• Journal of Information Display
• /
• 제7권1호
• /
• pp.1-6
• /
• 2006

A 10" carbon nanotube field emission display device was fabricated with a novel structure with a hopping electron spacer (HES) by screen printing technique. HES plays a role of preventing the broadening of electron beams emitted from carbon nanotubes without electrical discharge during operation. The structure of the novel tetrode is composed of carbon nanotube emitters on a cathode electrode, a gate electrode, an extracting electrode coated on the top side of a HES, and an anode. HES contains funnel-shaped holes of which the inner surfaces are coated with MgO. Electrons extracted through the gate are collected inside the funnel-shaped holes. They hop along the hole surface to the top extracting electrode. In this study the effects of the addition of HES on emission characteristics of field emission display were investigated. An active ozone treatment for the complete removal of residues of organic binders in the emitter devices was applied to the field emission display panel as a post-treatment.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.181-181
• /
• 2010

Few-walled carbon nanotubes (FWNTs)-based field emitters with long term stability are fabricated by using a spray method. Tetraethylorthosilicate (TEOS) sol as a binder was mixed with dispersed solution of FWNTs to enhance the adhesion of FWNTs on the cathode substrate. Due to the strong intermolecular interaction of TEOS to the functional groups attached on CNTs and substrate, CNTs are tightly adhered to the cathode electrode when heat treatment is performed at $150^{\circ}C$ for 1 hour, resulting in a stable electron emission of CNT emitters for long time. Excellent field emission characteristics were exhibited, with a large field enhancement factor and low turn-on voltage, comparable to those of CNT emitters fabricated by a screen printing of CNT paste. Therefore, FWNTs / TEOS hybrid films could be utilized as an alternative for the efficient and reliable field emitters.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
• /
• pp.66-66
• /
• 1999

• ETRI Journal
• /
• 제24권4호
• /
• pp.290-298
• /
• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• Journal of Information Display
• /
• 제2권3호
• /
• pp.44-47
• /
• 2001

The extracted field emission current can be used to controllably heat microfabricated cold field emission cathode tips. The heating can be sufficient to smooth and recrystallize the tip surface by surface self-diffusion, and at least partially clean the surface of contaminants by thermal desorption. Self-heating not only allows for the achievement and maintenance of stable emission characteristics, but can be used to make the current-voltage characteristics of microfabricated field emitter tips nearly identical to one another. The resulting improvement in emission uniformity will allow for more reliable array operation at increased electron emission current densities.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.681-684
• /
• 2002

To investigate thermal effects of silicon field emitter, we fabricated and characterized single silicon tips with various tip radii, which generate different joule heating. Through I-V and stability tests, the changes of emission characteristics and tip structures due to different tip heating were observed and discussed. From the results, we confirmed that the changes of emission characteristics due to thermal effects in silicon emitter could occur at relatively small emission currents and concluded that the thermal effects should be also considered under normal operation condition above 1 ${\mu}A$.

• 센서학회지
• /
• 제5권2호
• /
• pp.9-14
• /
• 1996

N 형의 실리콘 기판위에 수평형의 전계 방출 배열 구조를 갖는 진공 자기 센서를 제작하고 그의 자기적 특성을 측정하였다. 소자는 수평으로 구성된 팁 사이의 간격이 $10\;{\mu}m$인 100 개의 전계 방출 팁, 게이트 그리고 분리된 양극 구조로 이루어져 있다. 에미터 전극으로부터의 전자 방출 특성은 Fowler-Nordheim 턴널링 이론을 따른다. 제작된 센서는 좋은 직선 특성과 825 %/T 의 높은 감도를 보여주었다.

• 전자공학회논문지A
• /
• 제33A권7호
• /
• pp.171-175
• /
• 1996

Gate insulator for Si field emitter is usually formed by e-beam evaporation. However, the evaported oxide requires densification for a stable process and a reduction of gate leakage which results from its Si-rich and nonstoicheiometric structure. In this study, we have developed the process technology able to densify the evaporated oxide in H$_{2}$O ambient. Using this process, we have fabricted thefield emitter array with 625 emitters per pixel, of which gate hole diameter is 1.4.mu.m, for the pixel, anode current of 14.3.mu.A was extracted at a gate bias of 100V and gate leakage was about 0.27% of the total emission current.

• 한국재료학회지
• /
• 제10권2호
• /
• pp.124-127
• /
• 2000

Si FEA로부터 tip의 표면을 Ti 금속으로 silicidation한 새로운 3극형 Ti-silicided Si FEA를 제작하고 이의 전계 방출특성을 조사하였다. 제작된 소자에서 단위 pixel(pixel area : $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$, tip array : $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$)을 통해 측정된 전계 방출 특성은 $10^8Torr$의 고진공 상태에서 turn-on 전압이 약 70V로, 아노드 방출전류의 크기와 current degradation이 $V_A=500V,\;V_G=150V$ 바이어스 아래에서 각각 2nA/tip와 0.3%/min로 나타났다. 3극형 Ti-silicided Si FEA의 낮은 turn-on 전압과 높은 전류안정성은 Si tip 표면에 형성된 실리사이드 박막의 열화학적 안정성과 낮은 일함수에 기인하는 것으로 판단된다.

• 한국재료학회지
• /
• 제10권4호
• /
• pp.301-304
• /
• 2000

Si FEA로 부터 tip의 표면을 Co 금속으로 silicidation한 새로운 3극형 Co-silicided Si FEA를 제작하고 이의 전계 방출특성을 조사하였다. $10^{-8}Torr$의 고진공상태에서 제작된 소자의 단위 pixel(pixel 면적 : $250{\mu\textrm{m}}{\times}250{\mu\textrm{m}}$, tip 어레이 : $45{\times}45$)를 통해 측정된 turn-on 전압은 약 35V로, 아노드 전류는 $V_A=500V,\;V_G=55V$ 바이어스 아래에서 약 $1.2{\mu\textrm{A}}(0.6nA/tip)$로 나타났다. 제작된 소자는 초기 과도상태를 제외하면 장시간의 동작을 통해 전계방출 전류의 감소없이 매우 안정된 전기적 특성을 나타내었다. Co-silicided Si FFA 의 낮은 turn-on 전압과 높은 전류안전성은 Si tip 표면에 형성된 실리사이드 박막의 열화학적 안전성과 낮은 일함수에 기인하는 것으로 판단된다.