Search | Korea Science

Kim, Eung-Soo;Chae, Jung-Hoon
- Journal of the Korean Ceramic Society
- /
- v.42 no.11 s.282
- /
- pp.763-769
- /
- 2005
Ferroelectric $ReMnO_3$(Re:Ho, Er) thin films were deposited on Si(100) substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). Crystallinity and electric properties of $ReMnO_3$(Re:Ho, Er) thin films were investigated as a function of thermal heat treatment process, CHP (Conventional Heat-treatment Process) and RTP (Rapid Thermal Process). $ReMnO_3$(Re:Ho, Er) thin films prepared by RTP showed higher c-axis preferred orientation and homogeneous surface roughness than those prepared by CHP. The remnant polarization of ferroelectric hysteresis loop of $ReMnO_3$(Re:Ho, Er) thin films was strongly dependent on the caxis preferred orientation of hexagonal single phase, and the leakage current characteristics of thin films were dependent on the homogeneity of grain size as well as surface roughness of thin films.
https://doi.org/10.4191/KCERS.2005.42.11.763 인용 PDF KSCI

Ko, Pil-Ju;Lee, Woo-Sun
- Proceedings of the KIEE Conference
- /
- 2006.10a
- /
- pp.105-106
- /
- 2006
The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The scanning electron microscopy (SEM) analysis was performed to compare the morphology surface characteristics of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ capacitors. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics.
PDF