity was decreased due to the slow ionic transport through the PMMA-rich phase.

• Journal of the Korean Electrochemical Society
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• v.15 no.4
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• pp.236-241
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• 2012

It is widely recognized that it is hard to prepare hydrophilic graphite nanoparticles because of their high crystallinity and inert characteristics. In this study, we successfully synthesized the hydrophilic graphite nanoparticles by using liquid phase pulsed laser ablation method which has been actively employed for the thin film deposition up to now. The obtained hydrophilic graphite showed an ultra-high dispersion stability in water, because the hydrophilic functional groups like carboxyl and carbonyl group was simultaneously introduced onto the graphite surface with the nanoparticle formation, as confirmed by FT-IR and zeta potential measurements. Finally, a markedly enhanced gas sensing ability for acetone was shown in comparison with the conventional carbon black for the carbon polymer composite sensor with polyethyleneglycol (PEG).

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.28-28
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• 2010

This study realized low-temperature crystallization process of the $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) thin films without thermal damage of substrate using excimer laser annealing (ELA) and structural and electrical characteristics were investigated. The amorphous BST thin films were prepared on Pt/Ti/$SiO_2$/Si substrate by sol-gel method at $250^{\circ}C$. The ELA was carried out using KrF excimer laser which provided excitation wavelength of 248 nm. The beam homogenizing system was used in order to homogenize beam shape of Gaussian fit. The XRD and SEM were used to analyze structural characteristics and the microwave capacitance, dielectric loss and tunability of the BST films were measured by a symmetrical stripline resonator method with shorted end. Consequently, the crystallinity of BST thin films were improved after ELA process and RF tunable capacitor was demonstrated at low temperature below $300^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2547-2552
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• 2010

CdS nano-particulate films were prepared at the air/water interface under Langmuir monolayers of arachidic acid (AA) via interfacial reaction between $Cd^{2+}$ ions in the subphase and $H_2S$ molecules in the gaseous phase. The films were made up of fine CdS nanoparticles with hexagonal Wurtzite crystal structure after reaction. It was revealed that the formation of CdS nano-particulate films depends largely on the experimental conditions. When the films were ripened at room temperature or an increased temperature ($60^{\circ}C$) for one day, numerous holes were appeared due to the dissolution of smaller nanoparticles and the growth of bigger nanoparticles with an improved crystallinity. When the films were ripened further, CdS rodlike nanoparticles with cubic zinc blende crystal structure appeared due to the re-nucleation and growth of CdS nanoparticles at the stacking faults and defect structures of the hexagonal CdS grains. These structures were characterized by transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and X-ray diffraction (XRD). These results declare that CdS semiconductor nanoparticles formed at the air/water interface change their morphologies and crystal structures during the ripening process due to dissolution and recrystallization of the particles.

• Journal of the Korean Magnetics Society
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• v.25 no.2
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• pp.43-46
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• 2015

$Si(100){\backslash}200nm$ $SiO_2{\backslash}5nm$ $Ta{\backslash}5nm$ $MgO{\backslash}35nm$ $Fe_3O_4$ multi-layers were prepared by using RF-sputtering and ultra-high vacuum molecular beam epitaxy (UHV-MBE) techniques. After post-annealing the multi-layers at $500^{\circ}C$ for 1 hour under the high vacuum of ${\sim}1{\times}10^{-6}Torr$, we observed ferromagnetic properties at room temperature as well as the Verwey transition which is the typical features of magnetite crystals formed. We have carried out a comparative study of the effect of Ta buffered layer on the crystallinity and magnetic properties of $Fe_3O_4$ thin films prepared under different growth and annealing conditions.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.361-367
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• 1998

$\alpha$-Sexithiophene ($\alpha$-6T) thin films were deposited by organic molecular beam deposition (OMBD) technique. The $\alpha$-6T was synthesized and purified by the sublimation method. The thin films of the $\alpha$-6T were deposited under various deposition conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecular orientation, crystallinity, and surface morphology of $\alpha$-6T films were investigated with angle-resolved UV/visible absorption spectroscopy, X-ray diffractometry (XRD), and atomic force microscopy (AFM). It was found that the crystalline structure of $\alpha$-6T films was monoclinic and independent uppon substrate temperature, deposition rate, and deposition pressure. On the other hand, the $\alpha$-6T molecules in the film deposited at a low deposition rate, higher substrate temperature, and under a high vacuum tended to be aligned perpendicular to the substrate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.36-43
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• 2000

The sulfur pressure and TRA(rapid thermal annealing) conditions of the fabricated SrS:CuCl TFEL devices were optimized to improve blue color luminance. The thickness of the phosphor layer of SrS:CuCl TFEL devices fabricated by electron beam deposition system was 6000 ~ 8000 ${\AA}$. The fabricated TFEL devices were annealed at 800 $^{\circ}C$ for 3 min. It was shown that the crystallinity of SrS:CuCl phosphor was improved by an increase in RTA temperature and RTA time. Blue color was emitted from the TFEL device with emission peak wavelength of 468 nm and 500 nm. The CIE color coordinates were x = 0.21, y = 0.33. The luminance($L_{40}$) of TFEL device strongly depended on the sulfur pressure of deposition chamber and increased from 262 cd/$m^2$ to 728 cd/m2 as the sulfur pressure increased from $8{\times}10^{-6}$ torr to $2{\times}10^{-5}$ torr.