• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.901-907
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• 2000

As the minimum feature size for making ULSI approaches the wavelength of light source in optical lithography, the aerial image is so hardly distorted because of the optical proximity effect that the accurate mask image reconstruction on wafer surface is almost impossible. We applied the Optical Proximity Correction(OPC) on isolated patterns assuming Attenuated Phase Shift Mask(APSM) as well as binary mask, to correct the widening of isolated patterns. In this study, we found that applying OPC to APSM shows much better improvement not only in enhancing the resolution and fidelity of t도 images but also in enhancing the process margin than applying OPC to the binary mask. Also, we propose the OPC method of APSM for isolated patterns, the size of which is less than the wavelength of the ArF excimer laser. Finally, we predicted the resolution limit of optical lithography through the aerial image simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.91-92
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• 2007

이 논문에서는 다양한 채널길이에 따른 n-채널 다결정 실리콘 TFT의 특징을 보고한다. Excimer laser annealing (ELA)를 이용한 다결정 실리콘은 디스플레이의 재료로써 줄은 특성을 갖는다. 유리기판 위에 buffered oxide 층을 올리고 ELA 처리를 하여 다결정 실리콘을 제작 하였다. 그 위에 $SiO_2$, $SiN_x$를 증착시켜 n-채널 다결정 실리콘 TFT를 만들었다. 다양한 채널의 길이에 따른 n-채널 TFT의 문턱전압 ($V_{TH}$), ON/OFF 전류비($I_{ON}/I_{OFF}$), 포화 전륙(IDSAT)를 조사하였다. 그 결과 채널의 길이가 짧은 소자에서 더 줄은 TFT의 특징이 나타난다.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1379-1380
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• 2007

본 연구에서는 XeCl 엑시머 레이저를 통해서 GaN를 선별적으로 고농도 도핑 할 수 있는 새로운 방법을 제안했으며, 제안된 방법에 의해 제작된 소자는 낮은 ohmic contact 저항을 나타내었다. 증착된 실리콘 film에 XeCl 엑시머 레이저를 사용하여 GaN 위에 sputtering 함으로써 조사하였으며 레이저에 의해 조사된 영역에는 ohmic contact을 형성하였다. 기존 방법에 의한 ohmic contact 저항이 0.66 ohm-mm이었던 반면, 레이저 도핑 공정에 의한 ohmic contact 저항은 0.27 ohm-mm로 효과적으로 감소되었다. SIMS 분석을 통해 레이저 조사를 하는 동안 높은 에너지에 의해 실리콘이 GaN로 확산되었으며, ohmic contact 저항이 ohmic contact 영역 아래의 도핑 농도 증가로 인해 감소한 것을 확인했다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.429-429
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• 2010

TFT 제조 방법 중 LTPS (Low Temperature Polycrystalline Silicon)는 저온과 저비용 등의 이점으로 인하여 flat panel display 제작에 널리 사용된다. 이동도와 전류 점멸비 등에서 이점을 가지는 ELA(Excimer Laser Annealing)가 널리 사용되고 있지만, 이 방법은 uniformity 등의 문제점을 가지고 있다. 이를 극복하기 위한 방법으로 MICC(Metal Induced Capping Crystallization)이 사용되고 있다. 이 방법은 $SiN_x$, $SiO_2$, SiON등의 capping layer를 diffusion barrier로 위치시키고, Ni 등의 금속을 capping layer에 도핑 한 뒤, 다시 한번 열처리를 통하여 a-Si에 Ni을 확산시키킨다. a-Si 층에 도달한 Ni들이 seed로 작용하여 Grain size가 매우 큰 film을 제작할 수 있다. 채널의 grain size가 클 경우 grain boundary에 의한 캐리어 scattering을 줄일 수 있기 때문에 MIC 방법을 사용하였음에도 ELA에 버금가는 소자의 성능과 안정성을 얻을 수있었다. 본 연구에서는 large grain TFT의 Gate bias stress에 따른 소자의 안정성 측정 및 분석에 목표를 두었다.

• Journal of Photoscience
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• v.6 no.3
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• pp.109-115
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• 1999

Intense excimer laser irradiation of polymer films results in expansion and the following contraction , recovering ithe initial flat surface. The morphological dynamics is meausred directly by nanosecond time-resolved interferometry for polystyrene(PS), polyurethane, and polyimide films. The expansion proceeds with a speed of a few nm/ns , while the contraction depends upon the polymer ; very low contraction for PS, rapid 2 component shrinking for polyurethane, and rapid monotonous decay for polymide. These characteristic behavior are considered from viewpoints of interpenetrating structures of polymers, glass-rubber phase transitioni, thermal diffusion, and photothermal mechanism.

• Bulletin of the Korean Chemical Society
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• v.9 no.2
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• pp.84-87
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• 1988

The Photophysical and photochemical properties of Ruthenium bipyridine with two long hydrocarbon chains, $[Ru(bipy)_2(dhbipy)]^{2+}$ and transient phenothiazine derivative cation radical $(PTD^+)$ in the cationic vesicle were studied. Transient absorption spectra of cation radical of phenothiazine derivative in the vesicle system containing the $Ru^{2+}$ complex, $[Ru(bipy)_2(dhbipy)]^{2+}$, (1) as sensitizer and phenothiazine derivative as electron donor was observed by XeCl excimer laser photolysis system. Thus the excited ruthenium complex would be quenched by phenothiazine derivative(PTD) reductively in the vesicle system. The quenching rate constant($K_Q$) of $Ru^{2+}$ with two long hydrocarbon chains in the vesicle by PTD was $9.6{\times}10^8M^{-1}S^{-1}$. The absorption decay kinetics showed that lifetime of phenothiazine derivative cation radical is a value in the 4-8m sec range.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.101-104
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• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.1-1
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• 1991

The fabrication of computer components requires a great variety of optical equipment. The patterning of integrated circuits is performed either on step-and-repeat cameras, scanning systems or step-and-repeat systems. The image forming optics used in these machines is quite difficult to design and fabricate. In addtion several layers of patterns must be precisely superposed, and also the illuminators have to provide the final irradiance in the image plane constant to within 1%. Other uses of specialized optical equipment are mass production of chip packages, inspection scanners and laser ablation cameras for polymers. The details of some of these systems will be described with particular ephasis on different optical structures and the use of excimer lasers as light sources.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.363-363
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• 2006

Bonding of composite materials with an adhesive layer is one of the most promising alternatives to classical bonding techniques. The use of several surface treatments may greatly increase this adhesion behavior at the initial state. Then in order to see the influence of the thickness of polymer matrix on the adhesion of composite assembly, different surface treatment, which can reduce or increase this thickness, are used (peel ply, tear ply, excimer laser). The influence of this specific parameter is not only discussed at the initial state but also after thermal ageing of the whole bonded assembly. Results show that the best performances at the initial state are not obviously the best performances after ageing.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.159-162
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• 2002

This paper reviews an advanced excimer-laser crystallization technique enabling precise location-control of the individual grains. With the developed ${\mu}$-Czochralski (grain-filter) process, the large grains having a diameter of 6 ${\mu}m$ can be set precisely at predetermined positions. We will also discuss the performance of the single-crystalline Si TFTs that are formed within the location-controlled Si grains. The field-effect mobility for electrons is 430 $cm^2/Vs$ on average, which is well comparable to that of TFTs made with silicon-on-insulator wafers.