• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.111-116
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• 2001

Poly-Si TFT's(Polysilicon thin filmtransistors) have been actively studied due to their applications in active matrix liquid crystal displays and active pull-up devices of CMOS SRAM's. For such applications, the leakage current has to be in the range of sub-picoampere. However, poly-Si TFT's suffer from anomalous high leakage currents, which is attributed to the emission of the traps present at gain boundaries in the drain junction. The leakage current has been analyzed by the field emission via grain-boundary traps and thermionic field emission over potential barrier located at the grain boundary. We found that the models proposed before are not consistent with the experimental results at far as drain-offset poly-Si TFT's we fabricated concern. In this paper, leakage current of drain-offset poly-Si TFT's with different offset lengths was studied. A conduction model based on the thermionic emission of the tunneling electrons is developed to identify the leakage mechanism. It was found that the effective grain size of the drain-offset region is important factor in the leakage current. A good agreement between experimental and simulated results of the leakage current is obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1466-1469
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• 2005

We report effects of electrical aging on the emission stability of carbon nanotube (CNT) paste for low cost and high low-cost and large area field emission devices or displays. Photosensitive carbon nanotube paste was formulated by using of spin on glass (SOG) as an inorganic binder and investigated emission properties and stability depending on electrical aging condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.538-541
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• 2002

탄소나노튜브 (CNT)가 도포된 평면형 에미터와 원형 개구의 게이트 전극을 가지는 삼전극 전계방출 소자의 전계방출 특성을 시뮬레이션하였다. 체계적인 시뮬레이션을 위해 소자 내 전위의 공간적 분포 특정을 결정하는 전계형상인자 $\gamma$를 정의하고 이 값에 따른 전위분포의 특성과 방출 전자의 궤적을 계산하였다. 계산 결과$\gamma$ > 1 인 전압조건에서는 에미터의 가운데를 중심으로 강한 전자방출이 발생하고 전자빔이 구조의 축 방향으로 자체 집속됨을 알 수 있었다. 이렇게 되면 에미터와 게이트의 정렬이 전혀 필요하지 않게 되며 또한 별도의 전자집속회로 없이도 에미터와 양극에 있는 형광체가 1:1 로 대응하는 획기적인 디스플레이 구조를 가능하게 해 준다 적정 전압조건에서 CNT의 전계강화인자 $\beta$의 변화에 따른 총 전류를 계산한 결과，$\beta$ >3000인 CNT를 사용할 경우 실제 소자로서 구현이 가능함을 확인하였다.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.4
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• pp.93-96
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• 2000

Microchannel plates (MCPs) have been developed by introducing new materials and process technologies. Main body was made of alumina by programmable punching, laminating, and firing. The channel walls of pore arrays of an MCP were deposited with thin films by electroless copper plating and sol-gel process. Our MCP has advantages such as easy fabrication, durability, high temperature endurance, and applicability to the large size comparing with the conventional MCPs. Experiments on the brightness of an MCP incorporated FED revealed that the FED with a MCP is three to four times brighter than a conventional FED. Moreover, the focusing in a FED is improved. Incorporating an MCP into a FED is one of promising methods to enhance the characteristics of the FED. In addition, amplification yield of the MCP is measured for varying the aspect ratio and the input current.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1529-1531
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• 2008

Since the discovery over a decade ago, carbon nanotubes (CNTs) have been attracting considerable attentions both from scientists and engineers. Because of the excellent field emission properties, such as high aspect ratio, extremely small diameter, and high emission current, CNTs become a potential candidate as field emitter for field emission display (FED) and lighting (FEL) as backlight for LCD. Due to the exceptional physical properties, such as superior thermal and electrical conductivities, as well as high stiffness and strength, the CNT-based composites can be as light-weight heat-sink or thermal spreader materials used for power electronic devices, such as power LED for general illumination. The CNTs for above applications will be reviewed, and related materials and devices will be demonstrated in this paper.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.37-43
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• 2006

Carbon nanotube cathodes (CNT cathodes) were fabricated by a screen printing method using multi-walled carbon nanotubes. The effects of surface treatment on CNT cathodes were investigated for use in high efficiency field emission displays. The optimum surface treatment for a CNT cathode is dependent on a relative bonding force of CNT films on the cathode after a heat treatment. Because of the high bonding force used in the Liquid method, this method is recommended for CNT cathodes which are heat-treated at $390^{\circ}C$ in a $N_2$ atmosphere. The Rolling method is applicable for CNT cathodes fabricated at $350^{\circ}C$ in an atmosphere of air. The results of this study provide basic criteria for the selection of an appropriate surface treatment for large area CNT cathodes.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.541-546
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• 2006

In this study we have investigated cathodoluminescence (CL) and structural properties of thin film $ZnGa_2O_4:Mn$ oxide phosphor by using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), and cathodoluminescence. PL emission peaked at 506 nm was observed from the $ZnGa_2O_4:Mn$ phosphor target and it was attributed to the $^4T_1-^6A_1$ transition in $Mn^{2+}$ ion. The color coordinates of the emission were x = 0.09 and y = 0.67. The $ZnGa_2O_4:Mn$ films showed the excitation spectrum peaked at 294 nm by $Mn^{2+}$ ion absorption. It was found that the higher intensity of CL emission at 505 nm appears to result from the denser and closely-packed structure in $ZnGa_2O_4:Mn$ phosphor films deposited at lower pressures. The CL intensity did not show any systematic dependence on film surface roughness.

• Journal of Information Display
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• v.6 no.2
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• pp.19-24
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• 2005

The density controlled carbon nanotubes (CNTs) are grown on the iron acetate nanoparticles by using the freeze-dry method. The iron-acetate [Fe(II)$(CH_3COO)_2$] solution is used to prepare the catalytic iron nanoparticles. The density of CNTs is controlled in order to enhance the field emission process. Furthermore, the patterning of the iron nanoparticle catalyst-layer for the fabrication of electronic devices is simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to form the electron emitter with under-gate type triode structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.49-50
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• 2000

5.2" microtip field emission displays (FEDs) with high voltage applications are fabricated. Nano-structural analysis on microtips is performed for the reliable operation of FEDs. Chemical compositions on the apex of microtips are fully analyzed. A charging mechanism on spacers is simulated and experimentally confirmed with micro-images. A gas-aging mechanism is also studied with integration step of FEDs. The brightness of more than 300 $cd/m^2$ is achieved. In addition, as a new concept, 9" color carbon nanotube FEDs (CNT-FEDs) are introduced using well-aligned carbon nanotubes on glass substrates by paste squeeze and surface treatment techniques. A number of carbon nanotubes, $5-10/{\mu}m2$, are uniformly distributed over a large area. The turn-on fields of 1 $V/{\mu}m$ and field emission currents of 1.5 mA at 3 $V/{\mu}m$ are acquired. Different mechanisms between microtip FEDs and CNT-FEDs are discussed.