• 한국재료학회지
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• 제29권9호
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• pp.547-552
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• 2019

In the present study, the thermal conductivity of a silicon nitride($Si_3N_4$) thin-film is evaluated using the dual-wavelength pump-probe technique. A 100-nm thick $Si_3N_4$ film is deposited on a silicon (100) wafer using the radio frequency plasma enhanced chemical vapor deposition technique and film structural characteristics are observed using the X-ray reflectivity technique. The film's thermal conductivity is measured using a pump-probe setup powered by a femtosecond laser system of which pump-beam wavelength is frequency-doubled using a beta barium borate crystal. A multilayer transient heat conduction equation is numerically solved to quantify the film property. A finite difference method based on the Crank-Nicolson scheme is employed for the computation so that the experimental data can be curve-fitted. Results show that the thermal conductivity value of the film is lower than that of its bulk status by an order of magnitude. This investigation offers an effective way to evaluate thermophysical properties of nanoscale ceramic and dielectric materials with high temporal and spatial resolutions.

• Bulletin of the Korean Chemical Society
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• 제25권12호
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• pp.1829-1832
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• 2004

We have developed a new femtosecond probe technique by using stimulated Raman spectroscopy. The cross phase modulation in femtosecond time scale associated with off-resonant interaction was shown to be eliminated by integrating the transient gain/loss signal over the time delay between the Raman pump pulse and the continuum pulse. The stimulated Raman gain of neat cyclohexane was obtained to demonstrate the feasibility of the technique. Spectral and temporal widths of stimulated Raman spectra were controlled by using a narrow band pass filter. Femtosecond stimulated Raman spectroscopy was proposed as a highly useful probe in time-resolved vibrational spectroscopy.

• Journal of the Optical Society of Korea
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• 제1권2호
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• pp.100-103
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• 1997

We perform degenerate and nondegenerate pump-probe experiments on bulk GaAs at 100 K below the band gap. We mostly observe a negative differential transmission signal both in the degenerate and nondegenerate experiments. We interpret our signal as due to two-photon absorption. This negative signal has a different origin from the normally considered band gap renormalization for resonant excitations.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.703-704
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• 2014

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 동계학술발표회 논문집
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• pp.104-105
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• 2007

• Bulletin of the Korean Chemical Society
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• 제24권8호
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• pp.1075-1080
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• 2003

We have investigated femtosecond coherent vibrational motions of Zn(II)-5,15-diphenylporphyrin in toluene using chirp-controlled ultrashort pulses. The oscillatory features superimposed on the temporal profiles of the pump-probe transient absorption signal are affected by the chirping and energy of excitation pulses. Using chirp- and excitation energy-controlled femtosecond pulses, we are able to obtain information on the structural changes between the electronic ground and excited states based on a comparative analysis of the Fouriertransformed frequency-domain spectra retrieved from the oscillatory components with the ground state resonance Raman spectra and normal mode calculations.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권6호
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• pp.286-292
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• 2005

Terahertz wave is a kind of electromagnetic radiation whose frequency lies in 0.1THz $\~$10THz range. In this paper, generation and detection characteristics of terahertz (THz) radiation by photoconductive antenna (PCA) method has been described. Using modern integrated circuit techniques, micron-sized dipole antenna has been fabricated on a low-temperature grown GaAs (LT-GaAs) wafer. A mode-locked Ti:Sapphire femtosecond laser beam is guided and focused onto photoconductive antennas (emitter and detector) to generate and measure THz pulses. Ultra-wide band THz radiation with frequencies between 0.1 THz and 3 THz was observed. Terahertz field amplitude variation with antenna bias voltage, pump laser power, pump laser wavelength and probe laser power was investigated. As a primary application example. a live clover leaf was imaged with the terahertz radiation.

• Journal of Photoscience
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• 제4권1호
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• pp.11-16
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• 1997

We measured, using femtosecond pump-probe experiment, the time evolution of transient absorption in aqueous CdS colloids. The signal rises within the time resolution (= 0.5 ps) of the experiment and decays with two exponential time constants, 4.8 ps and 132 ps. The ultrafast rise of the transient absorption is considered to be for shallowly trapped conduction band electrons after photoexcitation. The amplitude ratio of the two decaying components varies with the pump intensity and the decay times increase in the presence of hole scavengers. Even though a biexponential function fits the decay well, we object hat two independent first order processes (geminate and nongeminate recombinations) are responsible for the decay. A function with an integrated rate equation for second order nongeminate recombination plus a long background fits the decay well. The long background is considered to be for deeply trapped charges at the CdS particle.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.54-55
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• 2001

Recently, there has been much interests in InGaN/GaN multiple-quantum-well (MQW) structures due to their applicability as optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes [1]. Their ultrafast and physical properties are also of significant interests. Anomalously large acoustic phonon oscillations have been observed using ultrafast lasers in InGaN MQWs [2]. In this study, we have peformed femtosecond pump-probe experiments in the reflection geometry on 5 periods InGaN/GaN MQW LED structure with well width of 20$\AA$ and barrier width of 100$\AA$ at room temperature. (omitted)

• 한국레이저가공학회지
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• 제14권4호
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• pp.21-27
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• 2011

In this work, we have studied on time-resolved transient reflective image of single crystalline Si surface after single-shot fs-laser irradiation with varying the laser fluence under two different laser spot sizes. The temporal profiles of transient reflectivity changes as well as its maximum values at the early delay time were found to be strongly dependent on both the laser beam spot size and laser fluence. We have interpreted the dependence of transient reflectivity changes on the laser spot size in terms of a relaxation of the generated free carriers to the bulk silicon, which should be interacted with the plasma.