• Textile Coloration and Finishing
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• v.2 no.4
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• pp.231-236
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• 1990

The diffusion coefficient of C.I. Disperse Red 4 in the dyeing of carrier-pretreated poly (ethylene terephthalate) film was Investigated by Sekido's film-rolled method. From the result it was shown that the diffusion coefficient increases exponentially with the content-ration of carrier in the film, and, for the films containing same concentration of carrier, the carrier effect was enhanced with the molar volume of the carriers. The greater carrier effect was accompanied by the decrease in diffusion activation energy and entropy, which shows that the carrier with larger molar volume plasticizes PET film to more extent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.343-346
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• 1997

This paper presents the basic characteristics of Cr thin-film, which were deposited on glass by DC magnetron sputtering. The optimized deposition condition of Cr thin-film strain gauges were input power 7w/cm$^2$and the Ar working pressure was 9mtorr. GF(Gauge Factor), TCR(Temperature Coefficient of Resistance) and TCS(Temperature Coefficient of Sensitivity) of Cr thin-film strain gauges were 5.86, 400 ppm/$^{\circ}C$ and 0 ppm/$^{\circ}C$, respectively.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Tribology and Lubricants
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• v.17 no.2
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• pp.97-108
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• 2001

This paper describes the development of performance analysis technique for a leaf-type gas lubricated fail bearing. Stiffness coefficient and frictional damping due to the slip between all contacts of leaves are evaluated for various leaf structures. The fluid film thickness and pressure distribution are computed but it is not considered the elastic deformation by film pressure. The analysis results include the effects that the curvature radius and the length of leaf and the friction coefficient have on the static and dynamic characteristics of the foil bearings.

• Tribology and Lubricants
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• v.24 no.3
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• pp.147-153
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• 2008

The effect of oil supply pressure on the performance of vapor cavitated short squeeze film dampers is examined. Vapor cavitation is characterized by film rupture occurring as a result of evaporating oils. The pressure of vapor cavity in the film is almost zero in absolute pressure and nearly constant. Pan's model about the shape of vapor cavity is utilized for studying the effect of vapor cavitation on the damping capability of a short squeeze film damper. As the level of oil supply pressure is increasing, vapor cavitation is suppressed so that the direct damping coefficient increases and the cross coupled damping coefficient decreases. Futhermore, the analysis of the unbalance responses of a rigid rotor supported on cavitated squeeze film dampers shows that a significant reduction in rotor amplitude and force transmissibility is possible by controlling the oil supply pressure into short squeeze film dampers.

• International Journal of Air-Conditioning and Refrigeration
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• v.8 no.2
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• pp.69-79
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• 2000

Falling film rectification involves simultaneous heat and mass transfer between vapor and solution film. In the present work, the adiabatic rectification process of ammonia-water vapor by the falling solution film on the vertical plate was investigated. The continuity momentum, energy and diffusion equations for the solution film and the vapor mixture were formulated in integral forms and solved numerically, The model could predict the film thickness, the pressure gradient, and the mass transfer rate. The effects of Reynolds number and ammonia concentration of solution and vapor mixture, rectifier length, and the enhancement of mass transfer coefficient in each phases were investigated. The stripping of water in vapor mixture occurred near the entrance of ammonia solution, which imposed the proper size of an adiabatic rectifier. Rectifier efficiency increased as film Reynolds number increased and as vapor mixture Reynolds number decreased. The improvement of rectifier efficiency was significant with the enhancement of mass transfer coefficient in falling film.

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.624-629
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• 2001

An experimental study was performed to investigate adiabatic wall temperature and heat transfer coefficient around on a module with longitudinal fin heat sink cooled by forced air flow. In the first method, inlet air flow(1-7m/s) and input power(3-5W) was varied after a heated module were placed on an adiabatic floor($320{\times}550{\times}1mm^{3}$). An adiabatic wall temperature was determinated to use liquid crystal film(LCF). In the second method to determinate heat transfer coefficient, inlet air flow(1-7m/s) and the heat flux of rubber heater($0.031-0.062\;W/cm^{2}$) was varied after an adiabatic module was placed on rubber heater covering up an adiabatic floor. In addition, surface oil-film visualization were performed to characterize the macroscopic flow-field around a module.

• Journal of Electrical Engineering and Technology
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• v.11 no.2
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• pp.455-462
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• 2016

The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10⁻¹⁷ V.cm²). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

• Solar Energy
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• v.18 no.4
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• pp.49-57
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• 1998

In this study, thin film evaporation of water on a horizontal plain tube is experimentally investigated. At a high heat flux, boiling of water is noticed inside the film. Once boiling occurs, evaporation heat transfer coefficient increases as the heat flux increases. In the non-boiling region, however, the heat transfer coefficient remains uniform irrespective of the heat flux. In this region, the heat transfer coefficient increases as the film flow rate increases. Comparison with existing correlations is also provided.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.182-186
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• 2005

In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.