• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.415-420
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• 2007

Generally, a diode package consists of the synthetic resin that has good durability but low thermal conductivity. The surface mounted type fast recovery diode was fabricated by using ceramic package. Its main manufacture processes are composed of soldering, sillicon coating and side termination. And it has various advantages that diode is small, easy manufacture and fast cooling. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5.28 ns, 1322 V, 1.08 V, $0.45\;{\mu}A$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.221-221
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• 2006

The SMD type P-N junction diode with ceramic package for diode case were fabricated. It was made this diode with simple process from $Al_2O_3$ ceramic chip, solder preform, diode chip, coating reagent and conductive paste for chip terrmination. Its merit is small size, easy manufacture. fast cooling with ceramic case. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5 28ns, 1322V, 1.08V, $0.45{\mu}A$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.313-315
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• 1994

In this paper, it is consider spike voltage that is generated by ignoring the recovery time of switching device, turn on and turn off time. In the same principle, this spike voltage will be applicable to diode recovery time. The spike voltage causes to break down insulation of input transformer. So, we will show how to remove spike voltage by optimizing value of R and C and using switching diode which have fast recovery time.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.815-817
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• 1993

In this paper, it is considered spike voltage that is generated by ignoring the recovery time of switching device, turn on and turn off time. In the same principle, this spike voltage will be applicable to diode recovery time. The spike voltage causes to break down insulation of input transformer. So, we will show how to remove spike voltage by optimizing value of R and C and using switching diode which have fast recovery time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1308-1313
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• 2004

Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

• Journal of Power Electronics
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• v.9 no.3
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• pp.464-471
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• 2009

This paper introduces a new Motion-$SPM^{TM}$ (Smart Power Modules) module in Single In-line Package (SIP), which is a fully optimized intelligent integrated IGBT inverter module for up to 1kW low power motor drive applications. This module offers a sophisticated, integrated solution and tremendous design flexibility. It also takes advantage of pliability for the arrangement of heat-sink due to two types of lead forms. It comes to be realized by employing non-punch-through (NPT) IGBT with a fast recovery diode and highly integrated building block, which features built-in HVICs and a gate driver that offers more simplicity and compactness leading to reduced costs and high reliability of the entire system. This module also provides technical advantages such as the optimized cost effective thermal performances through IMS (Insulated Metal Substrate), the high latch immunity. This paper provides an overall description of the Motion-$SPM^{TM}$ in SIP as well as actual application issues such as electrical characteristics, thermal performance, circuit configurations and power ratings.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.493-496
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• 1999

A new soft switching single stage AC-DC full bridge boost converter with unit input power factor and isolated output is presented in this paper. Due to the use of a non-dissipative snubber on the primary side, a single stage high-power factor isolated full bridge boost converter has a significant reduction of switching losses in the main switching devices. The non-dissipative snubber adopted in this study consists of a snubber capacitor Cr, a snubber inductor Lr, a fast recovery snubber diode Dr, and a commutation diode Dr, and a commutation diode Dp. This paper presents the complete operating principles, theoretical analysis and experimental results.

• Proceedings of the KIPE Conference
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• 1997.07a
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• pp.251-255
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• 1997

The conventional high frequency phase-shifted full bridge dc/dc converter has a disadvantage that a circulating current flows through transformer and switching devices during the freewheeling interval. Due to this circulating current, RMS current stress, conduction losses of transformer and switching devices are increased. To alleviate this problem, this paper provides a circulating current free type high frequency soft switching phase-shifted full bridge (FB) dc/dc converter with energy recovery snubber (ERS) attached at the secondary side of transformer. The energy recovery snubber (ERS) adopted in this study is consisted of three fast recovery diode(Ds1, DS2, Ds3), two resonant capacitor (Cs1, Cs2)

• Proceedings of the KIEE Conference
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• 1997.07f
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• pp.1989-1992
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• 1997

A new soft switching single stage AC-DC full bridge boost converter with unit input power factor and isolated output is presented. Due to using of the non-dissipative snubber in the primary side, a single stage high-power factor isolated full bridge boost converter has a significant reduction of switching losses in main switching devices and output rectifiers of the primary and secondary side, respectively. The non-dissipative snubber adopted in this study is consisted of a snubber capacitor C. and a snubber inductor $L_r$, a fast recovery snubber diode $D_r$, a commutation diode $D_p$. This paper presents the complete operating principles, theoretical analysis and simulation results.