• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2007.05a
• /
• pp.3-6
• /
• 2007

The Light brightness is to enhance the luminescence efficiency of phosphor including conductive material. In preparing the anode layer, phosphors mixed with conductive material prepared with pastes of polymer resin using by screen printing method. When the prepared anode layer bombarded by cold electron from emitter of cathode, it give rise to form the secondary electron from those of conductive materials such as ITO powder. Furthermore, we are expect to enhance the luminescence efficiency more than without conductive material.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.137-140
• /
• 2006

The prototype of the field emission display with carbon nanotube emitter is developed in this study. To improve the brightness and color gamut of the prototype, new phosphor material, $SrGa_2S_4:Eu$, is adopted instead of conventional CRT-green phosphor. By replacing the green phosphor, the prototype shows significant improvements in the brightness and color gamut. At the anode voltage of 7 kV and the anode current of $2{\sim}3\;{\mu}A/cm^2$ the brightness is higher than $600\;cd/m^2$. The luminous efficiency of the prototype is about 7.7 lm/Watt.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1008-1011
• /
• 2005

In this study, the field emission display with carbon nanotube emitter is developed for the large size HDTV application. Two structures for electron beam focusing are developed on the typical top-gate cathode. The metal grid and focusing gate structure are proved to be effective for the focusing. The data switching voltage for the double gate structure is lower than 30V which is competitive value in respect of the cost for driver electronics. The brightness and color gamut are comparable to those of the commercial product such as CRT.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1470-1473
• /
• 2005

We proposed new triode-type Field Emitter Arays using Carbon NanoTubes(CNT-FEAs) as electron emission sources at low electric fields. The CNTs were selectively grown on the patterned catalyst layer by Plasma-Enhanced Chemical Vapor Deposition (PECVD). In this structure, gate electrodes are located underneath the cathode electrodes and extracted gate is surrounded by CNT emitters. Furthermore, in order to control density of CNTs, we investigated effect of using rapid thermal annealing (RTA).

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.9
• /
• pp.662-664
• /
• 1999

We fabricated AC-TFEL device having cone-shaped Si micro-tip reflector array based on the process which have been conventionally employed for the Si-tip field emitter array in FED system. As a result, the AC-TFEL device having a new geometrical structure could generate well concentrated visible white-light from 3600 reflectors/pixel under bipolar pulse excitation mode only by edge-emission mechanism.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.1
• /
• pp.95-97
• /
• 1999

A 3.12" FED panel was packaged successfully using the anode plate on which phosphors and black matrix were coated and cathode plate containing emitter arrays. The vacuum level of the panel was investigated during panel evacuation, tip-off and getter activation process. The packaged panel exhibited vacuum level below 2${\times}$10-6 Torr. Similar experiments were carried out for 10" panel made of bare plates. In addition, the vacuum level of two panels was compared continuously after tip off process; one with the getter and the other without it.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.21 no.10
• /
• pp.1184-1193
• /
• 2010

The upper frequency of international EMC regulations is being expanded above 1 GHz. Radiated emissions above 1 GHz are different from those below 1 GHz that is existing upper regulation frequency, and which have lower field strength and sharper and tilted beam-width, relatively. In this paper, an effective evaluation method to be used above 1 GHz is studied using an offset parabola antenna system having a double-ridged horn antenna as a feed. First, simple model is proposed for calculating antenna factor and field uniformity of the parabola antenna system, and then real radiated emission and radiated susceptibility measurements are performed using a constant noise emitter and the suggested antenna system. The results show that the proposed antenna system has higher gain and power efficiency, and wider field uniformity relative to a conventional double-ridged horn antenna. Therefore, it is confirmed that the proposed system can be effectively used for EMC measurements above 1 GHz.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.490.2-490.2
• /
• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1137-1139
• /
• 1995

$SiN_x$ films deposited on bare Si and wet-etched Si by RPCVD were fabricated to investigated the effect of wet-etched surface of Si on the characteristics of the interface between $SiN_x$ and Si. FT-IR spectra on each film showed similar characteristics. However, it was confirmed that the electric characteristics(I-V, C-V) of the interface between $SiN_x$ and Si have been degraded by the wet etching process of Si, which is applied for the formation of Si field emitter array. Therefore, we suggest that the stacked structure of insulating layer with good interface characteristics is desirable for FED application.

• Journal of the Korean Vacuum Society
• /
• v.18 no.2
• /
• pp.79-84
• /
• 2009

The electron emission source of triode type has been fabricated using CNT paste. The nano Ag particle and photosensitive polymers were added to the CNT paste. The surface roughness of the CNT emitter was uniform by the back exposure method. The added nano Ag particle improves the adhesion and the electric conductance with small variation in the CNTs and between electrode. After the aging with heat-exhausting, the reliability of the triode CNT electron source was secured in the high voltage and current operation for 12 hours. At this time, the gate leakage current was about 10 % less than.