• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04a
• /
• pp.169-172
• /
• 2000

A-Si:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly-Si films were achieved by various anneal techniques ; isothermal, RTA, and excimer laser anneal. The TFT on as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from $200^{\circ}C$ to $1000^{\circ}C$. The TFT on poly-Si showed an improved $I_{on}/I_{off}$ ratio of $10^6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly-Si TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.7
• /
• pp.525-531
• /
• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.287.1-287.1
• /
• 2014

본 연구에서는 현재 디스플레이에서 가장 널리 이용되는 저온 polycrystalline silicon (poly-Si)의 결정화 방법에 따른 thin-film transistor (TFT)의 전기적 특성을 분석하였다. 분석에 이용된 결정화 방식은 Excimer Laser Annealing (ELA)와 Metal Induced Crystallization (MIC)이다. ELA와 MIC TFTs의 전기적 특성 측정을 통한 분석결과 ELA와 MIC poly-Si TFTs의 전기적 특성 [field-effect mobility (${\mu}_{FE}$), on/off current ratio ($I_{ON}/I_{OFF}$), sub-threshold swing (SS)]은 큰 차이는 없지만, ELA를 이용한 poly-Si TFT의 전기적 특성이 조금 우수하다. 하지만, MIC poly-Si TFT의 경우 threshold voltage ($V_{TH}$)가 0V에 보다 가까울 뿐만 아니라, 전기적 스트레스를 통한 신뢰성 확인 시 ELA poly-Si TFT보다 조금 더 안정적이다. 이는 ELA의 경우 좁은 면에 선형 레이저 빔으로 조사하면서 생기는 hill-lock의 영향으로 표면이 거칠고 균일하지 못하여 바이어스 인가시 생기는 문제이다. 또한 MIC는 금속 촉매를 이용해 결정립 경계를 확장하고 결정 크기를 키워 대면적화에 유리하다. Thermal Stress에서는 (from 293K to 373K) TFT에 점차 높은 온도를 가하자 MIC poly-Si TFT의 경우 off 상태에서 누설 전류 값이 증가하며 열에 민감한 반응을 보이는 것을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.785-789
• /
• 2005

Low temperature deposition of silicon and silicon nitride films by catalytic CVD technique was studied for application to thin film transistors on plastic substrates for flexible AMOLEDs. The substrate temperature initially held at room temperature, and was controlled successfully below $150^{\circ}C$ during the entire deposition process. Amorphous silicon films having good adhesion, good surface morphology and sufficiently low content of atomic hydrogen were obtained and could be successfully crystallized using excimer laser without a prior dehydrogenation step. $SiN_x$ films showed a good refractive index, a high deposition rate, a moderate breakdown field and a dielectric constant. The Cat-CVD silicon and silicon nitride films can be good candidates for fabricating thin films transistors on plastic substrates to drive active-matrix organic light emitting display.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.149-152
• /
• 2005

We present the characterization of poly-Si TFT fabricated below on Plastic Substrate below $170^{\circ}C$ on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than $290\;cm^2/Vsec$.

• Korean Journal of Optics and Photonics
• /
• v.4 no.4
• /
• pp.373-380
• /
• 1993

A five mirror system with a reduction magnification(M=+1/5) is designed for DUV optical lithography. Initially, numerical solutions of all zero 3rd order aberrations and zero 5th order spherical aberration are obtained for the spherical mirror system. Next, by the optimization method, the aspherization is carried out to the two spherical mirrors to obtain a system that has as less residual aberrations, higher NA and improved MTF as possible. We have finally obtained the system of which NA is 0.45 and the resolution is about 500 cycles/mm at the 50% MTF value criterion and the depth of focus of $1.0{\mu}m$ for the nearly incoherent illumination$({\sigma}=1.0)$ and the wavelength of 0.248 m(KrF excimer laser line).

• Journal of Powder Materials
• /
• v.9 no.4
• /
• pp.267-272
• /
• 2002

The production of micro components is one of the leading technologies in the fields of information and communiation, medical and biotechnology, and micro sensor and micro actuator system. Microfabrication (micromachining) techniques such as X-ray lithography, electroforming, micromolding and excimer laser ablation are used for the production of micro components out of silicon, polymer and a limited number of pure metals or binary alloys. However, since the first development of microfabrication technologies there have been demands for the cost-effective replication in large scale series as well as the extended range of available material. One such promising process is micro powder injection molding (PIM), which inherits the advantages of the conventional PIM technology, such as low production cost, shape complexity, applicability to many materials, applicability to many materials, and good tolerance. This paper reports on a fundamental investigation of the application of W-Cu powder to micro metal injection molding (MIM), especially in view of achieving a good filling and a safe removal of a micro mold conducted in the experiment. It is absolutely legitimate and meaningful, at the present state of the technique, to continue developing the micro MIM towards production processes for micro components.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1772-1775
• /
• 2000

We have fabricated poly-Si TFTs by two-step crystallizaton. Poly-Si films have been prepared by furnace annealing(FA) and rapid thermal annealing(RTA) followed by subsequent the post-annealing, excimer laser annealing. The measured crystallinity of RTA and FA annealed poly-Si film is 77% and 68.5%, respectively. For two-step annealed poly-Si film, the crystallinity has been drastically to 87.7% and 86.3%. The RMS surface roughness from AFM results have been improved from 56.3${\AA}$ to 33.5${\AA}$ after post annealing. The measured transfer characteristics of the two-step annealed poly-Si TFTs have been improved significantly for the both FA-ELA and RTA-ELA. Leakage currents of two-step annealed poly-Si TFTs are lower than that of the devices by FA and RTA. From these results, we can describe the fact that the intra-grain defects has been cured drastically by the post-annealing.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.1
• /
• pp.20-28
• /
• 2003

In this paper, we present results of the comparative analysis of the flicker phenomena in the poly-Si TFT-LCD and a-Si:H TFT-LCD arrays for the development and manufacturing of wide-area and high-quality TFT-LCD displays. We used four different types of TFTs; a-Si:H TFT, excimer laser annealed (ELA) poly-Si TFT, silicide mediated crystallization (SMC) poly-Si TFT, and counter-doped lateral body terminal (LBT), poly-Si TFT. We defined the electrical quantity of the flicker so that we could compare the flickers quantitatively for four different 40" UXGA TFT-LCDs. We identify three factors contributing to the flicker, such as charging time, kickback voltage and leakage current, and analyze how much each of three factors give rise to the flincker in the different TFT-LCD arrays. In addition, we suggest and show that, in the case of the poly-Si TFT-LCD arrays, the low-level (minimum) gate voltages should be carefully chosen to minimize the flicker because of their larger leakage currents compared with a-Si TFT-LCD arrays.

• Korean Journal of Optics and Photonics
• /
• v.4 no.1
• /
• pp.1-8
• /
• 1993

A design of four-mirror optical system with reduction magnification 5X for deep UV ($\lambda$=248 nm of KrF excimer laser) submicron lithography is presented. Initially by using the paraxial quantities, the domain of solution for $t=d_1+d_2+d_3$<0 (d;: distance between the mirror $c_i$ and $c_{i+1}$ is found for the system which is free from the four off-axial Seidel first order aberrations that are coma, astigmatism, field curvature, and distortion. The solution with $d_5$=2.95 (normalized with respect to $c_i$= -1) is choosen and the aspherization is carried out to the spherical mirror surfaces ($c_3$ and $c_4$ in order to reduce the axial and residual off-axial higher order aberrations. The numerical aperture of the final system is as large as 0.4, which gives Rayleigh resolution of 0.38 $\mu\textrm{m}$.