• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.148-149
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• 2001

순광학적 스위치와 logic gate는 초고속 networks와 컴퓨터를 위한 차세대의 기술로 부각되고 있다. 현재 사용되고 있는 전자적인 switching, routing, 신호 처리들은 대용량 고속화에 그 한계를 나타내고 있다. 미래에 요구되는 초고속 광 네트워크의 계획은 광학 스위치와 광 변조장치가 필요하다는 것을 지적하고있다 최근에 전자나 광전자적으로 가능한 것 이상으로 미래에 요구되는 Tera bits/sec에 접근할 수 있는 고속 연산과 신호처리가 가능한 스위칭에 관한 연구가 활발이 진행되고 있다. (중략)

• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.414-420
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• 2002

We realized optical logic gates using a bacteriorhodopsin (bR) doped polymer film. The bR undergoes a complex photocycle characterized by several spectroscopically distinct intermediate states. We realized optical logic gates using a He-Ne laser (632.8 nm) and a He-Cd laser (413 nm) that consider B-state and absorption change of M-state in the photocycle of bR. Also, we realized high speed AND logic gate using He-Ne laser (632.8 nm) and the second harmonics at 532 nm from a pulsed Nd-YAG laser that considering absorption spectrum between B-state and K-state.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.34 no.1
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• pp.11-19
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• 2024

The increased utilization of the FFT in signal processing, cryptography, and various other fields has highlighted the importance of optimization. In this paper, we propose the implementation of an accelerator that processes the radix-2 16 points FFT algorithm more rapidly and efficiently than FFT implementation of existing studies, using FPGA(Field Programmable Gate Array) hardware. Leveraging the hardware advantages of FPGA, such as parallel processing and pipelining, we design and implement the FFT logic in the PL (Programmable Logic) part using the Verilog language. We implement the FFT using only the Zynq processor in the PS (Processing System) part, and compare the computation times of the implementation in the PL and PS part. Additionally, we demonstrate the efficiency of our implementation in terms of computation time and resource usage, in comparison with related works.

• The Transactions of the Korea Information Processing Society
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• v.4 no.1
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• pp.311-323
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• 1997

This paper presents a fast fault simulation system for detecting stuck-at faults in mixed-level combinational logic circuits with gale level and switch -level primitives. For a practical fault simulator, the types are not restricted to static switch-level and/or gate-level circuits, but include dynamic switch-level circuits. To efficiently handle the multiple signal contention problems at wired logic elements, we propose a six-valued logic system and its logic calculus which are used together with signal strength information. As a basic algorithm for the fault simulation process, a well -known gate-level parallel pattern single fault propagation(PPSFP) technique is extended to switch-level circuits in order to handle pass-transistor circuits and precharged logic circuits as well as static CMOS circuits. Finally, we demonstrate the efficiency of our system through the experimental results for switch-level ISCAS85 benchmark combinational circuits and various industrial mixed-level circuits.

• Smart Structures and Systems
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• v.14 no.6
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• pp.1131-1150
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• 2014

One of the issues in extending the range of applicable problems of real-time hybrid simulation is the computation speed of the simulator when large-scale computational models with a large number of DOF are used. In this study, functionality of real-time dynamic simulation of MDOF systems is achieved by creating a logic circuit that performs the step-by-step numerical time integration of the equations of motion of the system. The designed logic circuit can be implemented to an FPGA-based system; FPGA (Field Programmable Gate Array) allows large-scale parallel computing by implementing a number of arithmetic operators within the device. The operator splitting method is used as the numerical time integration scheme. The logic circuit consists of blocks of circuits that perform numerical arithmetic operations that appear in the integration scheme, including addition and multiplication of floating-point numbers, registers to store the intermediate data, and data busses connecting these elements to transmit various information including the floating-point numerical data among them. Case study on several types of linear and nonlinear MDOF system models shows that use of resource sharing in logic synthesis is crucial for effective application of FPGA to real-time dynamic simulation of structural response with time step interval of 1 ms.

• Proceedings of the KIEE Conference
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• 2000.11d
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• pp.781-783
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• 2000

1bit full adder have 3 input (including carry_in) and 2 outputs(Sum and Carry_out). Because of 1 bit full adder's propagation delay. We usually use 4-bit binary full adder with fast carry, 74LS283. The 74LS283 is positive logic circuit chip. But the logic function of binary adder is symmetrical, so it can be possible to use it not only positive logic but also the negative logic. This thesis use symmetrical property. such as $C_{i+1}(\bar{a_i}\bar{b_i}\bar{c_i})=C_{i+1}{\bar}(a_i,\;b_i,\;c_i)$ and $S_i(\bar{a_i}\bar{b_i}\bar{c_i})=\bar{S_i}(a_i,\;b_i,\;c_i)$. And prove this property with logic operation. Using these property, the 74LS283 adder is possile as the negation logic circuit. It's very useful to use the chip in negative logic. because many system chip is negative logic circuit. for example when we have negative logic chip with 74LS283. we don't need any not gate for 74LS283 input, and just use output of adder(74LS283) as the negation of original output.

• ETRI Journal
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• v.43 no.4
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• pp.728-745
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• 2021

Carbon nanotube field-effect transistors (CNTFETs) have been widely studied as a promising technology to be included in post-complementary metal-oxide-semiconductor integrated circuits. Despite significant advantages in terms of delay and power dissipation, the fabrication process for CNTFETs is plagued by fault occurrences. Therefore, developing a fast and accurate method for estimating the reliability of CNTFET-based digital circuits was the main goal of this study. In the proposed method, effects related to faults that occur in a gate's transistors are first represented as a probability transfer matrix. Next, the target circuit's graph is traversed in topological order and the reliabilities of the circuit's gates are computed. The accuracy of this method (less than 3% reliability estimation error) was verified through various simulations on the ISCAS 85 benchmark circuits. The proposed method outperforms previous methods in terms of both accuracy and computational complexity.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.604-607
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• 2008

In this study, p-channel silicon-oxide-nitride-oxide-silicon (SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are $20{\AA}$ for the tunnel oxide, $14{\AA}$ for the nitride layer, and $49{\AA}$ for the blocking oxide. The fabricated SONGS transistors show low programming voltage, fast erase speed, and relatively good retention and endurance.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.5B no.3
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• pp.277-282
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• 2005

This paper describes a step-down AC voltage regulator using an AC chopper and auxiliary transformer, which is a series connected to the main input. The detail design of the AC regulator, logic and PWM pattern of the AC chopper is described and the three-phase AC regulator using two single­phase AC choppers with a three transformer configuration is proposed for three-phase application. The proposed three-phase system has the advantages of lower system cost due to reduced switch number and gate driver circuit as well as advantages of decreased size and weight because it uses a series compensated scheme. The proposed AC regulator has many benefits such as fast voltage control, high efficiency and simple control logic. Experimental results indicate that it can be used as a step-down AC voltage regulator for power saving purposes very efficiently.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.7-11
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• 2009

In this study, p-channel silicon-oxide-nitride-oxide-silicon(SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are 2.0 nm for the tunnel oxide, 1.4 nm for the nitride layer, and 4.9 nm for the blocking oxide. The fabricated SONOS transistors show low programming voltage and fast erase speed. However, the retention and endurance of the devices show poor characteristics.