• 제목/요약/키워드: field emission emitter

검색결과 184건 처리시간 0.035초

CNT를 이용한 무수은 면광원 안정기 개발 (The Ballast for Field Emission Lamp with CNT Emitter)

  • 박동혁;하석진;정혜만;김종현;백주원;유동욱;송의호
    • 전력전자학회논문지
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    • 제14권1호
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    • pp.31-37
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    • 2009
  • 본 논문에서는 전계방출 원리를 이용하여 이미터로서의 성능이 뛰어난 탄소나노튜브 (Carbon Nano Tube)를 이용한 전계방출 면광원용 안정기를 제안한다. 안정기는 고전압 직류전압 부분과 양극의 펄스를 생성하는 부분으로 구성되어 있다. 탄소나노튜브를 이용한 전계방출 램프는 3가지의 전극 (애노드, 게이트, 캐소드)으로 구성되어 있는데, 애노드와 게이트 사이에는 직류 고전압이 공급되고 게이트와 캐소드 사이에는 양극의 펄스가 공급된다. 램프 및 안정기를 보호하기 위하여 과전류, 과전압, 과온도에 대한 보호 기능을 추가하였고, 실험을 통하여 제안된 방식이 탄소나노튜브를 이용한 램프 구동을 위한 적합함을 검증하였다.

Fabrication of Field-Emitter Arrays using the Mold Method for FED Applications

  • Cho, Kyung-Jea;Ryu, Jeong-Tak;Kim, Yeon-Bo;Lee, Sang-Yun
    • Transactions on Electrical and Electronic Materials
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    • 제3권1호
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    • pp.4-8
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    • 2002
  • The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

DLC Emitter 전기적 특성 (Electric properties of DLC Emitter)

  • 이상헌
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1312_1313
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    • 2009
  • In this study the fabrication technique of the planner field emission device structure with a DLC layer were studied. The bottom Mo electrode using electrochemical method on the DLC layer deposited using assist sputtering.

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A prototype active-matrix field emission display with poly-Si field emitter arrarys and thin-film transistors

  • Song, Yoon-Ho;Lee, Jin-Ho;Kang, Seung-Youl;Park, Sng-Yool;Suh, Kyung-Soo;Park, Mun-Yang;Cho, Kyoung-Ik
    • Journal of Korean Vacuum Science & Technology
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    • 제3권1호
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    • pp.33-37
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    • 1999
  • We present, for the first time, a prototype active-matrix field emission display (AMFED) with 25$\times$25 pixels in which polycrystalline silicon fie이 emitter array (poly-Si FEA) and thin-film transistor (TFT) were monolityically intergrated on an insulating substrate. The FEAs showed relatively large electron emissions above at a gate voltage of 50 V, and the TFTs were designed to have low off-stage currents even though at high drain voltages. The intergrated poly-Si TFT controlled electron emissions of the poly-Si FEA actively, resulting in improvement in the emission stability and reliability along with a low-voltage control of field emission below 25V. With the prototype AMFED we have displayed character patterns by low-boltage pertipheral circuits of 15 V in a high vacuum chamber.

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전계방출표시소자에서 나노 카본의 응용 (Application of Nano-carbons in Field Emission Display)

  • 김광복;송윤호;황치선;정한기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.76-79
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    • 2003
  • The characteristic of single wall carbon nanotube (SW-CNT) and herringbone nano fiber (HB-CNF) emitters was described. SW-CNT synthesized by arc discharge and HB-CNF prepared by thermal CVD were mixed with binders and conductive materials, and then were formed by screen-printing process. In order to obtain efficient field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNT and CNF emitters. The basic structure of FED was of a diode type through fully vacuum packaging. Also, we proposed a new triode type of field emitter using a mesh gate plate having tapered holes and could achieve the ideal triode properties with no gate leakage currents.

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CNT-BASED FIELD EMISSION X-RAY SOURCE

  • Kim, Hyun Suk;Lee, Choong Hun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.433-433
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    • 2016
  • Carbon nanotubes (CNT) emitter has widely become an attractive mechanism that draws growing interests for cold cathode field emission. CNT yarns have demonstrated its potential as excellent field emitters. It was demonstrated that a small focal spot size was achieved by manipulating some electrical parameters, such as applied bias voltage at the mesh gate, and electrostatic focal lenses, geometrical parameters, such as axial distances of the anode, and the electrostatic focal lens from the cathode assembly, and the dimension of the opening of the electrostatic lens. Electrical-optics software was used to systematically investigate the behavior of the electron beam trajectory when the aforementioned variables were manipulated. The results of the experiment agree with the theoretical simulation results. Each variable has an individual effect on the electron beam focal spot size impinging on the target anode. An optimum condition of the parameters was obtained producing good quality of X-ray images. Also, MWCNT yarn was investigated for field emission characteristics and its contribution in the X-ray generation. The dry spinning method was used to fabricate MWCNT yarn from super MWCNTs, which was fabricated by MW-PECVD. The MWCNT yarn has a significant field emission capability in both diode and the triode X-ray generation structure compared to a MWCNT. The low-voltage-field emission of the MWCNT yarn can be attributed to the field enhancing effect of the yarn due to its shape and the contribution of the high-aspect-ratio nanotubes that protrude from the sides of the yarn. Observations of the use of filters on the development of X-ray images were also demonstrated. The amount of exposure time of the samples to the X-ray was also manipulated. The MWCNT yarn can be a good candidate for use in the low voltage field emission application of X-ray imaging.

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Electron Field Emission for a Cylindrical Emitter of Single Carbon Nanotube

  • Lee, Youn-Ju;Kim, Chang-Duk;Lee, Hyeong-Rag
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.764-767
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    • 2007
  • We investigated the field emission of single carbon nanotube including the anode effect by calculating the tunneling probability of an electron. The experimental results from this study were in agreement with our theoretical calculations. The constant enhancement factor was calculated using an approximation of the potential barrier.

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One-step liquid-phase fabrication of adhesive and protective inorganic layer for carbon nanotube field emitters

  • Jeong, Hae-Deuk;Kim, Ho-Young;Jeong, Hee-Jin;Jeong, Seung-Yol;Han, Joong-Tark;Lee, Geon-Woong
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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    • pp.43-43
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    • 2010
  • we have investigated the field emission characteristics of the CNT/TEOS hybrid thin films fabricated by a spray method. It is found that the CNT/TEOS hybrid emitters show high current density, low turn on field, and long-term emission stability compared to the CNT emitters. These efficient field emission characteristics of the CNT/TEOS hybrid emitters are attributed to the TEOS sol, acting as a protection layer of nanotube emitter by surrounding the nanotube tip as well as a binder material to enhance the adhesion of nanotube emitters to the substrate. Therefore, the CNT/TEOS hybrid emitters could be utilized as an alternative for the efficient and reliable field emitters.

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자체적으로 진공을 갖는 수평형 전계 방출 트라이오드 (A novel in-situ vacuu encapsulted lateral field emitter triode)

  • 임무섭;박철민;한민구;최연익
    • 전자공학회논문지A
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    • 제33A권12호
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    • pp.65-71
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    • 1996
  • A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V$_{AC}$ = 30V, and high transconductance (g$_{m}$) of 1.7$\mu$S at V$_{AC}$ = 22V. The superb device characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.

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