• Journal of Astronomy and Space Sciences
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• v.21 no.2
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• pp.93-100
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• 2004

We have investigated characteristic solar wind dynamics associated with relativistic electron events at geosynchronous orbit. Most of the events for April, 1999 through December, 2002 are found to be accompanied by a prolonged solar quiet period which is characterized as low solar wind density, weak interplanetary magnetic field (IMF), and fast alfvenic fluctuations in IMF $B_z$. In a typical relativistic event, electron fluxes begin to increase by orders of magnitude when solar wind parameters drop to low values (e.g., $n_{sw}∼5 cm^{-3}$ and ｜$B_{IMF}$∼5 nT) after sharp peaks. Then the elevated electron fluxes stay at the high level during the solar quiet period. This observation may suggest the following scenario for the occurrence of a geosynchronous relativistic event: (ⅰ) Quiet solar winds can yield a stable and more dipole-like magnetospheric configurations in which the geosynchronous orbit locates well inside the trapping boundary of the energetic electrons. (ⅱ) If a large population of MeV electrons are generated (by whatever acceleration process(es)) in the inner magnetosphere, they can be trapped and effectively accumulated to a high intensity. (ⅲ) The high electron flux can persist for a number of days in the geosynchronous region as long as the solar wind dynamics stays quiet. Therefore the scenario indicates that the occurrence of a relativistic event would be a result of a delicate balance between the effects of electron acceleration and loss. In addition, the sensitive dependence of a relativistic event on the solar wind conditions makes the prediction of solar wind variability as important as understanding of electron acceleration processes in the forecast of a relativistic event.

• Archives of Pharmacal Research
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• v.25 no.1
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• pp.11-24
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• 2002

The antitumor antibiotic (+)-CC-1065 can alkylate N3 of guanine in certain sequences. A previous high-field $^1H$ NMR study on the$(+)-CC-1065d[GCGCAATTG*CGC]_2$ adduct ($^*$ indicates the drug alkylation site) showed that drag modification on N3 of guanine results in protonation of the cross-strand cytosine [Park, H-J.; Hurley, L. H. J. Am. Chem. Soc.1997, 119,629]. In this contribution we describe a further analysis of the NMR data sets together with restrained molecular dynamics. This study provides not only a solution structure of the (+)-CC-1065(N3- guanine) DNA duplex adduct but also new insight into the molecular basis for the sequence- specific interaction between (+)-CC-1065 and N3-guanine in the DNA duplex. On the basis of NOESY data, we propose that the narrow minor groove at the 7T8T step and conformational kinks at the junctions of 16C17A and 18A19T are both related to DNA bending in the drugDNA adduct. Analysis of the one-dimensional $^1H$ NMR (in $H_2O$) data and rMD trajectories strongly suggests that hydrogen bonding linkages between the 8-OH group of the (+)-CC-1065 A-sub-unit and the 9G10C phosphate via a water molecule are present. All the phenomena observed here in the (+)-CC-1065(N3-guanine) adduct at 5'$-AATTG^*$are reminiscent of those obtained from the studies on the (+)-CC-1065(N3-adenine) adduct at $5'-AGTTA^*$, suggesting that (+)-CC-1065 takes advantage of the conformational flexibility of the 5'-TPu step to entrap the bent structure required for the covalent bonding reaction. This study reveals a common molecular basis for (+)-CC-1065 alkylation at both $5'-TTG^*$ and $5'-TTA^*$, which involves a trapping out of sequence-dependent DNA conformational flexibility as well as sequence-dependent general acid and general base catalysis by duplex DNA.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.117-127
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• 1994

In this paper, electrical and reliability properties of N$_2$O oxides, grown at the temperature of 95$0^{\circ}C$ and 100$0^{\circ}C$ to 74$\AA$, and 82$\AA$. respectively, using NS12TO gas in a conventional furnace, have been compared with those of pure oxide grown at the temperature of 850 to 84$\AA$ using O$_2$ gas. Initial IS1gT-VS1gT characteristics of N$_2$O oxides were similar to those of pure oxide, and reliability properties of N$_2$O oxides, such as charge trapping, interface state density and leakage current at low electric field under F-N stress, were improved much better than those of pure oxide. But, with increasing capacitor area. TDDB characteristics of N$_2$O oxides were more degraded than those of pure oxide and this degradation of TDDB characteristics was more severe in 100$0^{\circ}C$ N$_2$Ooxide than in 95$0^{\circ}C$ N$_2$O oxide. The improvement of reliability properties excluding TDDB in N$_2$Ooxides was attributed to the hardness of the interface improved by nitrogen pile-up at the interface of Si/SiO$_2$, but on the other hand, the degradation of TDDB characteristics in N$_2$O oxides was obsered due to the increase of local thinning spots caused by excessive nitrogen at interface during the growth of N$_2$O oxides.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.9
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• pp.1627-1634
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• 2017

In this work, a junctionless transistor with different film thickness of amorphous InGaZnO has been fabricated and it's instability has been analyzed with different film thickness under positive and negative gate stress as well as light illumination. It was found that the threshold voltage shift and the variation of drain current have been increased with decrease of film thickness under the condition of gate stress and light illumination. The reasons for the observed results have been explained by stretched-exponential model and device simulation. Due to the reduced carrier trapping time with decrease of film thickness, electrons and holes can be activated easily. Due to the increase of vertical channel electric field reaching the back interface with decrease of film thickness, more electrons and holes can be accumulated in back interface. When one decides the film thickness for the fabrication of junctionless transistor, the more significant device instability with decrease of film thickness should be consdered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.20-20
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• 2007

Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an $Al_2O_3$ layer which was semi cylindrically coated on a single ZnO nanowire. The family of $I_{DS}-V_{GS}$ curves for the double sweep of the gate voltage at $V_{DS}$ = 1 V was obtained. The device decorated with nanoparticles shows giant hysterisis loops with ${\Delta}V_{th}$ = 2 V, indicating a significant charge storage effect. Note that the hysterisis loops are clockwise which result from the tunneling of the charge carriers from the nanowire into the nanoparticles. On the other hand, the device without nanoparticles shows a negligible countclockwise hysterisis loop which reveals that the influence of oxide trap charges or mobile ions is negligible. Therefore, the charge storage effect mainly comes from the nanoparticles decorated on the nanowire, which obviously demonstrates that the top-gate single ZnO nanowire-based FETs decorated with Au nanoparticles are the good candidate for the application in the nonvolatile memory devices of next generation.

• Journal of The Korean Society of Agricultural Engineers
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• v.64 no.4
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• pp.1-10
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• 2022

A vegetative filter strip (VFS) is one of the best management practices (BMPs) to reduce pollutant loads. This study aims to assess the effectiveness of VFS in dense upland field areas. The study areas are agricultural fields in the Maedae (MD), Gaa (GA), and Jaun (JU) watersheds, where severe sediment yields have occurred and the Korean government has designated them as non-point management regions. The agricultural fields were divided into three or four clusters for each watershed based on their slope, slope length, and area (e.g., MD1, MD2). To assess the sediment trapping (STE) and pesticide reduction efficiency (PRE) of VFS, the Vegetative Filter Strip Modeling System (VFSMOD) was applied with three different scenarios (SC) (SC1: VFS with rye vegetation; SC2: VFS with rye vegetation and a gentle slope in VFS range; and SC3: VFS with grass mixture). For SC1, there were relatively short slope lengths and small areas in the MD1 and GA3 clusters, and they showed higher pollutant reduction (STE>50%, PRE>25%). For SC2 and SC3, all clusters in GA and some clusters (MD1 and MD3) in MD show higher pollutant reduction (>25%), while the uplands in JU still show a lower pollutant (<25%). With correlation analysis between geographic characteristics and VFS effectiveness slope and slope length showed relative higher correlations with the pollutant efficiency than a area. The results of this study implied that slope and slope length should be considered to find suitable upland conditions for VFS installations.

• Journal of the Korean institute of surface engineering
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• v.56 no.3
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• pp.208-218
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• 2023

Photocatalysts are advanced materials which accelerate the photoreaction by providing ordinary reactions with other pathways. The catalysts have various advantages, such as low-cost, low operating temperature and pressure, and long-term use. They are applied to environmental and energy field, including the air and water purification, water splitting for hydrogen production, sterilization and self-cleaning surfaces. However, commercial photocatalysts only absorb ultraviolet light between 100 and 400 nm of wavelength which comprises only 5% in sunlight due to the wide band gap. In addition, rapid recombination of electron-hole pairs reduces the photocatalytic performance. Recently, studies on blackening photocatalysts by laser, thermal, and plasma treatments have been conducted to enhance the absorption of visible light and photocatalytic activity. The disordered structures could yield mid-gap states and vacancies could cause charge carrier trapping. Herein, liquid phase plasma (LPP) is adopted to synthesize Ag-doped black ZnO for the utilization of visible-light. The physical and chemical characteristics of the synthesized photocatalysts are analyzed by SEM/EDS, XRD, XPS and the optical properties of them are investigated using UV/Vis DRS and PL analyses. Lastly, the photocatalytic activity was evaluated using methylene blue as a pollutant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• Korean journal of applied entomology
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• v.44 no.1 s.138
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• pp.31-36
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• 2005

Adoxophyes spp. are the major rests of a pear. The larvae attack both leaves and fruits. (Z)-9-tetradecenyl acetate (Z9-14:Ac), (Z)-11-tetradecenyl acetate (Z11-14:Ac), (E)-11-tetradecenyl acetate (E11-14:Ac) and 10-methyldodecyl acetate (10me-12:Ac) have been reported as the sex pheromone components of the genus Adoxophyes. Our objective was to determine the difference in sex pheromone composition of three different A. spp. populations each from Cheonan, Sangju, and Naju area orchards in Korea. Gas chromatography (GC) analyses of pheromone gland extracts of virgin females confirmed the presence of two compounds (Z9-14:Ac and Z11-14:Ac) in Cheonan and Sangju populations, and four compounds (Z9-14:Ac, Z11-14:Ac, E11-14:Ac and tome-12:Ac) in Naju population. The Z9-14:Ac and Z11-14:Ac were detected in the ratio of 80:20 in the Cheonan population and 3:97 in the Sangju population. Females of Naju population produced sex pheromone blend consisting of Z9-14:Ac, Z11-14:Ac, E11-14:Ac and 10me-12:Ac at a ratio of 31:62:6:1. Field trapping tests in pear orchards with Z9-14:Ac and Z11-14:Ac indicated that maximum captures of the male were obtained with traps baited by 80:20 in Cheonan, 10:90 in Sangju, and 30:70 in Naju. These results suggest that there are remarkable geographical variations in the sex pheromone composition of A. spp. in pear orchards in Korea, and taxonomic classification of these species must be carefully assessed.

• The Korean Journal of Ecology
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• v.23 no.1
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• pp.65-70
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• 2000

Field collections were made from six gypsy moth (Lymantria dispar L.) Populations in Kyonggy and Cheju areas during the period 1987∼1997. Characteristics of gypsy moth populations at different phases were examined in terms of egg mass density, relative larval density, plant damage, and fecundity. Males captured in pheromone trap were recorded, and we examined if there was a relationship between numbers captured and the population density during the following generation. Egg mass density was closely related with larval density, and furthermore these densities were correlated with the level of plant damage, indicating that larval dispersion was limited in oviposition areas. The gypsy moth population cycle was short in Korea with the period from population development to innocuous level usually lasting 2∼3 years. Male caught by pheromone trap (mean number of males caught per trap per day in peak emergence period) was positively correlated with egg mass densities in the following season (r²=0.93). A low fecundity was detected from outbreak populations which accompanied defoliation. Fecundity of gypsy moth ranged from 538 to 601 at other phases.